JP5939846B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 210000000746 body region Anatomy 0.000 claims description 36
- 229910021332 silicide Inorganic materials 0.000 claims description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 19
- 239000012535 impurity Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- YWCYJWYNSHTONE-UHFFFAOYSA-O oxido(oxonio)boron Chemical compound [OH2+][B][O-] YWCYJWYNSHTONE-UHFFFAOYSA-O 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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Description
第1導電型の半導体基板に、第2導電型の埋め込み層を形成する工程と、前記埋め込み層上に第2導電型のエピタキシャル層を形成する工程と、前記第2導電型のエピタキシャル層の表面から一定の深さまで、第1導電型のボディ領域を形成する工程と、前記ボディ領域の表面を構成している半導体材料を除去して、凸型コンタクト領域の周囲にシャロートレンチを形成する工程と、前記シャロートレンチの表面の一部から前記第2導電型のエピタキシャル層内にまで至る、深いトレンチ領域を形成する工程と、前記深いトレンチ領域の内壁にゲート絶縁膜を形成する工程と、前記ゲート絶縁膜に接して、前記深いトレンチ領域内を多結晶シリコンにより充填する工程と、前記ボディ領域表面の前記シャロートレンチ内に第2導電型のソース領域を形成する工程と、前記ボディ領域表面の前記凸型コンタクト領域に第1導電型のボディコンタクト領域を形成する工程と、前記ソース領域および前記ボディコンタクト領域とを接続するシリサイド層を形成する工程とからなり、
前記凸型コンタクト領域の、表面すべてが前記ボディコンタクト領域であり、前記ソース領域の表面と共に前記シリサイド層で覆われていることを特徴とする半導体装置の製造方法とした。
第1導電型の半導体基板に、第2導電型の埋め込み層を形成する工程と、前記埋め込み層上に第2導電型のエピタキシャル層を形成する工程と、前記エピタキシャル層の表面の特定の領域に凹型コンタクト領域とするためのシャロートレンチを形成する工程と、前記エピタキシャル層の表面からの距離が一定となるように、前記凹型コンタクト領域がない平坦な領域の下では浅く、前記凹型コンタクト領域の下では深くて前記埋め込み層に向かって突出している第1導電型のボディ領域を形成する工程と、前記ボディ領域の表面から前記エピタキシャル層内にまで至る深いトレンチを、前記平坦な領域に形成する工程と、前記深いトレンチ領域の内壁にゲート絶縁膜を形成する工程と、前記ゲート絶縁膜に接する、前記深いトレンチ領域内を多結晶シリコンにより充填する工程と、前記ボディ領域表面の前記平坦な領域に第2導電型のソース領域を形成する工程と、前記ボディ領域表面の前記凹型コンタクト領域に沿って第1導電型のボディコンタクト領域を形成する工程と、前記ソース領域および前記ボディコンタクト領域とを接続するシリサイド層を形成する工程とからなり、
前記凹型コンタクト領域の、表面すべてが前記ボディコンタクト領域であり、前記ソース領域の表面と共に前記シリサイド層で覆われていることを特徴とする半導体装置の製造方法とした。
また、トレンチMOSFETと同一基板上に形成されるCMOSについては詳細説明していないが、上記に示した工程はCMOS形成にあたって、何ら障害となる工程は存在せず、トレンチMOSFETとCMOSを同一基板上に形成することは容易である。
図3(a)において、P型半導体基板1上に形成されたN型型埋め込み層2に上、epi層3(ここではN−epi層3と呼ぶ)が設置され、全体的にN型不純物がドープされている。N型埋め込み層2はSb(アンチモン)、あるいはAs(砒素)、またあるいはP(リン)をドープすることにより形成され、5×1017/cm3〜5×1019/cm3の濃度を有する、またN−epi層3は、リンをドープすることで実現され、1×1015/cm3〜5×1017/cm3の濃度を有する。N型埋め込み層2の厚みは約2〜10μm厚であり、N−epi層3の厚みは2〜10μmである。
また、トレンチMOSFETと同一基板上に形成されるCMOSについては一切触れていないが、上記に示した工程はCMOS形成にあたって、何ら障害となる工程は存在せず、トレンチMOSFETとCMOSを同一基板上に形成することは容易である。
(1)ボディの電位をとるためのシリコン高濃度領域とシリサイド層の接触面積を大きく取ることが可能になり、接触面積がおなじであれば実質のボディコンタクト領域の面積である平面的なボディコンタクト領域の大きさを小さくできるので、同一面積でON抵抗の低いトレンチMOSFETを形成することができる
(2)STIあるいはLocosプロセスのような安定した工程を利用することにより、ばらつきを最小限に抑えつつ、高度な特性を持つデバイスを製造することができる
2 N型型埋め込み層
3 N−epi層
4 P型ボディ領域
5 凸型コンタクト
6 深いトレンチ
7 ゲート酸化膜
8 ゲート電極
9 N型ソース領域
10、30 P型ボディコンタクト領域
11 シリサイド層
12 シャロートレンチ
15 凹型コンタクト
16 平坦な領域
Claims (4)
- 第1導電型の半導体基板に、第2導電型の埋め込み層を形成する工程と、
前記埋め込み層上に第2導電型のエピタキシャル層を形成する工程と、
前記第2導電型のエピタキシャル層の表面から一定の深さまで、第1導電型のボディ領域を形成する工程と、
前記ボディ領域の表面を構成している半導体材料を除去して、凸型コンタクト領域の周囲にシャロートレンチを形成する工程と、
前記シャロートレンチの表面の一部から前記第2導電型のエピタキシャル層内にまで至る、深いトレンチ領域を形成する工程と、
前記深いトレンチ領域の内壁にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜に接して、前記深いトレンチ領域内を多結晶シリコンにより充填する工程と、
前記ボディ領域表面の前記シャロートレンチ内に第2導電型のソース領域を形成する工程と、
前記ボディ領域表面の前記凸型コンタクト領域に第1導電型のボディコンタクト領域を形成する工程と、
前記ソース領域および前記ボディコンタクト領域とを接続するシリサイド層を形成する工程と、
からなり、
