JP2024023411A5 - - Google Patents

Download PDF

Info

Publication number
JP2024023411A5
JP2024023411A5 JP2023200041A JP2023200041A JP2024023411A5 JP 2024023411 A5 JP2024023411 A5 JP 2024023411A5 JP 2023200041 A JP2023200041 A JP 2023200041A JP 2023200041 A JP2023200041 A JP 2023200041A JP 2024023411 A5 JP2024023411 A5 JP 2024023411A5
Authority
JP
Japan
Prior art keywords
trench
vertical transistor
region
sidewall
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023200041A
Other languages
English (en)
Japanese (ja)
Other versions
JP7723721B2 (ja
JP2024023411A (ja
Filing date
Publication date
Priority claimed from US14/044,909 external-priority patent/US9136368B2/en
Application filed filed Critical
Publication of JP2024023411A publication Critical patent/JP2024023411A/ja
Publication of JP2024023411A5 publication Critical patent/JP2024023411A5/ja
Priority to JP2025129734A priority Critical patent/JP2025163165A/ja
Application granted granted Critical
Publication of JP7723721B2 publication Critical patent/JP7723721B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023200041A 2013-10-03 2023-11-27 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ Active JP7723721B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025129734A JP2025163165A (ja) 2013-10-03 2025-08-01 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/044,909 US9136368B2 (en) 2013-10-03 2013-10-03 Trench gate trench field plate semi-vertical semi-lateral MOSFET
US14/044,909 2013-10-03
JP2020105735A JP7021416B2 (ja) 2013-10-03 2020-06-19 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ
JP2021201394A JP7397554B2 (ja) 2013-10-03 2021-12-13 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2021201394A Division JP7397554B2 (ja) 2013-10-03 2021-12-13 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025129734A Division JP2025163165A (ja) 2013-10-03 2025-08-01 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ

Publications (3)

Publication Number Publication Date
JP2024023411A JP2024023411A (ja) 2024-02-21
JP2024023411A5 true JP2024023411A5 (https=) 2024-03-12
JP7723721B2 JP7723721B2 (ja) 2025-08-14

Family

ID=52776280

Family Applications (6)

Application Number Title Priority Date Filing Date
JP2016520007A Active JP6374492B2 (ja) 2013-10-03 2014-09-26 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ
JP2018135590A Active JP6763644B2 (ja) 2013-10-03 2018-07-19 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ
JP2020105735A Active JP7021416B2 (ja) 2013-10-03 2020-06-19 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ
JP2021201394A Active JP7397554B2 (ja) 2013-10-03 2021-12-13 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ
JP2023200041A Active JP7723721B2 (ja) 2013-10-03 2023-11-27 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ
JP2025129734A Pending JP2025163165A (ja) 2013-10-03 2025-08-01 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ

Family Applications Before (4)

Application Number Title Priority Date Filing Date
JP2016520007A Active JP6374492B2 (ja) 2013-10-03 2014-09-26 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ
JP2018135590A Active JP6763644B2 (ja) 2013-10-03 2018-07-19 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ
JP2020105735A Active JP7021416B2 (ja) 2013-10-03 2020-06-19 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ
JP2021201394A Active JP7397554B2 (ja) 2013-10-03 2021-12-13 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025129734A Pending JP2025163165A (ja) 2013-10-03 2025-08-01 トレンチゲートトレンチフィールドプレート半垂直半横方向ｍｏｓｆｅｔ

Country Status (6)

Country Link
US (2) US9136368B2 (https=)
EP (1) EP3053194A4 (https=)
JP (6) JP6374492B2 (https=)
CN (2) CN110808288B (https=)
DE (1) DE202014011171U1 (https=)
WO (1) WO2015050790A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9385187B2 (en) 2014-04-25 2016-07-05 Texas Instruments Incorporated High breakdown N-type buried layer
US10217821B2 (en) * 2014-09-01 2019-02-26 Sk Hynix System Ic Inc. Power integrated devices, electronic devices and electronic systems including the same
CN107785273B (zh) * 2016-08-31 2020-03-13 无锡华润上华科技有限公司 半导体器件及其制造方法
US10826386B2 (en) * 2018-10-26 2020-11-03 Nxp B.V. Multi-stage charge pump regulation architecture

