JP7459976B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7459976B2
JP7459976B2 JP2022576971A JP2022576971A JP7459976B2 JP 7459976 B2 JP7459976 B2 JP 7459976B2 JP 2022576971 A JP2022576971 A JP 2022576971A JP 2022576971 A JP2022576971 A JP 2022576971A JP 7459976 B2 JP7459976 B2 JP 7459976B2
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JP
Japan
Prior art keywords
region
bottom region
trench
semiconductor device
side bottom
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JP2022576971A
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English (en)
Japanese (ja)
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JPWO2022158053A1 (https=
JPWO2022158053A5 (https=
Inventor
大輔 尾崎
晴司 野口
洋輔 桜井
竜太郎 浜崎
拓弥 山田
巧裕 伊倉
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Publication of JPWO2022158053A5 publication Critical patent/JPWO2022158053A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2022576971A 2021-01-25 2021-10-04 半導体装置 Active JP7459976B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021009648 2021-01-25
JP2021009648 2021-01-25
PCT/JP2021/036687 WO2022158053A1 (ja) 2021-01-25 2021-10-04 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022158053A1 JPWO2022158053A1 (https=) 2022-07-28
JPWO2022158053A5 JPWO2022158053A5 (https=) 2023-03-16
JP7459976B2 true JP7459976B2 (ja) 2024-04-02

Family

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JP2022576971A Active JP7459976B2 (ja) 2021-01-25 2021-10-04 半導体装置

Country Status (5)

Country Link
US (1) US12575149B2 (https=)
JP (1) JP7459976B2 (https=)
CN (1) CN115769382A (https=)
DE (1) DE112021002612T5 (https=)
WO (1) WO2022158053A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022158053A1 (ja) 2021-01-25 2022-07-28 富士電機株式会社 半導体装置
JP7593511B2 (ja) * 2022-01-20 2024-12-03 富士電機株式会社 半導体装置
JP2024034141A (ja) * 2022-08-31 2024-03-13 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2025142731A1 (ja) * 2023-12-28 2025-07-03 ローム株式会社 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015098169A1 (ja) 2013-12-26 2015-07-02 トヨタ自動車株式会社 半導体装置
WO2017064887A1 (ja) 2015-10-16 2017-04-20 三菱電機株式会社 半導体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4028333B2 (ja) * 2002-09-02 2007-12-26 株式会社東芝 半導体装置
JP3934613B2 (ja) 2004-01-21 2007-06-20 株式会社東芝 半導体装置
US8519477B2 (en) * 2009-11-20 2013-08-27 Force Mos Technology Co., Ltd. Trench MOSFET with trenched floating gates and trenched channel stop gates in termination
US8680613B2 (en) * 2012-07-30 2014-03-25 Alpha And Omega Semiconductor Incorporated Termination design for high voltage device
MX2014003783A (es) 2011-09-28 2014-05-14 Toyota Motor Co Ltd Igbt y metodo para fabricar el mismo.
WO2013080806A1 (ja) 2011-11-28 2013-06-06 富士電機株式会社 絶縁ゲート型半導体装置およびその製造方法
US8829607B1 (en) * 2013-07-25 2014-09-09 Fu-Yuan Hsieh Fast switching super-junction trench MOSFETs
JP6231396B2 (ja) 2014-02-10 2017-11-15 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6472714B2 (ja) 2015-06-03 2019-02-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6728953B2 (ja) * 2015-07-16 2020-07-22 富士電機株式会社 半導体装置及びその製造方法
DE102016112721B4 (de) 2016-07-12 2022-02-03 Infineon Technologies Ag n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen
DE102017107174B4 (de) 2017-04-04 2020-10-08 Infineon Technologies Ag IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT
JP6946824B2 (ja) * 2017-07-28 2021-10-06 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102017124872B4 (de) 2017-10-24 2021-02-18 Infineon Technologies Ag Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit
DE102017124871B4 (de) * 2017-10-24 2021-06-17 Infineon Technologies Ag Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung
WO2020078626A1 (en) 2018-10-18 2020-04-23 Abb Schweiz Ag Insulated gate power semiconductor device and method for manufacturing such device
WO2022158053A1 (ja) 2021-01-25 2022-07-28 富士電機株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015098169A1 (ja) 2013-12-26 2015-07-02 トヨタ自動車株式会社 半導体装置
WO2017064887A1 (ja) 2015-10-16 2017-04-20 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
US12575149B2 (en) 2026-03-10
JPWO2022158053A1 (https=) 2022-07-28
DE112021002612T5 (de) 2023-03-16
CN115769382A (zh) 2023-03-07
WO2022158053A1 (ja) 2022-07-28
US20230124922A1 (en) 2023-04-20

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