WO2024042814A1 - 電界効果トランジスタ - Google Patents

電界効果トランジスタ Download PDF

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Publication number
WO2024042814A1
WO2024042814A1 PCT/JP2023/021200 JP2023021200W WO2024042814A1 WO 2024042814 A1 WO2024042814 A1 WO 2024042814A1 JP 2023021200 W JP2023021200 W JP 2023021200W WO 2024042814 A1 WO2024042814 A1 WO 2024042814A1
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Prior art keywords
layer
insulating film
gate insulating
current diffusion
contact
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Ceased
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PCT/JP2023/021200
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English (en)
French (fr)
Japanese (ja)
Inventor
秀史 高谷
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Denso Corp
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Denso Corp
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Application filed by Denso Corp filed Critical Denso Corp
Priority to CN202380041413.1A priority Critical patent/CN119234316A/zh
Priority to EP23856932.1A priority patent/EP4579759A4/en
Priority to JP2024542598A priority patent/JP7772236B2/ja
Publication of WO2024042814A1 publication Critical patent/WO2024042814A1/ja
Priority to US18/955,087 priority patent/US20250089293A1/en
Anticipated expiration legal-status Critical
Priority to JP2025155188A priority patent/JP2025176181A/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Definitions

  • the technology disclosed in this specification relates to field effect transistors.
  • the field effect transistor disclosed in JP-A-2008-235546 has a trench-type gate electrode. Further, this field effect transistor has an n-type source layer, a p-type body layer, and a lower n-layer disposed below the body layer in a range in contact with the gate insulating film. When a predetermined potential is applied to the gate electrode, a channel is formed in the body layer, and the source layer and the lower n-layer are connected through the channel. This turns on the field effect transistor.
  • a current diffusion n-layer with a high n-type impurity concentration may be provided in a region adjacent to the body layer in the lower n-layer.
  • electrons flowing into the lower n-layer from the channel are laterally diffused within the current diffusion n-layer. Therefore, the current diffuses and flows more easily in the region below the current diffusion n layer of the lower n layer (so-called drift layer), and the on-resistance of the field effect transistor is reduced.
  • drift layer the region below the current diffusion n layer of the lower n layer
  • This specification proposes a technique for suppressing dielectric breakdown of a gate insulating film when a current diffusion n-layer is provided.
  • a field effect transistor disclosed in this specification includes a semiconductor substrate having a trench on an upper surface, a gate insulating film covering the inner surface of the trench, and a field effect transistor disposed within the trench and insulated from the semiconductor substrate by the gate insulating film. It has a gate electrode.
  • the semiconductor substrate includes an n-type source layer in contact with the gate insulating film, a p-type body layer in contact with the gate insulating film below the source layer, and a lower portion disposed below the body layer. It has n layers.
  • the lower n-layer includes a current diffusion n-layer that is in contact with the body layer from below, and an n-type impurity that is in contact with the current diffusion n-layer from below and has a lower level of n-type impurity than the current diffusion n-layer.
  • the n-type impurity concentration distribution in the current diffusion n layer in the depth direction of the semiconductor substrate is distributed so as to have a peak value.
  • the inner surface of the trench includes a side surface configured with a surface having a radius of curvature of 0.7 ⁇ m or more, and a concave curved surface connecting the side surface and the lower end of the trench and having a radius of curvature of less than 0.7 ⁇ m. It has a bottom connecting surface. A portion of the current diffusion n layer having the peak value is in contact with the gate insulating film on the side surface.
  • a high electric field is likely to be applied to the gate insulating film in the area covering the bottom connection surface. Therefore, if a highly concentrated n-layer is in contact with the gate insulating film covering the bottom connection surface, an excessively high electric field is likely to be applied to the gate insulating film in that range, resulting in dielectric breakdown of the gate insulating film. easy.
  • the portion of the current diffusion n layer having the peak value is in contact with the gate insulating film on the side surface of the trench.
  • the side surfaces of the trench are formed by relatively flat surfaces with a radius of curvature of 0.7 ⁇ m or more.
  • FIG. 2 is a cross-sectional perspective view of the MOSFET of Example 1.
  • FIG. 3 is an enlarged cross-sectional view of the upper part of the MOSFET of Example 1.
  • FIG. 3 is an enlarged cross-sectional view of the upper part of the MOSFET of Example 2.
  • FIG. 3 is an enlarged cross-sectional view of the upper part of the MOSFET of Example 3.
  • FIG. 4 is an enlarged cross-sectional view of the upper part of the MOSFET of Example 4.
  • FIG. 5 is an enlarged cross-sectional view of the upper part of the MOSFET of Example 5.
