JPWO2023171139A5 - - Google Patents

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Publication number
JPWO2023171139A5
JPWO2023171139A5 JP2024505929A JP2024505929A JPWO2023171139A5 JP WO2023171139 A5 JPWO2023171139 A5 JP WO2023171139A5 JP 2024505929 A JP2024505929 A JP 2024505929A JP 2024505929 A JP2024505929 A JP 2024505929A JP WO2023171139 A5 JPWO2023171139 A5 JP WO2023171139A5
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JP
Japan
Prior art keywords
region
gate
gate region
bottom gate
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024505929A
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English (en)
Japanese (ja)
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JPWO2023171139A1 (https=
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/001366 external-priority patent/WO2023171139A1/ja
Publication of JPWO2023171139A1 publication Critical patent/JPWO2023171139A1/ja
Publication of JPWO2023171139A5 publication Critical patent/JPWO2023171139A5/ja
Pending legal-status Critical Current

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JP2024505929A 2022-03-10 2023-01-18 Pending JPWO2023171139A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022037592 2022-03-10
PCT/JP2023/001366 WO2023171139A1 (ja) 2022-03-10 2023-01-18 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023171139A1 JPWO2023171139A1 (https=) 2023-09-14
JPWO2023171139A5 true JPWO2023171139A5 (https=) 2024-11-15

Family

ID=87936657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024505929A Pending JPWO2023171139A1 (https=) 2022-03-10 2023-01-18

Country Status (3)

Country Link
US (1) US20240405074A1 (https=)
JP (1) JPWO2023171139A1 (https=)
WO (1) WO2023171139A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250048665A1 (en) * 2023-08-03 2025-02-06 Globalfoundries Singapore Pte Ltd. Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01127262U (https=) * 1988-02-23 1989-08-31
JPH10209174A (ja) * 1997-01-27 1998-08-07 Nikon Corp 接合型電界効果トランジスタ
JP2000138233A (ja) * 1998-10-29 2000-05-16 Nec Yamagata Ltd 接合型電界効果トランジスタ及びその製造方法
US8462477B2 (en) * 2010-09-13 2013-06-11 Analog Devices, Inc. Junction field effect transistor for voltage protection
CN104201208B (zh) * 2014-08-26 2016-11-30 电子科技大学 一种恒流jfet器件及其制造方法

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