JP2019029651A5 - - Google Patents
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- JP2019029651A5 JP2019029651A5 JP2018117316A JP2018117316A JP2019029651A5 JP 2019029651 A5 JP2019029651 A5 JP 2019029651A5 JP 2018117316 A JP2018117316 A JP 2018117316A JP 2018117316 A JP2018117316 A JP 2018117316A JP 2019029651 A5 JP2019029651 A5 JP 2019029651A5
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- 239000012535 impurity Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 51
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000002344 surface layer Substances 0.000 claims 2
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201880048878.9A CN110945633B (zh) | 2017-07-26 | 2018-07-26 | 半导体装置 |
| PCT/JP2018/028142 WO2019022205A1 (ja) | 2017-07-26 | 2018-07-26 | 半導体装置 |
| US16/695,753 US11355589B2 (en) | 2017-07-26 | 2019-11-26 | Semiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017144726 | 2017-07-26 | ||
| JP2017144726 | 2017-07-26 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019029651A JP2019029651A (ja) | 2019-02-21 |
| JP2019029651A5 true JP2019029651A5 (https=) | 2019-11-07 |
| JP6787367B2 JP6787367B2 (ja) | 2020-11-18 |
Family
ID=65478840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018117316A Active JP6787367B2 (ja) | 2017-07-26 | 2018-06-20 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11355589B2 (https=) |
| JP (1) | JP6787367B2 (https=) |
| CN (1) | CN110945633B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6973422B2 (ja) | 2019-01-21 | 2021-11-24 | 株式会社デンソー | 半導体装置の製造方法 |
| JP7211393B2 (ja) | 2020-04-22 | 2023-01-24 | 株式会社デンソー | 半導体装置 |
| US12408360B2 (en) * | 2022-05-13 | 2025-09-02 | Wolfspeed, Inc. | Vertical power devices having mesas and etched trenches therebetween |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5945701A (en) | 1997-12-19 | 1999-08-31 | Northrop Grumman Corporation | Static induction transistor |
| CN100370626C (zh) | 1999-12-21 | 2008-02-20 | 住友电气工业株式会社 | 横向结型场效应晶体管 |
| EP2081219B1 (en) | 1999-12-24 | 2011-01-05 | Sumitomo Electric Industries, Ltd. | Junction field effect transistor |
| JP2005005385A (ja) * | 2003-06-10 | 2005-01-06 | Toshiba Corp | 半導体装置 |
| US7187021B2 (en) | 2003-12-10 | 2007-03-06 | General Electric Company | Static induction transistor |
| US7279368B2 (en) | 2005-03-04 | 2007-10-09 | Cree, Inc. | Method of manufacturing a vertical junction field effect transistor having an epitaxial gate |
| JP4935160B2 (ja) | 2006-04-11 | 2012-05-23 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP2007294716A (ja) | 2006-04-26 | 2007-11-08 | Hitachi Ltd | 半導体装置 |
| US7994548B2 (en) | 2008-05-08 | 2011-08-09 | Semisouth Laboratories, Inc. | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making |
| US7977713B2 (en) | 2008-05-08 | 2011-07-12 | Semisouth Laboratories, Inc. | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making |
| JP5326405B2 (ja) * | 2008-07-30 | 2013-10-30 | 株式会社デンソー | ワイドバンドギャップ半導体装置 |
| JP5906914B2 (ja) | 2012-04-19 | 2016-04-20 | 株式会社豊田中央研究所 | トランジスタの駆動回路 |
| US9209318B2 (en) | 2013-02-20 | 2015-12-08 | Infineon Technologies Austria Ag | Vertical JFET with body diode and device regions disposed in a single compound epitaxial layer |
| JP6160216B2 (ja) * | 2013-05-09 | 2017-07-12 | 富士電機株式会社 | 半導体装置 |
| JP6148070B2 (ja) | 2013-05-27 | 2017-06-14 | ルネサスエレクトロニクス株式会社 | 縦チャネル型ジャンクションＳｉＣパワーＦＥＴおよびその製造方法 |
| US10325988B2 (en) * | 2013-12-13 | 2019-06-18 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped field plates |
| US9711660B2 (en) * | 2014-03-13 | 2017-07-18 | Infineon Technologies Ag | JFET and method of manufacturing thereof |
| JP2017063079A (ja) * | 2015-09-24 | 2017-03-30 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP6565815B2 (ja) * | 2016-07-21 | 2019-08-28 | 株式会社デンソー | 半導体装置 |
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2018
- 2018-06-20 JP JP2018117316A patent/JP6787367B2/ja active Active
- 2018-07-26 CN CN201880048878.9A patent/CN110945633B/zh active Active
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2019
- 2019-11-26 US US16/695,753 patent/US11355589B2/en active Active