前記凸型コンタクト領域の、表面すべてが前記ボディコンタクト領域であり、前記ソース領域の表面と共に前記シリサイド層で覆われていることを特徴とする半導体装置の製造方法。 - 前記シャロートレンチの深さが、200nm〜600nmの範囲内であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記シャロートレンチを形成する工程が、LOCOS酸化膜を形成する工程と、そのLOCOS酸化膜を除去する工程とからなることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記LOCOS酸化膜の膜厚は50nm〜150nmの範囲内であることを特徴とする、請求項3に記載の半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012053555A JP5939846B2 (ja) | 2012-03-09 | 2012-03-09 | 半導体装置の製造方法 |
US13/779,860 US9231081B2 (en) | 2012-03-09 | 2013-02-28 | Method of manufacturing a semiconductor device |
TW102107490A TWI570811B (zh) | 2012-03-09 | 2013-03-04 | Manufacturing method of semiconductor device |
CN201310075119.0A CN103311127B (zh) | 2012-03-09 | 2013-03-08 | 半导体装置的制造方法 |
KR1020130025005A KR101985664B1 (ko) | 2012-03-09 | 2013-03-08 | 반도체 장치의 제조 방법 |
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US9397040B2 (en) * | 2014-03-07 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device comprising metal plug having substantially convex bottom surface |
JP2015210834A (ja) | 2014-04-25 | 2015-11-24 | 株式会社東芝 | パターン形成方法、及び磁気記録媒体の製造方法 |
JP6673806B2 (ja) * | 2016-11-15 | 2020-03-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6830390B2 (ja) * | 2017-03-28 | 2021-02-17 | エイブリック株式会社 | 半導体装置 |
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JPS63186476A (ja) * | 1987-01-29 | 1988-08-02 | Nissan Motor Co Ltd | 縦形mosfet |
JPH11145465A (ja) * | 1997-11-12 | 1999-05-28 | Nec Corp | 縦型電界効果トランジスタ及びその製造方法 |
JP2000232207A (ja) * | 1999-02-10 | 2000-08-22 | Nec Corp | 半導体装置およびその製造方法 |
JP3524850B2 (ja) | 2000-08-03 | 2004-05-10 | 三洋電機株式会社 | 絶縁ゲート型電界効果半導体装置 |
JP3906076B2 (ja) * | 2001-01-31 | 2007-04-18 | 株式会社東芝 | 半導体装置 |
US7229499B2 (en) * | 2003-08-22 | 2007-06-12 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
JP5132123B2 (ja) * | 2006-11-01 | 2013-01-30 | 株式会社東芝 | 電力用半導体素子 |
JP2009076762A (ja) * | 2007-09-21 | 2009-04-09 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
KR100902585B1 (ko) | 2007-12-28 | 2009-06-11 | 주식회사 동부하이텍 | 트렌치 게이트형 모스트랜지스터 및 그 제조방법 |
JP5442951B2 (ja) * | 2008-02-26 | 2014-03-19 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
US8067798B2 (en) * | 2008-03-31 | 2011-11-29 | Rohm Co., Ltd. | Semiconductor device |
CN101656213B (zh) * | 2008-08-19 | 2012-09-26 | 尼克森微电子股份有限公司 | 沟槽栅金属氧化物半导体场效应晶体管及其制作方法 |
JP2010147219A (ja) * | 2008-12-18 | 2010-07-01 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
JP5149922B2 (ja) * | 2010-02-23 | 2013-02-20 | 富士電機株式会社 | 半導体素子 |
JP2011204808A (ja) * | 2010-03-25 | 2011-10-13 | Panasonic Corp | 半導体装置および半導体装置の製造方法 |
CN102214691B (zh) * | 2010-04-09 | 2014-03-19 | 力士科技股份有限公司 | 一种沟槽金属氧化物半导体场效应管及其制造方法 |
US8378445B2 (en) * | 2010-08-31 | 2013-02-19 | Infineon Technologies Ag | Trench structures in direct contact |
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JP2013187499A (ja) | 2013-09-19 |
US9231081B2 (en) | 2016-01-05 |
KR20130103430A (ko) | 2013-09-23 |
KR101985664B1 (ko) | 2019-06-04 |
TWI570811B (zh) | 2017-02-11 |
TW201347047A (zh) | 2013-11-16 |
CN103311127B (zh) | 2017-04-12 |
CN103311127A (zh) | 2013-09-18 |
US20130244385A1 (en) | 2013-09-19 |
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