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3008480B2 (ja) * 1990-11-05 2000-02-14 日産自動車株式会社 半導体装置
JPH06104446A (ja) * 1992-09-22 1994-04-15 Toshiba Corp 半導体装置
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
JP3303601B2 (ja) * 1995-05-19 2002-07-22 日産自動車株式会社 溝型半導体装置
EP1166363B1 (en) * 1999-03-01 2011-06-29 GENERAL SEMICONDUCTOR, Inc. Trench dmos transistor structure having a low resistance path to a drain contact located on an upper surface
GB9917099D0 (en) * 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
JP3704007B2 (ja) * 1999-09-14 2005-10-05 株式会社東芝 半導体装置及びその製造方法
US6812526B2 (en) * 2000-03-01 2004-11-02 General Semiconductor, Inc. Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
US6593620B1 (en) * 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6653691B2 (en) * 2000-11-16 2003-11-25 Silicon Semiconductor Corporation Radio frequency (RF) power devices having faraday shield layers therein
US6657254B2 (en) * 2001-11-21 2003-12-02 General Semiconductor, Inc. Trench MOSFET device with improved on-resistance
RU2230394C1 (ru) * 2002-10-11 2004-06-10 ОАО "ОКБ "Искра" Биполярно-полевой транзистор с комбинированным затвором
GB0407012D0 (en) * 2004-03-27 2004-04-28 Koninkl Philips Electronics Nv Trench insulated gate field effect transistor
JP4721653B2 (ja) 2004-05-12 2011-07-13 トヨタ自動車株式会社 絶縁ゲート型半導体装置
JP4414863B2 (ja) 2004-10-29 2010-02-10 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
JP4692313B2 (ja) * 2006-02-14 2011-06-01 トヨタ自動車株式会社 半導体装置
JP4453671B2 (ja) 2006-03-08 2010-04-21 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
EP2002482A2 (en) * 2006-03-28 2008-12-17 Nxp B.V. Trench-gate semiconductor device and method of fabrication thereof
JP5157164B2 (ja) 2006-05-29 2013-03-06 富士電機株式会社 半導体装置、バッテリー保護回路およびバッテリーパック
KR101375035B1 (ko) 2006-09-27 2014-03-14 맥스파워 세미컨덕터 인크. Ｍｏｓｆｅｔ 및 그 제조 방법
US8653583B2 (en) 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7557406B2 (en) * 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
DE102007014038B4 (de) * 2007-03-23 2015-02-12 Infineon Technologies Austria Ag Verfahren zur Herstellung eines Halbleiterbauelements
KR100861213B1 (ko) * 2007-04-17 2008-09-30 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
JP2009135360A (ja) * 2007-12-03 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
JP5446233B2 (ja) 2008-12-08 2014-03-19 株式会社デンソー 絶縁ゲート型半導体装置の駆動回路およびそれに適した半導体装置
US8519473B2 (en) * 2010-07-14 2013-08-27 Infineon Technologies Ag Vertical transistor component
US9396997B2 (en) * 2010-12-10 2016-07-19 Infineon Technologies Ag Method for producing a semiconductor component with insulated semiconductor mesas
US9443972B2 (en) * 2011-11-30 2016-09-13 Infineon Technologies Austria Ag Semiconductor device with field electrode
US9356133B2 (en) * 2012-02-01 2016-05-31 Texas Instruments Incorporated Medium voltage MOSFET device
US8796760B2 (en) * 2012-03-14 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor and method of manufacturing the same
CN103681315B (zh) * 2012-09-18 2016-08-10 中芯国际集成电路制造(上海)有限公司 埋层的形成方法
US8860130B2 (en) * 2012-11-05 2014-10-14 Alpha And Omega Semiconductor Incorporated Charged balanced devices with shielded gate trench
JP2013055347A (ja) 2012-11-08 2013-03-21 Sanken Electric Co Ltd 半導体装置
JP6143490B2 (ja) 2013-02-19 2017-06-07 ローム株式会社 半導体装置およびその製造方法

Similar Documents

Publication Publication Date Title
JP2024023411A5 (https=)
US20230309312A1 (en) Semiconductor devices including a contact structure that contacts a dummy channel structure
JP2022033954A5 (https=)
CN100429785C (zh) 硅内沟道结构底部的厚氧化层
JP2024009025A5 (https=)
CN107546204B (zh) 包括ldmos晶体管的半导体器件及其制造方法和ldmos晶体管
JP2004530300A5 (https=)
US20070063270A1 (en) Transistors including laterally extended active regions and methods of fabricating the same
US20080111194A1 (en) Semiconductor device including a finfet
JP2022188285A5 (ja) 半導体装置の製造方法
KR102755165B1 (ko) 반도체 소자
WO2020103655A1 (zh) 半导体器件及半导体器件制备方法
US20210005729A1 (en) Semiconductor device and method of manufacturing the same
CN104347625B (zh) 集成电路以及制造集成电路的方法
KR100763337B1 (ko) 매립 게이트 라인을 갖는 반도체소자 및 그 제조방법
JP2022151587A5 (https=)
CN110890424A (zh) 晶体管、半导体器件及其形成方法
CN115020484A (zh) 具有栅极沟槽的半导体装置
JP2016536782A5 (https=)
CN217062020U (zh) 耗尽型沟槽晶体管
JP2022139078A5 (https=)
US20250016979A1 (en) Semiconductor device
WO2014050590A1 (ja) 半導体装置及びその製造方法
KR100668741B1 (ko) 반도체 소자의 게이트 및 그 형성 방법
JPWO2023189058A5 (https=)