JPWO2022270245A5 - - Google Patents

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Publication number
JPWO2022270245A5
JPWO2022270245A5 JP2023529758A JP2023529758A JPWO2022270245A5 JP WO2022270245 A5 JPWO2022270245 A5 JP WO2022270245A5 JP 2023529758 A JP2023529758 A JP 2023529758A JP 2023529758 A JP2023529758 A JP 2023529758A JP WO2022270245 A5 JPWO2022270245 A5 JP WO2022270245A5
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JP
Japan
Prior art keywords
region
conductivity type
main surface
electric field
silicon carbide
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Pending
Application number
JP2023529758A
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English (en)
Japanese (ja)
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JPWO2022270245A1 (https=
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Priority claimed from PCT/JP2022/022109 external-priority patent/WO2022270245A1/ja
Publication of JPWO2022270245A1 publication Critical patent/JPWO2022270245A1/ja
Publication of JPWO2022270245A5 publication Critical patent/JPWO2022270245A5/ja
Pending legal-status Critical Current

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JP2023529758A 2021-06-23 2022-05-31 Pending JPWO2022270245A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021104166 2021-06-23
PCT/JP2022/022109 WO2022270245A1 (ja) 2021-06-23 2022-05-31 炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
JPWO2022270245A1 JPWO2022270245A1 (https=) 2022-12-29
JPWO2022270245A5 true JPWO2022270245A5 (https=) 2024-03-27

Family

ID=84545575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023529758A Pending JPWO2022270245A1 (https=) 2021-06-23 2022-05-31

Country Status (2)

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JP (1) JPWO2022270245A1 (https=)
WO (1) WO2022270245A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024138816A (ja) * 2023-03-27 2024-10-09 株式会社東芝 半導体装置及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016157606A1 (ja) * 2015-03-30 2016-10-06 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
DE112017002020B4 (de) * 2016-04-14 2023-03-02 National Institute Of Advanced Industrial Science And Technology Siliziumkarbid-halbleitervorrichtung und verfahren zur herstellung derselben
WO2020110514A1 (ja) * 2018-11-29 2020-06-04 富士電機株式会社 超接合炭化珪素半導体装置および超接合炭化珪素半導体装置の製造方法
JP7263178B2 (ja) * 2019-08-02 2023-04-24 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機

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