JPWO2025028616A5 - - Google Patents

Info

Publication number
JPWO2025028616A5
JPWO2025028616A5 JP2025537510A JP2025537510A JPWO2025028616A5 JP WO2025028616 A5 JPWO2025028616 A5 JP WO2025028616A5 JP 2025537510 A JP2025537510 A JP 2025537510A JP 2025537510 A JP2025537510 A JP 2025537510A JP WO2025028616 A5 JPWO2025028616 A5 JP WO2025028616A5
Authority
JP
Japan
Prior art keywords
region
main surface
semiconductor device
semiconductor
termination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025537510A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025028616A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/027558 external-priority patent/WO2025028616A1/ja
Publication of JPWO2025028616A1 publication Critical patent/JPWO2025028616A1/ja
Publication of JPWO2025028616A5 publication Critical patent/JPWO2025028616A5/ja
Pending legal-status Critical Current

Links

JP2025537510A 2023-08-03 2024-08-01 Pending JPWO2025028616A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023126932 2023-08-03
PCT/JP2024/027558 WO2025028616A1 (ja) 2023-08-03 2024-08-01 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2025028616A1 JPWO2025028616A1 (https=) 2025-02-06
JPWO2025028616A5 true JPWO2025028616A5 (https=) 2026-05-07

Family

ID=94395337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025537510A Pending JPWO2025028616A1 (https=) 2023-08-03 2024-08-01

Country Status (2)

Country Link
JP (1) JPWO2025028616A1 (https=)
WO (1) WO2025028616A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014232838A (ja) * 2013-05-30 2014-12-11 住友電気工業株式会社 炭化珪素半導体装置
JP6855700B2 (ja) * 2016-08-05 2021-04-07 富士電機株式会社 半導体装置およびその製造方法
JP6870546B2 (ja) * 2017-09-14 2021-05-12 株式会社デンソー 半導体装置およびその製造方法
JP7524527B2 (ja) * 2019-04-12 2024-07-30 富士電機株式会社 超接合半導体装置および超接合半導体装置の製造方法
JP7593225B2 (ja) * 2021-05-14 2024-12-03 株式会社デンソー 炭化珪素半導体装置
JP7647452B2 (ja) * 2021-08-31 2025-03-18 株式会社デンソー 半導体装置およびその製造方法
JP7722177B2 (ja) * 2021-12-24 2025-08-13 株式会社デンソー 半導体装置

Similar Documents

Publication Publication Date Title
JP7804817B2 (ja) 半導体装置
US10978580B2 (en) Insulated gate bipolar transistor and diode
CN110663118A (zh) 半导体装置
JP2021174924A5 (https=)
CN104247025A (zh) 具有高发射极栅极电容的绝缘栅双极晶体管
JPWO2023189059A5 (https=)
JP2022009745A5 (https=)
JP2025113483A5 (https=)
JPWO2023157422A5 (https=)
JP2023053145A (ja) Rc-igbt半導体装置
JPWO2024014362A5 (https=)
JPWO2025028616A5 (https=)
JPWO2024101131A5 (https=)
JPWO2023189754A5 (https=)
JPWO2025028615A5 (https=)
JPWO2024195460A5 (https=)
JPH11330469A (ja) 絶縁ゲート型半導体装置
JPWO2023167161A5 (https=)
JP2024157636A (ja) 半導体装置
JPWO2023243556A5 (https=)
KR20150067509A (ko) 반도체 전력 소자 및 그 제조 방법
JPWO2024150368A5 (https=)
JPWO2022070304A5 (https=)
JPWO2024204491A5 (https=)
WO2023223589A1 (ja) 半導体チップ