JPWO2022158053A5 - - Google Patents

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JPWO2022158053A5
JPWO2022158053A5 JP2022576971A JP2022576971A JPWO2022158053A5 JP WO2022158053 A5 JPWO2022158053 A5 JP WO2022158053A5 JP 2022576971 A JP2022576971 A JP 2022576971A JP 2022576971 A JP2022576971 A JP 2022576971A JP WO2022158053 A5 JPWO2022158053 A5 JP WO2022158053A5
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active
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semiconductor device
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JP2022576971A
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JP7459976B2 (ja
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Priority claimed from PCT/JP2021/036687 external-priority patent/WO2022158053A1/ja
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JP2022576971A 2021-01-25 2021-10-04 半導体装置 Active JP7459976B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021009648 2021-01-25
JP2021009648 2021-01-25
PCT/JP2021/036687 WO2022158053A1 (ja) 2021-01-25 2021-10-04 半導体装置

Publications (3)

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JPWO2022158053A1 JPWO2022158053A1 (https=) 2022-07-28
JPWO2022158053A5 true JPWO2022158053A5 (https=) 2023-03-16
JP7459976B2 JP7459976B2 (ja) 2024-04-02

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JP2022576971A Active JP7459976B2 (ja) 2021-01-25 2021-10-04 半導体装置

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US (1) US12575149B2 (https=)
JP (1) JP7459976B2 (https=)
CN (1) CN115769382A (https=)
DE (1) DE112021002612T5 (https=)
WO (1) WO2022158053A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022158053A1 (ja) 2021-01-25 2022-07-28 富士電機株式会社 半導体装置
JP7593511B2 (ja) * 2022-01-20 2024-12-03 富士電機株式会社 半導体装置
JP2024034141A (ja) * 2022-08-31 2024-03-13 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2025142731A1 (ja) * 2023-12-28 2025-07-03 ローム株式会社 半導体装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4028333B2 (ja) * 2002-09-02 2007-12-26 株式会社東芝 半導体装置
JP3934613B2 (ja) 2004-01-21 2007-06-20 株式会社東芝 半導体装置
US8519477B2 (en) * 2009-11-20 2013-08-27 Force Mos Technology Co., Ltd. Trench MOSFET with trenched floating gates and trenched channel stop gates in termination
US8680613B2 (en) * 2012-07-30 2014-03-25 Alpha And Omega Semiconductor Incorporated Termination design for high voltage device
MX2014003783A (es) 2011-09-28 2014-05-14 Toyota Motor Co Ltd Igbt y metodo para fabricar el mismo.
WO2013080806A1 (ja) 2011-11-28 2013-06-06 富士電機株式会社 絶縁ゲート型半導体装置およびその製造方法
US8829607B1 (en) * 2013-07-25 2014-09-09 Fu-Yuan Hsieh Fast switching super-junction trench MOSFETs
JP6208579B2 (ja) * 2013-12-26 2017-10-04 トヨタ自動車株式会社 半導体装置
JP6231396B2 (ja) 2014-02-10 2017-11-15 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6472714B2 (ja) 2015-06-03 2019-02-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6728953B2 (ja) * 2015-07-16 2020-07-22 富士電機株式会社 半導体装置及びその製造方法
CN108140674B (zh) 2015-10-16 2021-02-19 三菱电机株式会社 半导体装置
DE102016112721B4 (de) 2016-07-12 2022-02-03 Infineon Technologies Ag n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen
DE102017107174B4 (de) 2017-04-04 2020-10-08 Infineon Technologies Ag IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT
JP6946824B2 (ja) * 2017-07-28 2021-10-06 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102017124872B4 (de) 2017-10-24 2021-02-18 Infineon Technologies Ag Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit
DE102017124871B4 (de) * 2017-10-24 2021-06-17 Infineon Technologies Ag Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung
WO2020078626A1 (en) 2018-10-18 2020-04-23 Abb Schweiz Ag Insulated gate power semiconductor device and method for manufacturing such device
WO2022158053A1 (ja) 2021-01-25 2022-07-28 富士電機株式会社 半導体装置

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