JP6763644B2 - トレンチゲートトレンチフィールドプレート半垂直半横方向mosfet - Google Patents
トレンチゲートトレンチフィールドプレート半垂直半横方向mosfet Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 50
- 210000000746 body region Anatomy 0.000 claims description 17
- 239000003989 dielectric material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 3
- 238000000034 method Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
Appels, et al. "Thin Layer High Voltage Devices" Philips J, Res. 35 1−13, 1980
Claims (10)
- 縦型MOSトランジスタであって、
半導体基板と、
前記半導体基板に形成される複数のトランジスタ構造と、
を含み、
前記複数のトランジスタ構造の各トランジスタ構造が、
側壁と底部を有し、第1の方向に延在するゲートトレンチであって、前記側壁と前記底部の上にゲート誘電層が形成され、前記ゲート誘電層の上にゲートが形成される、前記ゲートトレンチと、
前記ゲートトレンチを挟んで、かつ前記ゲートトレンチから離れて配置される一対のトレンチであって、前記一対のトレンチの各トレンチが、前記第1の方向に延在し、前記第1の方向に垂直な第2の方向で前記ゲートトレンチから離れて配置され、かつ前記各トレンチが、側壁と底部を有し、また、前記各トレンチの前記側壁と前記底部の上に直接に形成される誘電体材料のみで作られる誘電体ライナーと、前記誘電体ライナーの上に直接に形成される導電性部材とを有する、前記一対のトレンチと、
前記基板の表面に形成され、前記第2の方向で前記ゲートトレンチと前記一対のトレンチの両トレンチの間の領域にわたって延在する第1の導電型のソース領域と、
前記基板において前記ソース領域の下に形成され、前記ゲートトレンチの前記側壁と前記一対のトレンチの各トレンチの前記側壁に隣接する第2の導電型のボディ領域と、
前記基板において前記ボディ領域の下に形成される前記第1の導電型のドリフト領域と、
を含み、
前記複数のトランジスタ構造が、前記第2の方向に所定の距離を備えて配置され、前記所定の距離の領域は、不純物が注入された領域である、縦型MOSトランジスタ。 - 請求項1に記載の縦型MOSトランジスタであって、
前記一対のトレンチの各トレンチにおける前記導電性部材が前記ソース領域に電気的に結合している、縦型MOSトランジスタ。 - 請求項1又は2に記載の縦型MOSトランジスタであって、
前記一対のトレンチの各トレンチの幅が0.5μm〜1.5μmである、縦型MOSトランジスタ。 - 請求項1乃至3のいずれか1つに記載の縦型MOSトランジスタであって、
前記所定の距離が0.5μm〜2.5μmである、縦型MOSトランジスタ。 - 請求項1乃至4のいずれか1つに記載の縦型MOSトランジスタであって、
前記誘電体ライナーがシリコン窒化物を含む、縦型MOSトランジスタ。 - 請求項1乃至4のいずれか1つに記載の縦型MOSトランジスタであって、
前記誘電体ライナーがシリコンオキシナイトライドを含む、縦型MOSトランジスタ。 - 請求項1乃至6のいずれか1つに記載の縦型MOSトランジスタであって、
前記所定の距離の前記領域が、前記第1の導電型を有し、前記縦型MOSトランジスタのドレインコンタクトを形成する、縦型MOSトランジスタ。 - 請求項1に記載の縦型MOSトランジスタであって、
前記不純物が注入された領域が、前記トランジスタ構造のドレインコンタクト領域であって、前記基板において前記一対のトレンチの底部よりも下に延在する、縦型MOSトランジスタ。 - 請求項1に記載の縦型MOSトランジスタであって、
前記ドリフト領域が、前記一対のトレンチを含む閉ループトレンチ構成により囲まれる、縦型MOSトランジスタ。 - 請求項1に記載の縦型MOSトランジスタであって、
前記不純物が注入された領域が、前記トランジスタ構造のドレインコンタクト領域であって、前記一対のトレンチを含む閉ループトレンチ構成により囲まれる、縦型MOSトランジスタ。
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