JPWO2023189058A5 - - Google Patents

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Publication number
JPWO2023189058A5
JPWO2023189058A5 JP2024511475A JP2024511475A JPWO2023189058A5 JP WO2023189058 A5 JPWO2023189058 A5 JP WO2023189058A5 JP 2024511475 A JP2024511475 A JP 2024511475A JP 2024511475 A JP2024511475 A JP 2024511475A JP WO2023189058 A5 JPWO2023189058 A5 JP WO2023189058A5
Authority
JP
Japan
Prior art keywords
semiconductor device
region
trench structure
sic semiconductor
sidewall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024511475A
Other languages
English (en)
Japanese (ja)
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JPWO2023189058A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/006637 external-priority patent/WO2023189058A1/ja
Publication of JPWO2023189058A1 publication Critical patent/JPWO2023189058A1/ja
Publication of JPWO2023189058A5 publication Critical patent/JPWO2023189058A5/ja
Pending legal-status Critical Current

Links

JP2024511475A 2022-03-31 2023-02-24 Pending JPWO2023189058A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022061146 2022-03-31
PCT/JP2023/006637 WO2023189058A1 (ja) 2022-03-31 2023-02-24 ＳｉＣ半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023189058A1 JPWO2023189058A1 (https=) 2023-10-05
JPWO2023189058A5 true JPWO2023189058A5 (https=) 2024-12-10

Family

ID=88200452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024511475A Pending JPWO2023189058A1 (https=) 2022-03-31 2023-02-24

Country Status (3)

Country Link
US (1) US20250022916A1 (https=)
JP (1) JPWO2023189058A1 (https=)
WO (1) WO2023189058A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023015636A (ja) * 2021-07-20 2023-02-01 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015103067B3 (de) * 2015-03-03 2016-09-01 Infineon Technologies Ag Halbleitervorrichtung mit trenchgatestrukturen in einem halbleiterkörper mit hexagonalem kristallgitter
JP7067021B2 (ja) * 2017-11-07 2022-05-16 富士電機株式会社 絶縁ゲート型半導体装置及びその製造方法
US12080760B2 (en) * 2018-08-07 2024-09-03 Rohm Co., Ltd. SiC semiconductor device
JP7246237B2 (ja) * 2019-04-15 2023-03-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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