JP2025113483A5 - - Google Patents

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Publication number
JP2025113483A5
JP2025113483A5 JP2025090369A JP2025090369A JP2025113483A5 JP 2025113483 A5 JP2025113483 A5 JP 2025113483A5 JP 2025090369 A JP2025090369 A JP 2025090369A JP 2025090369 A JP2025090369 A JP 2025090369A JP 2025113483 A5 JP2025113483 A5 JP 2025113483A5
Authority
JP
Japan
Prior art keywords
region
silicon carbide
conductivity type
type impurity
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2025090369A
Other languages
English (en)
Japanese (ja)
Other versions
JP7852123B2 (ja
JP2025113483A (ja
Filing date
Publication date
Priority claimed from JP2022045801A external-priority patent/JP7691393B2/ja
Application filed filed Critical
Priority to JP2025090369A priority Critical patent/JP7852123B2/ja
Publication of JP2025113483A publication Critical patent/JP2025113483A/ja
Publication of JP2025113483A5 publication Critical patent/JP2025113483A5/ja
Application granted granted Critical
Publication of JP7852123B2 publication Critical patent/JP7852123B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2025090369A 2022-03-22 2025-05-30 半導体装置 Active JP7852123B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025090369A JP7852123B2 (ja) 2022-03-22 2025-05-30 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022045801A JP7691393B2 (ja) 2022-03-22 2022-03-22 半導体装置
JP2025090369A JP7852123B2 (ja) 2022-03-22 2025-05-30 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2022045801A Division JP7691393B2 (ja) 2022-03-22 2022-03-22 半導体装置

Publications (3)

Publication Number Publication Date
JP2025113483A JP2025113483A (ja) 2025-08-01
JP2025113483A5 true JP2025113483A5 (https=) 2025-10-16
JP7852123B2 JP7852123B2 (ja) 2026-04-27

Family

ID=83507430

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022045801A Active JP7691393B2 (ja) 2022-03-22 2022-03-22 半導体装置
JP2025090369A Active JP7852123B2 (ja) 2022-03-22 2025-05-30 半導体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2022045801A Active JP7691393B2 (ja) 2022-03-22 2022-03-22 半導体装置

Country Status (4)

Country Link
US (1) US12464794B2 (https=)
EP (1) EP4250371A1 (https=)
JP (2) JP7691393B2 (https=)
CN (1) CN116825840A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024137537A (ja) * 2023-03-24 2024-10-07 株式会社東芝 半導体装置
US20250113531A1 (en) * 2023-09-28 2025-04-03 Wolfspeed, Inc. Power silicon carbide based semiconductor devices with selective jfet implants that are self-aligned with the well regions and methods of making such devices

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3656744B2 (ja) 2001-11-21 2005-06-08 株式会社デンソー 半導体装置
AU2003275541A1 (en) 2002-10-18 2004-05-04 National Institute Of Advanced Industrial Science And Technology Silicon carbide semiconductor device and its manufacturing method
JP4903439B2 (ja) 2005-05-31 2012-03-28 株式会社東芝 電界効果トランジスタ
JP5789928B2 (ja) * 2010-08-02 2015-10-07 富士電機株式会社 Mos型半導体装置およびその製造方法
JP5597217B2 (ja) 2012-02-29 2014-10-01 株式会社東芝 半導体装置及びその製造方法
JP2014146738A (ja) 2013-01-30 2014-08-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
CN104584221B (zh) 2013-02-13 2017-04-19 富士电机株式会社 半导体装置
JP6183087B2 (ja) 2013-09-13 2017-08-23 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP6666224B2 (ja) * 2016-09-21 2020-03-13 株式会社東芝 半導体装置
JP6926869B2 (ja) 2017-09-13 2021-08-25 富士電機株式会社 半導体装置
JP7078226B2 (ja) 2018-07-19 2022-05-31 国立研究開発法人産業技術総合研究所 半導体装置
JP7003019B2 (ja) * 2018-09-15 2022-01-20 株式会社東芝 半導体装置
JP7214508B2 (ja) * 2019-03-01 2023-01-30 株式会社東芝 半導体装置
WO2020184338A1 (ja) 2019-03-08 2020-09-17 株式会社新川 ワイヤボンディング装置
JP6737379B2 (ja) 2019-05-31 2020-08-05 富士電機株式会社 半導体装置
JP7439422B2 (ja) 2019-09-06 2024-02-28 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7362546B2 (ja) 2020-05-14 2023-10-17 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP7593225B2 (ja) * 2021-05-14 2024-12-03 株式会社デンソー 炭化珪素半導体装置

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