  • the current diffusion n layer does not need to be in contact with the gate insulating film at the bottom connection surface.
  • the field effect transistor described above may further include a bottom p-layer in contact with the gate insulating film at the lower end of the trench.
  • the electric field applied to the gate insulating film around the bottom end of the trench can be suppressed.
  • the bottom p layer may be in contact with the current diffusion n layer in a range that is in contact with the gate insulating film.
  • the current spreading n layer between the body layer and the bottom p layer may have a thickness of 0.1 ⁇ m or more.
  • the body layer and the bottom p layer can be reliably separated by the current diffusion n layer.
  • a MOSFET (metal-oxide-semiconductor field effect transistor) 10 shown in FIGS. 1 and 2 has a semiconductor substrate 12. Note that in FIGS. 1 and 2, the x direction is a direction parallel to the upper surface 12a of the semiconductor substrate 12, and the y direction is a direction parallel to the upper surface 12a and orthogonal to the x direction.
  • Semiconductor substrate 12 is made of SiC. However, the semiconductor substrate 12 may be made of other semiconductors such as Si and GaN.
  • a plurality of trenches 14 are provided on the upper surface 12a of the semiconductor substrate 12. Each trench 14 extends in the y direction on the upper surface 12a. The trenches 14 are arranged at intervals in the x direction.
  • each trench 14 is covered with a gate insulating film 16.
  • a gate electrode 18 is arranged within each trench 14 .
  • Gate electrode 18 is insulated from semiconductor substrate 12 by gate insulating film 16 .
  • the upper surface of the gate electrode 18 is covered with an interlayer insulating film 20.
  • a source electrode 22 is arranged on the top of the semiconductor substrate 12.
  • the source electrode 22 covers the upper surface 12a of the semiconductor substrate 12 and the interlayer insulating film 20.
  • Gate electrode 18 is insulated from source electrode 22 by interlayer insulating film 20 .
  • the lower surface 12b of the semiconductor substrate 12 is covered with a drain electrode 24.
  • the trench 14 has a side surface 14a, a bottom connection surface 14b, and a bottom surface 14c.
  • the side surface 14a is a flat surface (more specifically, a surface having a radius of curvature of 0.7 ⁇ m or more in cross section) extending along the depth direction (that is, the thickness direction) of the semiconductor substrate 12.
  • the bottom surface 14c is a surface extending substantially parallel to the top surface 12a of the semiconductor substrate 12, and constitutes the lower end of the trench 14.
  • the bottom connecting surface 14b is a concave curved surface connecting the lower end of the side surface 14a and the bottom surface 14c. In cross section, the radius of curvature of the bottom connecting surface 14b is less than 0.7 ⁇ m.
  • the semiconductor substrate 12 has a source layer 30, a body contact layer 32, a body layer 34, a bottom p layer 36, a connection p layer 38, and a bottom n layer 40.
  • the source layer 30 is an n-type layer and is in contact with the gate insulating film 16 at the upper end of the side surface 14a of the trench 14. Source layer 30 is in ohmic contact with source electrode 22 .
  • the body contact layer 32 is a p-type layer and is in ohmic contact with the source electrode 22 at a position adjacent to the source layer 30.
  • the body layer 34 is a p-type layer with a lower p-type impurity concentration than the body contact layer 32.
  • the body layer 34 is in contact with the source layer 30 and the body contact layer 32 from below.
  • the body layer 34 is in contact with the gate insulating film 16 below the source layer 30.
  • the body layer 34 is in contact with the gate insulating film 16 at the side surface 14a of the trench 14.
  • the bottom p layer 36 is a p-type layer and is in contact with the gate insulating film 16 at the bottom surface 14c of the trench 14.
  • the bottom p layer 36 extends along the bottom surface 14c of the trench 14 in the y direction.
  • connection p layer 38 is a p-type layer and protrudes downward from the body layer 34.
  • the connection p layer 38 extends linearly along the x direction when the semiconductor substrate 12 is viewed from above.
  • the connection p layer 38 extends to the depth of the bottom p layer 36 in the depth direction.
  • Connection p layer 38 connects body layer 34 and bottom p layer 36.
  • the lower n-layer 40 is arranged below the body layer 34. Lower n-layer 40 is separated from source layer 30 by body layer 34 . The lower n-layer 40 is distributed from the lower end of the body layer 34 to the lower surface 12b of the semiconductor substrate 12.
  • the lower n-layer 40 includes a current diffusion n-layer 40a, an electric field relaxation n-layer 40b, a drift layer 40c, a buffer layer 40d, and a drain layer 40e.
  • the current diffusion n-layer 40a is an n-type layer having a relatively high n-type impurity concentration.
  • Current diffusion n layer 40a is in contact with body layer 34 from below.
