DE112021000205T5 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE112021000205T5
DE112021000205T5 DE112021000205.8T DE112021000205T DE112021000205T5 DE 112021000205 T5 DE112021000205 T5 DE 112021000205T5 DE 112021000205 T DE112021000205 T DE 112021000205T DE 112021000205 T5 DE112021000205 T5 DE 112021000205T5
Authority
DE
Germany
Prior art keywords
region
concentration
semiconductor device
peak
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021000205.8T
Other languages
German (de)
English (en)
Inventor
Yasunori Agata
Tohru SHIRAKAWA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE112021000205T5 publication Critical patent/DE112021000205T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
DE112021000205.8T 2020-07-15 2021-07-13 Halbleitervorrichtung Pending DE112021000205T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-121285 2020-07-15
JP2020121285 2020-07-15
PCT/JP2021/026375 WO2022014623A1 (ja) 2020-07-15 2021-07-13 半導体装置

Publications (1)

Publication Number Publication Date
DE112021000205T5 true DE112021000205T5 (de) 2022-08-18

Family

ID=79554672

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021000205.8T Pending DE112021000205T5 (de) 2020-07-15 2021-07-13 Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US12414342B2 (https=)
JP (1) JP7405261B2 (https=)
CN (1) CN114902426A (https=)
DE (1) DE112021000205T5 (https=)
WO (1) WO2022014623A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7614986B2 (ja) * 2021-09-10 2025-01-16 株式会社東芝 半導体装置
JP7796611B2 (ja) * 2022-08-23 2026-01-09 三菱電機株式会社 半導体装置、半導体装置の製造方法、および電力変換装置
JP7845270B2 (ja) * 2023-05-11 2026-04-14 株式会社デンソー 半導体装置とその製造方法
US20250254962A1 (en) * 2024-02-02 2025-08-07 Nanya Technology Corporation Semiconductor structure and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015135954A (ja) 2013-12-20 2015-07-27 株式会社デンソー 半導体装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3523056B2 (ja) 1998-03-23 2004-04-26 株式会社東芝 半導体装置
JP3906076B2 (ja) 2001-01-31 2007-04-18 株式会社東芝 半導体装置
JP3687614B2 (ja) 2001-02-09 2005-08-24 富士電機デバイステクノロジー株式会社 半導体装置
JP3764343B2 (ja) 2001-02-28 2006-04-05 株式会社東芝 半導体装置の製造方法
US6777747B2 (en) * 2002-01-18 2004-08-17 Fairchild Semiconductor Corporation Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability
JP5034153B2 (ja) 2004-03-18 2012-09-26 富士電機株式会社 半導体素子の製造方法
US8766413B2 (en) * 2009-11-02 2014-07-01 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5488691B2 (ja) 2010-03-09 2014-05-14 富士電機株式会社 半導体装置
WO2012157772A1 (ja) 2011-05-18 2012-11-22 富士電機株式会社 半導体装置および半導体装置の製造方法
US9466689B2 (en) 2012-03-30 2016-10-11 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device and semiconductor device manufactured thereby
US9560765B2 (en) * 2013-12-06 2017-01-31 Infineon Technologies Dresden Gmbh Electronic device, a method for manufacturing an electronic device, and a method for operating an electronic device
DE112015000670T5 (de) 2014-09-17 2016-11-03 Fuji Electric Co., Ltd. Halbleitervorrichtungsverfahren zur Herstellung einer Halbleitervorrichtung
US10290711B2 (en) * 2015-01-27 2019-05-14 Mitsubishi Electric Corporation Semiconductor device
CN112490281B (zh) * 2015-06-17 2025-02-25 富士电机株式会社 半导体装置
DE112016001611B4 (de) 2015-09-16 2022-06-30 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
WO2017047276A1 (ja) * 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6660611B2 (ja) * 2016-01-15 2020-03-11 ローム株式会社 半導体装置および半導体装置の製造方法
WO2018135448A1 (ja) * 2017-01-17 2018-07-26 富士電機株式会社 半導体装置
DE112019001123B4 (de) * 2018-10-18 2024-03-28 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon
DE112019001738B4 (de) 2018-11-16 2024-10-10 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren
CN112219263B (zh) * 2018-11-16 2024-09-27 富士电机株式会社 半导体装置及制造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015135954A (ja) 2013-12-20 2015-07-27 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
WO2022014623A1 (ja) 2022-01-20
JP7405261B2 (ja) 2023-12-26
JPWO2022014623A1 (https=) 2022-01-20
CN114902426A (zh) 2022-08-12
US20220320288A1 (en) 2022-10-06
US12414342B2 (en) 2025-09-09

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