JPWO2024204491A5 - - Google Patents

Info

Publication number
JPWO2024204491A5
JPWO2024204491A5 JP2025511112A JP2025511112A JPWO2024204491A5 JP WO2024204491 A5 JPWO2024204491 A5 JP WO2024204491A5 JP 2025511112 A JP2025511112 A JP 2025511112A JP 2025511112 A JP2025511112 A JP 2025511112A JP WO2024204491 A5 JPWO2024204491 A5 JP WO2024204491A5
Authority
JP
Japan
Prior art keywords
region
concentration region
semiconductor device
conductivity type
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025511112A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024204491A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/012558 external-priority patent/WO2024204491A1/ja
Publication of JPWO2024204491A1 publication Critical patent/JPWO2024204491A1/ja
Publication of JPWO2024204491A5 publication Critical patent/JPWO2024204491A5/ja
Pending legal-status Critical Current

Links

JP2025511112A 2023-03-30 2024-03-28 Pending JPWO2024204491A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023056618 2023-03-30
PCT/JP2024/012558 WO2024204491A1 (ja) 2023-03-30 2024-03-28 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024204491A1 JPWO2024204491A1 (https=) 2024-10-03
JPWO2024204491A5 true JPWO2024204491A5 (https=) 2026-01-07

Family

ID=92905810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025511112A Pending JPWO2024204491A1 (https=) 2023-03-30 2024-03-28

Country Status (5)

Country Link
US (1) US20260032990A1 (https=)
JP (1) JPWO2024204491A1 (https=)
CN (1) CN120937525A (https=)
DE (1) DE112024001515T5 (https=)
WO (1) WO2024204491A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4125864B2 (ja) * 2000-10-30 2008-07-30 新電元工業株式会社 電界効果トランジスタ
JP4294016B2 (ja) * 2005-09-21 2009-07-08 新電元工業株式会社 半導体デバイスの製造方法
JP2013069784A (ja) * 2011-09-21 2013-04-18 Toshiba Corp 電力用半導体装置
JP6786824B2 (ja) * 2016-03-14 2020-11-18 富士電機株式会社 半導体装置及びその製造方法
JP7447415B2 (ja) * 2019-09-26 2024-03-12 富士電機株式会社 窒化ガリウム半導体装置

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