JPWO2024042814A1 - - Google Patents
Info
- Publication number
- JPWO2024042814A1 JPWO2024042814A1 JP2024542598A JP2024542598A JPWO2024042814A1 JP WO2024042814 A1 JPWO2024042814 A1 JP WO2024042814A1 JP 2024542598 A JP2024542598 A JP 2024542598A JP 2024542598 A JP2024542598 A JP 2024542598A JP WO2024042814 A1 JPWO2024042814 A1 JP WO2024042814A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H10D62/107—Buried supplementary regions, e.g. buried guard rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025155188A JP2025176181A (ja) | 2022-08-26 | 2025-09-18 | 電界効果トランジスタ |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022135237 | 2022-08-26 | ||
| JP2022135237 | 2022-08-26 | ||
| PCT/JP2023/021200 WO2024042814A1 (ja) | 2022-08-26 | 2023-06-07 | 電界効果トランジスタ |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025155188A Division JP2025176181A (ja) | 2022-08-26 | 2025-09-18 | 電界効果トランジスタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024042814A1 true JPWO2024042814A1 (https=) | 2024-02-29 |
| JPWO2024042814A5 JPWO2024042814A5 (https=) | 2024-09-20 |
| JP7772236B2 JP7772236B2 (ja) | 2025-11-18 |
Family
ID=90012970
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024542598A Active JP7772236B2 (ja) | 2022-08-26 | 2023-06-07 | 電界効果トランジスタ |
| JP2025155188A Pending JP2025176181A (ja) | 2022-08-26 | 2025-09-18 | 電界効果トランジスタ |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025155188A Pending JP2025176181A (ja) | 2022-08-26 | 2025-09-18 | 電界効果トランジスタ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250089293A1 (https=) |
| EP (1) | EP4579759A4 (https=) |
| JP (2) | JP7772236B2 (https=) |
| CN (1) | CN119234316A (https=) |
| WO (1) | WO2024042814A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025183962A1 (en) * | 2024-03-01 | 2025-09-04 | Semiconductor Components Industries, Llc | Electronic device including a buried shield and a gap region |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018206872A (ja) * | 2017-05-31 | 2018-12-27 | 国立研究開発法人産業技術総合研究所 | 半導体装置 |
| JP2020031157A (ja) * | 2018-08-23 | 2020-02-27 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
| JP2020113796A (ja) * | 2016-10-31 | 2020-07-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2021034526A (ja) * | 2019-08-22 | 2021-03-01 | 株式会社デンソー | スイッチング素子の製造方法 |
| JP2021182639A (ja) * | 2017-06-06 | 2021-11-25 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
| JP2022002345A (ja) * | 2017-10-05 | 2022-01-06 | 富士電機株式会社 | 半導体装置 |
| WO2022137788A1 (ja) * | 2020-12-24 | 2022-06-30 | 富士電機株式会社 | 絶縁ゲート型半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008016747A (ja) * | 2006-07-10 | 2008-01-24 | Fuji Electric Holdings Co Ltd | トレンチｍｏｓ型炭化珪素半導体装置およびその製造方法 |
| JP4450241B2 (ja) | 2007-03-20 | 2010-04-14 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP5531787B2 (ja) * | 2010-05-31 | 2014-06-25 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| US11942538B2 (en) * | 2019-02-04 | 2024-03-26 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device |
-
2023
- 2023-06-07 WO PCT/JP2023/021200 patent/WO2024042814A1/ja not_active Ceased
- 2023-06-07 CN CN202380041413.1A patent/CN119234316A/zh active Pending
- 2023-06-07 EP EP23856932.1A patent/EP4579759A4/en active Pending
- 2023-06-07 JP JP2024542598A patent/JP7772236B2/ja active Active
-
2024
- 2024-11-21 US US18/955,087 patent/US20250089293A1/en active Pending
-
2025
- 2025-09-18 JP JP2025155188A patent/JP2025176181A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020113796A (ja) * | 2016-10-31 | 2020-07-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2018206872A (ja) * | 2017-05-31 | 2018-12-27 | 国立研究開発法人産業技術総合研究所 | 半導体装置 |
| JP2021182639A (ja) * | 2017-06-06 | 2021-11-25 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
| JP2022002345A (ja) * | 2017-10-05 | 2022-01-06 | 富士電機株式会社 | 半導体装置 |
| JP2020031157A (ja) * | 2018-08-23 | 2020-02-27 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
| JP2021034526A (ja) * | 2019-08-22 | 2021-03-01 | 株式会社デンソー | スイッチング素子の製造方法 |
| WO2022137788A1 (ja) * | 2020-12-24 | 2022-06-30 | 富士電機株式会社 | 絶縁ゲート型半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4579759A4 (en) | 2025-12-03 |
| JP2025176181A (ja) | 2025-12-03 |
| JP7772236B2 (ja) | 2025-11-18 |
| EP4579759A1 (en) | 2025-07-02 |
| CN119234316A (zh) | 2024-12-31 |
| WO2024042814A1 (ja) | 2024-02-29 |
| US20250089293A1 (en) | 2025-03-13 |
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