JP2018201028A - トレンチゲートトレンチフィールドプレート半垂直半横方向mosfet - Google Patents
トレンチゲートトレンチフィールドプレート半垂直半横方向mosfet Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 210000000746 body region Anatomy 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 36
- 239000002019 doping agent Substances 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
Appels, et al. "Thin Layer High Voltage Devices" Philips J, Res. 35 1−13, 1980
Claims (20)
- 半導体デバイスであって、
第1の導電型を有する半導体を含む基板、及び
垂直のドレイン拡張された金属酸化物半導体(MOS)トランジスタ、
を含み、
前記垂直のドレイン拡張されたMOSトランジスタが、
前記基板に配置される少なくとも1ミクロンの深さのディープトレンチ構造であって、前記基板に隣接する誘電体ライナーを有する、前記ディープトレンチ構造と、
前記基板に配置される前記第1の導電型とは反対の第2の導電型を有する垂直ドレインコンタクト領域であって、前記垂直ドレインコンタクト領域が、前記ディープトレンチ構造に隣接し、且つ、前記ディープトレンチ構造により少なくとも2つの対向する側部で区分されており、前記ディープトレンチ構造の底部より下に延在する、前記垂直ドレインコンタクト領域と、
前記基板に配置され、前記第2の導電型を有する垂直に向けられるドリフト領域であって、前記垂直に向けられるドリフト領域が、前記ディープトレンチ構造の一部により前記垂直ドレインコンタクト領域から横方向に分離されており、前記ディープトレンチ構造の前記底部に近接する前記垂直ドレインコンタクト領域への電気的コンタクトを成す、前記垂直に向けられるドリフト領域と、
前記垂直に向けられるドリフト領域の上に配置される前記第1の導電型を有するボディ領域と、
を含む、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記垂直ドレインコンタクト領域が、前記垂直ドレインコンタクト領域に隣接する前記ディープトレンチ構造を横方向に過ぎて延在しない、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記垂直ドレインコンタクト領域が、前記垂直ドレインコンタクト領域に隣接する前記ディープトレンチ構造を過ぎて横方向に延在する、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記垂直ドレインコンタクト領域が、前記垂直に向けられるドリフト領域の下で横方向に延在し、前記垂直ドレインコンタクト領域の近傍の部分に隣接する、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記垂直ドレインコンタクト領域が、前記ディープトレンチ構造により横方向に囲まれ、前記ディープトレンチ構造が閉ループ構成を有する、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記垂直に向けられるドリフト領域が、前記ディープトレンチ構造により横方向に囲まれ、前記ディープトレンチ構造が閉ループ構成を有する、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記ボディ領域が、前記ボディ領域とは反対の前記垂直ドレインコンタクト領域に隣接する前記ディープトレンチ構造の前記部分に隣接する、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記ボディ領域が、前記ボディ領域とは反対の前記垂直ドレインコンタクト領域に隣接する前記ディープトレンチ構造の前記部分から誘電体材料により横方向に分離される、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記ディープトレンチ構造が2.5ミクロン〜5ミクロンの深さである、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記第1の導電型がp型であり、前記第2の導電型がn型である、半導体デバイス。 - 半導体デバイスを形成する方法であって、前記方法が、
第1の導電型を有する半導体を含む基板を提供すること、及び
垂直のドレイン拡張されたMOSトランジスタを形成することであって、
前記垂直のドレイン拡張されたMOSトランジスタを形成することが、
前記第1の導電型とは反対の第2の導電型のドーパントを、垂直に向けられるドリフト領域のために画定されるエリアにおいて前記基板に注入することと、
前記基板において少なくとも1ミクロンの深さのディープ隔離トレンチを形成することであって、前記垂直に向けられるドリフト領域のために画定された前記エリアに隣接する前記ディープ隔離トレンチを形成することと、
少なくとも一つのディープトレンチ構造を形成するために、前記ディープ隔離トレンチに前記基板に接する誘電体ライナーを形成することと、
前記ディープトレンチ構造により少なくとも2つの対向する側部で区分される垂直ドレインコンタクト領域のために画定されるエリアにおいて前記基板に前記第2の導電型のドーパントを注入することであって、前記垂直ドレインコンタクト領域における前記ドーパントのドーズ量が、前記垂直に向けられるドリフト領域における前記ドーパントのドーズ量より少なくとも10倍高くなるようにし、前記垂直に向けられるドリフト領域が、前記ディープトレンチ構造の一部により前記垂直ドレインコンタクト領域から横方向に分離される、前記ドーパントを注入することと、
それぞれ、前記垂直に向けられるドリフト領域及び前記垂直ドレインコンタクト領域を形成するために、前記垂直に向けられるドリフト領域のために画定された前記エリア及び前記ドレインコンタクト領域のために画定された前記エリアにおける前記注入されたドーパントを活性化及び拡散するように前記基板を加熱する熱駆動オペレーションを実施することであって、そのため、前記垂直ドレインコンタクト領域が前記ディープトレンチ構造の底部より下に延在するようにし、及び、前記垂直に向けられるドリフト領域が、前記ディープトレンチ構造の前記底部に近接する前記垂直ドレインコンタクト領域との電気的コンタクトを成すようにする、前記熱駆動オペレーションを実施することと、
前記垂直に向けられるドリフト領域の上に配置される前記第1の導電型を有するボディ領域を形成することと、
を含むプロセスにより、前記垂直のドレイン拡張されたMOSトランジスタを形成すること、
を含む、方法。 - 請求項11に記載の方法であって、
更に、前記ディープ隔離トレンチにおける前記誘電体ライナー上に導電性中央部材を形成することを含む、方法。 - 請求項12に記載の方法であって、
前記導電性中央部材がポリシリコンを含み、前記垂直ドレインコンタクト領域においてドーパントを注入することが、ドーパントを前記導電性中央部材に提供する、方法。 - 請求項11に記載の方法であって、
前記垂直ドレインコンタクト領域が、前記垂直に向けられるドリフト領域の下で横方向に延在し、前記垂直ドレインコンタクト領域の近隣の部分に接する、方法。 - 請求項11に記載の方法であって、
前記垂直ドレインコンタクト領域が、前記ディープトレンチ構造により横方向に囲まれ、前記ディープトレンチ構造が閉ループ構成を有する、方法。 - 請求項11に記載の方法であって、
前記垂直に向けられるドリフト領域が、前記ディープトレンチ構造により横方向に囲まれ、前記ディープトレンチ構造が閉ループ構成を有する、方法。 - 請求項11に記載の方法であって、
前記ボディ領域が、前記ボディ領域とは反対の前記垂直ドレインコンタクト領域に隣接する前記ディープトレンチ構造の前記部分に隣接する、方法。 - 請求項11に記載の方法であって、
前記ボディ領域が、前記ボディ領域とは反対の前記垂直ドレインコンタクト領域に隣接する前記ディープトレンチ構造の前記部分から誘電性材料により横方向に分離される、方法。 - 請求項11に記載の方法であって、
前記ディープトレンチ構造が2.5ミクロン〜5ミクロンの深さである、方法。 - 請求項11に記載の方法であって、
前記第1の導電型がp型であり、前記第2の導電型がn型である、方法。
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