JPWO2022014623A5 - - Google Patents

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Publication number
JPWO2022014623A5
JPWO2022014623A5 JP2022536411A JP2022536411A JPWO2022014623A5 JP WO2022014623 A5 JPWO2022014623 A5 JP WO2022014623A5 JP 2022536411 A JP2022536411 A JP 2022536411A JP 2022536411 A JP2022536411 A JP 2022536411A JP WO2022014623 A5 JPWO2022014623 A5 JP WO2022014623A5
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semiconductor device
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JP2022536411A
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Japanese (ja)
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JP7405261B2 (ja
JPWO2022014623A1 (https=
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Priority claimed from PCT/JP2021/026375 external-priority patent/WO2022014623A1/ja
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JP2022536411A 2020-07-15 2021-07-13 半導体装置 Active JP7405261B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020121285 2020-07-15
JP2020121285 2020-07-15
PCT/JP2021/026375 WO2022014623A1 (ja) 2020-07-15 2021-07-13 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022014623A1 JPWO2022014623A1 (https=) 2022-01-20
JPWO2022014623A5 true JPWO2022014623A5 (https=) 2022-08-23
JP7405261B2 JP7405261B2 (ja) 2023-12-26

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ID=79554672

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Application Number Title Priority Date Filing Date
JP2022536411A Active JP7405261B2 (ja) 2020-07-15 2021-07-13 半導体装置

Country Status (5)

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US (1) US12414342B2 (https=)
JP (1) JP7405261B2 (https=)
CN (1) CN114902426A (https=)
DE (1) DE112021000205T5 (https=)
WO (1) WO2022014623A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7614986B2 (ja) * 2021-09-10 2025-01-16 株式会社東芝 半導体装置
JP7796611B2 (ja) * 2022-08-23 2026-01-09 三菱電機株式会社 半導体装置、半導体装置の製造方法、および電力変換装置
JP7845270B2 (ja) * 2023-05-11 2026-04-14 株式会社デンソー 半導体装置とその製造方法
US20250254962A1 (en) * 2024-02-02 2025-08-07 Nanya Technology Corporation Semiconductor structure and method of manufacturing the same

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3523056B2 (ja) 1998-03-23 2004-04-26 株式会社東芝 半導体装置
JP3906076B2 (ja) 2001-01-31 2007-04-18 株式会社東芝 半導体装置
JP3687614B2 (ja) 2001-02-09 2005-08-24 富士電機デバイステクノロジー株式会社 半導体装置
JP3764343B2 (ja) 2001-02-28 2006-04-05 株式会社東芝 半導体装置の製造方法
US6777747B2 (en) * 2002-01-18 2004-08-17 Fairchild Semiconductor Corporation Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability
JP5034153B2 (ja) 2004-03-18 2012-09-26 富士電機株式会社 半導体素子の製造方法
US8766413B2 (en) * 2009-11-02 2014-07-01 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5488691B2 (ja) 2010-03-09 2014-05-14 富士電機株式会社 半導体装置
WO2012157772A1 (ja) 2011-05-18 2012-11-22 富士電機株式会社 半導体装置および半導体装置の製造方法
US9466689B2 (en) 2012-03-30 2016-10-11 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device and semiconductor device manufactured thereby
US9560765B2 (en) * 2013-12-06 2017-01-31 Infineon Technologies Dresden Gmbh Electronic device, a method for manufacturing an electronic device, and a method for operating an electronic device
JP6421570B2 (ja) 2013-12-20 2018-11-14 株式会社デンソー 半導体装置
DE112015000670T5 (de) 2014-09-17 2016-11-03 Fuji Electric Co., Ltd. Halbleitervorrichtungsverfahren zur Herstellung einer Halbleitervorrichtung
US10290711B2 (en) * 2015-01-27 2019-05-14 Mitsubishi Electric Corporation Semiconductor device
CN112490281B (zh) * 2015-06-17 2025-02-25 富士电机株式会社 半导体装置
DE112016001611B4 (de) 2015-09-16 2022-06-30 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
WO2017047276A1 (ja) * 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6660611B2 (ja) * 2016-01-15 2020-03-11 ローム株式会社 半導体装置および半導体装置の製造方法
WO2018135448A1 (ja) * 2017-01-17 2018-07-26 富士電機株式会社 半導体装置
DE112019001123B4 (de) * 2018-10-18 2024-03-28 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon
DE112019001738B4 (de) 2018-11-16 2024-10-10 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren
CN112219263B (zh) * 2018-11-16 2024-09-27 富士电机株式会社 半导体装置及制造方法

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