JPWO2024166492A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2024166492A5
JPWO2024166492A5 JP2024576123A JP2024576123A JPWO2024166492A5 JP WO2024166492 A5 JPWO2024166492 A5 JP WO2024166492A5 JP 2024576123 A JP2024576123 A JP 2024576123A JP 2024576123 A JP2024576123 A JP 2024576123A JP WO2024166492 A5 JPWO2024166492 A5 JP WO2024166492A5
Authority
JP
Japan
Prior art keywords
region
contact
plug
boundary
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024576123A
Other languages
English (en)
Japanese (ja)
Other versions
JP7845515B2 (ja
JPWO2024166492A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/041808 external-priority patent/WO2024166492A1/ja
Publication of JPWO2024166492A1 publication Critical patent/JPWO2024166492A1/ja
Publication of JPWO2024166492A5 publication Critical patent/JPWO2024166492A5/ja
Application granted granted Critical
Publication of JP7845515B2 publication Critical patent/JP7845515B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2024576123A 2023-02-07 2023-11-21 半導体装置 Active JP7845515B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023016604 2023-02-07
JP2023016604 2023-02-07
PCT/JP2023/041808 WO2024166492A1 (ja) 2023-02-07 2023-11-21 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2024166492A1 JPWO2024166492A1 (https=) 2024-08-15
JPWO2024166492A5 true JPWO2024166492A5 (https=) 2025-04-17
JP7845515B2 JP7845515B2 (ja) 2026-04-14

Family

ID=92262926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024576123A Active JP7845515B2 (ja) 2023-02-07 2023-11-21 半導体装置

Country Status (5)

Country Link
US (1) US20250185334A1 (https=)
JP (1) JP7845515B2 (https=)
CN (1) CN119654982A (https=)
DE (1) DE112023002505T5 (https=)
WO (1) WO2024166492A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3843132B1 (en) * 2019-04-16 2024-11-27 Fuji Electric Co., Ltd. Semiconductor device and production method
CN114503280B (zh) * 2020-04-16 2026-04-24 富士电机株式会社 半导体装置及半导体装置的制造方法
JP7574558B2 (ja) * 2020-07-13 2024-10-29 富士電機株式会社 半導体装置
CN116348995A (zh) * 2021-05-19 2023-06-27 富士电机株式会社 半导体装置及制造方法
JP7687114B2 (ja) * 2021-07-29 2025-06-03 富士電機株式会社 半導体装置

Similar Documents

Publication Publication Date Title
CN109256417B (zh) 半导体装置
US7863685B2 (en) Trench MOSFET with embedded junction barrier Schottky diode
JP7143575B2 (ja) 半導体装置
JP5754397B2 (ja) 縦型トレンチｉｇｂｔの製造方法
US9793343B2 (en) Semiconductor device
JP7024273B2 (ja) 半導体装置
TW201635528A (zh) 半導體裝置
JP5768028B2 (ja) 半導体装置
JPWO2022239285A5 (https=)
JP2025024190A5 (https=)
JPWO2022158053A5 (https=)
JP2018006648A (ja) 半導体装置
US10930797B2 (en) Schottky barrier diode and method of manufacturing the same
JP2006173297A (ja) Ｉｇｂｔ
US20210202470A1 (en) Mosfet with integrated esd protection diode having anode electrode connection to trenched gates for increasing switch speed
JP2023179936A5 (https=)
JP6102354B2 (ja) 逆導通ｉｇｂｔ
JP2019102556A (ja) 半導体装置および半導体装置の製造方法
JPWO2022239284A5 (https=)
JP2018022836A (ja) 半導体装置
JP2021180297A5 (https=)
JP2019003966A (ja) 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US20220149190A1 (en) Semiconductor device and method for manufacture thereof
JPWO2024166492A5 (https=)
JP6088401B2 (ja) 逆導通ｉｇｂｔ