JPWO2023008308A5 - - Google Patents
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- Publication number
- JPWO2023008308A5 JPWO2023008308A5 JP2023538480A JP2023538480A JPWO2023008308A5 JP WO2023008308 A5 JPWO2023008308 A5 JP WO2023008308A5 JP 2023538480 A JP2023538480 A JP 2023538480A JP 2023538480 A JP2023538480 A JP 2023538480A JP WO2023008308 A5 JPWO2023008308 A5 JP WO2023008308A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier layer
- semiconductor device
- electrode
- field plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims 29
- 150000004767 nitrides Chemical class 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 8
- 239000000463 material Substances 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021122144 | 2021-07-27 | ||
| JP2021122144 | 2021-07-27 | ||
| PCT/JP2022/028359 WO2023008308A1 (ja) | 2021-07-27 | 2022-07-21 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023008308A1 JPWO2023008308A1 (https=) | 2023-02-02 |
| JPWO2023008308A5 true JPWO2023008308A5 (https=) | 2024-01-04 |
| JP7448728B2 JP7448728B2 (ja) | 2024-03-12 |
Family
ID=85086926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023538480A Active JP7448728B2 (ja) | 2021-07-27 | 2022-07-21 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12142677B2 (https=) |
| EP (1) | EP4379810B1 (https=) |
| JP (1) | JP7448728B2 (https=) |
| CN (1) | CN117769762B (https=) |
| TW (1) | TWI847197B (https=) |
| WO (1) | WO2023008308A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114127954B (zh) * | 2021-08-11 | 2023-07-07 | 英诺赛科(苏州)科技有限公司 | 半导体装置及其制造方法 |
| JP7740799B2 (ja) * | 2021-09-27 | 2025-09-17 | 住友電工デバイス・イノベーション株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2024030125A (ja) * | 2022-08-23 | 2024-03-07 | 住友電気工業株式会社 | 半導体装置および半導体装置の製造方法 |
| US12408365B2 (en) * | 2022-11-28 | 2025-09-02 | Nxp Usa, Inc. | Heterostructure transistor gate with diffusion barrier |
| TWI905579B (zh) * | 2023-11-28 | 2025-11-21 | 台亞半導體股份有限公司 | 半導體結構 |
| TWI905641B (zh) * | 2024-01-23 | 2025-11-21 | 新唐科技股份有限公司 | 半導體裝置及其形成方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4221697B2 (ja) | 2002-06-17 | 2009-02-12 | 日本電気株式会社 | 半導体装置 |
| JP4547933B2 (ja) * | 2003-02-19 | 2010-09-22 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP4841844B2 (ja) | 2005-01-05 | 2011-12-21 | 三菱電機株式会社 | 半導体素子 |
| JP4866007B2 (ja) | 2005-01-14 | 2012-02-01 | 富士通株式会社 | 化合物半導体装置 |
| US7973304B2 (en) * | 2007-02-06 | 2011-07-05 | International Rectifier Corporation | III-nitride semiconductor device |
| JP2008277640A (ja) * | 2007-05-02 | 2008-11-13 | Toshiba Corp | 窒化物半導体素子 |
| JP2008305816A (ja) * | 2007-06-05 | 2008-12-18 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| WO2009012536A1 (en) | 2007-07-20 | 2009-01-29 | Interuniversitair Microelektronica Centrum | Damascene contacts on iii-v cmos devices |
| WO2010118087A1 (en) | 2009-04-08 | 2010-10-14 | Efficient Power Conversion Corporation | Enhancement mode gan hemt device and method for fabricating the same |
| JP2013149851A (ja) * | 2012-01-20 | 2013-08-01 | Sharp Corp | 窒化物半導体装置 |
| JP5662367B2 (ja) | 2012-03-26 | 2015-01-28 | 株式会社東芝 | 窒化物半導体装置およびその製造方法 |
| JP2014072388A (ja) * | 2012-09-28 | 2014-04-21 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
| US8900985B2 (en) * | 2012-10-15 | 2014-12-02 | Infineon Technologies Austria Ag | Self-doped ohmic contacts for compound semiconductor devices |
| JP2014099523A (ja) * | 2012-11-15 | 2014-05-29 | Mitsubishi Electric Corp | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
| US9422621B2 (en) * | 2013-10-30 | 2016-08-23 | Skyworks Solutions, Inc. | Refractory metal barrier in semiconductor devices |
| CN106663634B (zh) * | 2015-03-30 | 2021-07-23 | 瑞萨电子株式会社 | 半导体器件及半导体器件的制造方法 |
| JP6650867B2 (ja) * | 2016-12-22 | 2020-02-19 | 三菱電機株式会社 | ヘテロ接合電界効果型トランジスタの製造方法 |
| TWI681561B (zh) * | 2017-05-23 | 2020-01-01 | 財團法人工業技術研究院 | 氮化鎵電晶體元件之結構及其製造方法 |
| US10355045B1 (en) * | 2017-12-29 | 2019-07-16 | Spin Memory, Inc. | Three dimensional perpendicular magnetic junction with thin-film transistor |
| IT201800007920A1 (it) * | 2018-08-07 | 2020-02-07 | St Microelectronics Srl | Metodo di fabbricazione di un dispositivo hemt con ridotta corrente di perdita di gate, e dispositivo hemt |
-
2022
- 2022-07-21 US US18/578,607 patent/US12142677B2/en active Active
- 2022-07-21 WO PCT/JP2022/028359 patent/WO2023008308A1/ja not_active Ceased
- 2022-07-21 CN CN202280051723.7A patent/CN117769762B/zh active Active
- 2022-07-21 EP EP22849370.6A patent/EP4379810B1/en active Active
- 2022-07-21 JP JP2023538480A patent/JP7448728B2/ja active Active
- 2022-07-22 TW TW111127569A patent/TWI847197B/zh active
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