  • the current diffusion n layer 40a is in contact with the gate insulating film 16 below the body layer 34.
  • the electric field relaxation n-layer 40b is an n-type layer having a lower n-type impurity concentration than the current diffusion n-layer 40a.
  • the electric field relaxation n-layer 40b is in contact with the current diffusion n-layer 40a from below.
  • the electric field relaxation n-layer 40b is distributed from the lower end of the current diffusion n-layer 40a to a position below the bottom p-layer 36.
  • the electric field relaxation n layer 40b is in contact with the gate insulating film 16 below the current diffusion n layer 40a.
  • the electric field relaxation n layer 40b is in contact with the side and bottom surfaces of the bottom p layer 36.
  • the drift layer 40c is an n-type layer having a lower n-type impurity concentration than the electric field relaxation n-layer 40b.
  • the drift layer 40c is in contact with the electric field relaxation n layer 40b from below.
  • the buffer layer 40d is an n-type layer having a higher n-type impurity concentration than the drift layer 40c.
  • the buffer layer 40d is in contact with the drift layer 40c from below.
  • the drain layer 40e is an n-type layer having a higher n-type impurity concentration than the buffer layer 40d.
  • the drain layer 40e is in contact with the buffer layer 40d from below.
  • the drain layer 40e is in ohmic contact with the drain electrode 24.
  • the n-type impurity concentration is distributed in a normal distribution in the depth direction of the semiconductor substrate 12.
  • the n-type impurity concentration is distributed in the depth direction of the semiconductor substrate 12 so as to have a peak value nmax.
  • the region where the n-type impurity concentration is normally distributed so as to have the peak value nmax is the current diffusion n layer 40a.
  • the n-type impurity concentration is lower than that in the current diffusion n-layer 40a and is distributed at a substantially constant value.
  • the drift layer 40c the n-type impurity concentration is lower than that in the electric field relaxation n layer 40b and is distributed at a substantially constant value.
  • a portion of the current diffusion n layer 40a having the peak value nmax is in contact with the gate insulating film 16 on the side surface 14a of the trench 14 (ie, the surface with a radius of curvature of 0.7 ⁇ m or more).
  • the entire current diffusion n layer 40a is in contact with the gate insulating film 16 at the side surface 14a of the trench 14. That is, the current diffusion n layer 40a is not in contact with the gate insulating film 16 at the bottom connection surface 14b of the trench 14.
  • the electric field relaxation n layer 40b is in contact with the gate insulating film 16 in a range between the current diffusion n layer 40a and the bottom p layer 36.
  • the electric field relaxation n layer 40b is in contact with the gate insulating film 16 at the bottom connection surface 14b.
  • MOSFET 10 When the MOSFET 10 is used, a higher potential is applied to the drain electrode 24 than to the source electrode 22. Further, the potential of the gate electrode 18 is controlled independently from the potentials of the drain electrode 24 and the source electrode 22. When a potential higher than the gate threshold is applied to the gate electrode 18, a channel is formed in a region adjacent to the gate insulating film 16 in the body layer 34, and the source layer 30 and the current diffusion n-layer 40a are connected by the channel. Ru. Then, electrons flow from the source layer 30 to the drain layer 40e via the channel, the current diffusion n-layer 40a, the electric field relaxation n-layer 40b, the drift layer 40c, and the buffer layer 40d. This turns on MOSFET 10.
  • Current diffusion n-layer 40a has a relatively high n-type impurity concentration and therefore has low resistance. Therefore, electrons flowing into the current diffusion n-layer 40a from the channel tend to flow in the current diffusion n-layer 40a along the x direction. Therefore, in the drift layer 40c located below the current diffusion n-layer 40a, electrons flow toward the drain layer 40e in a state of being dispersed in the x direction. In this way, since electrons flow in a dispersed manner within the drift layer 40c, the on-resistance of the MOSFET 10 is low.
  • MOSFET 10 When the potential of the gate electrode 18 is lowered to a potential below the gate threshold, the channel disappears and the flow of electrons stops. That is, MOSFET 10 is turned off. Then, a depletion layer extends from the body layer 34 into the current diffusion n-layer 40a, the electric field relaxation n-layer 40b, and the drift layer 40c. The voltage between the drain electrode 24 and the source electrode 22 is maintained by the current diffusion n-layer 40a, the electric field relaxation n-layer 40b, and the depletion layer extending within the drift layer 40c. Further, when the MOSFET 10 is turned off, a depletion layer extends from the bottom p layer 36 to the surrounding electric field relaxation n layer 40b. The depletion layer extending from the bottom p-layer 36 suppresses electric field concentration near the bottom end of the trench 14.
