JP2021180297A5 - - Google Patents

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Publication number
JP2021180297A5
JP2021180297A5 JP2020086231A JP2020086231A JP2021180297A5 JP 2021180297 A5 JP2021180297 A5 JP 2021180297A5 JP 2020086231 A JP2020086231 A JP 2020086231A JP 2020086231 A JP2020086231 A JP 2020086231A JP 2021180297 A5 JP2021180297 A5 JP 2021180297A5
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JP
Japan
Prior art keywords
emitter
trench portion
region
contact
gate
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Application number
JP2020086231A
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English (en)
Japanese (ja)
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JP2021180297A (ja
JP7547780B2 (ja
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Priority to JP2020086231A priority Critical patent/JP7547780B2/ja
Priority claimed from JP2020086231A external-priority patent/JP7547780B2/ja
Priority to US17/210,492 priority patent/US20210359116A1/en
Publication of JP2021180297A publication Critical patent/JP2021180297A/ja
Publication of JP2021180297A5 publication Critical patent/JP2021180297A5/ja
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Publication of JP7547780B2 publication Critical patent/JP7547780B2/ja
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JP2020086231A 2020-05-15 2020-05-15 半導体装置 Active JP7547780B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020086231A JP7547780B2 (ja) 2020-05-15 2020-05-15 半導体装置
US17/210,492 US20210359116A1 (en) 2020-05-15 2021-03-23 Semiconductor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020086231A JP7547780B2 (ja) 2020-05-15 2020-05-15 半導体装置

Publications (3)

Publication Number Publication Date
JP2021180297A JP2021180297A (ja) 2021-11-18
JP2021180297A5 true JP2021180297A5 (https=) 2023-09-05
JP7547780B2 JP7547780B2 (ja) 2024-09-10

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ID=78510506

Family Applications (1)

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JP2020086231A Active JP7547780B2 (ja) 2020-05-15 2020-05-15 半導体装置

Country Status (2)

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US (1) US20210359116A1 (https=)
JP (1) JP7547780B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023113080A (ja) * 2022-02-02 2023-08-15 富士電機株式会社 半導体装置および半導体装置の製造方法
CN116759459B (zh) * 2023-08-18 2023-12-05 上海英联电子科技有限公司 功率开关管、电压转换电路及电压转换芯片
TWI905790B (zh) * 2023-09-21 2025-11-21 日商Ｔｄｋ股份有限公司 半導體裝置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5798024B2 (ja) 2011-12-13 2015-10-21 ルネサスエレクトロニクス株式会社 半導体装置
JP6064371B2 (ja) * 2012-05-30 2017-01-25 株式会社デンソー 半導体装置
DE102014119543B4 (de) 2014-12-23 2018-10-11 Infineon Technologies Ag Halbleitervorrichtung mit transistorzellen und anreicherungszellen sowie leistungsmodul
CN108463888B (zh) 2016-01-19 2021-03-26 三菱电机株式会社 半导体装置

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