JPWO2024117131A5 - - Google Patents

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Publication number
JPWO2024117131A5
JPWO2024117131A5 JP2024561511A JP2024561511A JPWO2024117131A5 JP WO2024117131 A5 JPWO2024117131 A5 JP WO2024117131A5 JP 2024561511 A JP2024561511 A JP 2024561511A JP 2024561511 A JP2024561511 A JP 2024561511A JP WO2024117131 A5 JPWO2024117131 A5 JP WO2024117131A5
Authority
JP
Japan
Prior art keywords
trench
semiconductor device
edge
insulating film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024561511A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024117131A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/042566 external-priority patent/WO2024117131A1/ja
Publication of JPWO2024117131A1 publication Critical patent/JPWO2024117131A1/ja
Publication of JPWO2024117131A5 publication Critical patent/JPWO2024117131A5/ja
Pending legal-status Critical Current

Links

JP2024561511A 2022-11-30 2023-11-28 Pending JPWO2024117131A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022192213 2022-11-30
PCT/JP2023/042566 WO2024117131A1 (ja) 2022-11-30 2023-11-28 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024117131A1 JPWO2024117131A1 (https=) 2024-06-06
JPWO2024117131A5 true JPWO2024117131A5 (https=) 2025-08-12

Family

ID=91324104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024561511A Pending JPWO2024117131A1 (https=) 2022-11-30 2023-11-28

Country Status (3)

Country Link
US (1) US20250294804A1 (https=)
JP (1) JPWO2024117131A1 (https=)
WO (1) WO2024117131A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118412381B (zh) * 2024-07-02 2024-10-18 华羿微电子股份有限公司 一种高性能mosfet功率器件外延设计结构、制作方法及应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6967352B2 (ja) * 2017-02-07 2021-11-17 ローム株式会社 半導体装置および半導体装置の製造方法、ならびに、半導体ウエハ構造物
JP7201336B2 (ja) * 2017-05-17 2023-01-10 ローム株式会社 半導体装置
JP2019129300A (ja) * 2018-01-26 2019-08-01 トヨタ自動車株式会社 半導体装置とその製造方法
JP6664445B2 (ja) * 2018-08-10 2020-03-13 ローム株式会社 ＳｉＣ半導体装置
DE212020000485U1 (de) * 2019-05-22 2021-07-19 Rohm Co., Ltd. SiC-Halbleiterbauteil
JP7293159B2 (ja) * 2020-03-19 2023-06-19 株式会社東芝 半導体装置
CN115917757A (zh) * 2020-07-31 2023-04-04 罗姆股份有限公司 SiC半导体装置
JP7766031B2 (ja) * 2020-07-31 2025-11-07 ローム株式会社 ＳｉＣ半導体装置

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