  • the electric field relaxation n layer 40b with a low n-type impurity concentration is in contact with the gate insulating film 16 at the bottom connection surface 14b where electric field concentration tends to occur. This prevents an excessively high electric field from being applied to the gate insulating film 16 covering the bottom connection surface 14b, and suppresses dielectric breakdown of the gate insulating film 16 in this portion.
  • the current diffusion n layer 40a having a high n-type impurity concentration is connected to the gate insulating film 16 at the side surface 14a where electric field concentration is difficult to occur. Therefore, an excessively high electric field is prevented from being applied to the area of the gate insulating film 16 in contact with the current diffusion n-layer 40a, and dielectric breakdown of the gate insulating film 16 is suppressed in this area.
  • the on-resistance of the MOSFET 10 can be reduced by the current diffusion n layer 40a while suppressing dielectric breakdown of the gate insulating film 16.
  • the thickness of the current diffusion n layer 40a is thicker than that of MOSFET 10 of Example 1.
  • the other configurations of the MOSFET of the second embodiment are the same as those of the MOSFET 10 of the first embodiment.
  • Example 2 the lower end of the current diffusion n layer 40a is in contact with the gate insulating film 16 at the bottom connection surface 14b.
  • the portion of the current diffusion n layer 40a having the peak value nmax is in contact with the gate insulating film 16 at the side surface 14a. That is, the portion having the peak value nmax is not in contact with the gate insulating film 16 at the bottom connection surface 14b, and the portion of the current diffusion n layer 40a with a low n-type impurity concentration is not in contact with the gate insulating film 16 at the bottom connection surface 14b. are in contact with each other. Therefore, even with this configuration, the electric field applied to the portion of the gate insulating film 16 covering the bottom connection surface 14b can be suppressed.
  • the bottom p-layer 36 can be formed by ion-implanting p-type impurities into the bottom of the trench 14 before forming the gate electrode 18.
  • the bottom p layer 36 may be formed such that the bottom p layer 36 contacts the current diffusion n layer 40a from below in the range in contact with the gate insulating film 16.
  • the bottom p layer 36 is in contact with the gate insulating film 16 over the entire bottom connection surface 14b. Even with this configuration, the electric field applied to the gate insulating film 16 covering the bottom connection surface 14b can be reduced.
  • the thickness T of the current spreading n-layer 40a between the body layer 34 and the bottom p-layer 36 is set to the current spreading layer 40a when no voltage is applied to the MOSFET. It can be made thicker than the width W of the depletion layer generated in the n-layer 40a. Note that the width W of the depletion layer can be calculated using the following formula.
  • Vbi (kT/q) ⁇ ln(NaNd/ni 2 )
  • k the Boltzmann constant
  • T the temperature
  • Na the p-type impurity concentration of the body layer 34
  • ni the intrinsic carrier density
  • the thickness T should be 0.1 ⁇ m or more. I can do it.
  • the electric field relaxation n-layer 40b does not exist, and the drift layer 40c contacts the current diffusion n-layer 40a from below.
  • the other configurations of the MOSFET of the fourth embodiment are the same as those of the MOSFET 10 of the first embodiment.
  • a drift layer 40c having an even lower n-type impurity concentration than the electric field relaxation n layer 40b is in contact with the gate insulating film 16 at the bottom connection surface 14b. Therefore, the electric field applied to the gate insulating film 16 covering the bottom connection surface 14b can be suppressed more effectively.
  • the bottom p layer 36 does not exist.
  • the connection p layer 38 may not be provided.
  • the other configurations of the MOSFET of the fifth embodiment are the same as those of the MOSFET of the fourth embodiment. Even with this configuration, the electric field applied to the gate insulating film 16 covering the bottom connection surface 14b can be suppressed. Note that in Examples 1 and 2, the bottom p layer 36 may not be provided.
  • the electric field relaxation n-layers 40b of Examples 1 to 3 and the drift layers 40c of Examples 4 and 5 are examples of low concentration n-layers.

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
PCT/JP2023/021200 2022-08-26 2023-06-07 電界効果トランジスタ Ceased WO2024042814A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN202380041413.1A CN119234316A (zh) 2022-08-26 2023-06-07 场效应晶体管
EP23856932.1A EP4579759A4 (en) 2022-08-26 2023-06-07 FIELD EFFECT TRANSISTOR
JP2024542598A JP7772236B2 (ja) 2022-08-26 2023-06-07 電界効果トランジスタ
US18/955,087 US20250089293A1 (en) 2022-08-26 2024-11-21 Field effect transistor
JP2025155188A JP2025176181A (ja) 2022-08-26 2025-09-18 電界効果トランジスタ

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JP2022-135237 2022-08-26

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