JP7448728B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7448728B2
JP7448728B2 JP2023538480A JP2023538480A JP7448728B2 JP 7448728 B2 JP7448728 B2 JP 7448728B2 JP 2023538480 A JP2023538480 A JP 2023538480A JP 2023538480 A JP2023538480 A JP 2023538480A JP 7448728 B2 JP7448728 B2 JP 7448728B2
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layer
barrier layer
electrode
semiconductor device
field plate
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JPWO2023008308A1 (https=
JPWO2023008308A5 (https=
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裕介 神田
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2023538480A 2021-07-27 2022-07-21 半導体装置 Active JP7448728B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021122144 2021-07-27
JP2021122144 2021-07-27
PCT/JP2022/028359 WO2023008308A1 (ja) 2021-07-27 2022-07-21 半導体装置

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JPWO2023008308A1 JPWO2023008308A1 (https=) 2023-02-02
JPWO2023008308A5 JPWO2023008308A5 (https=) 2024-01-04
JP7448728B2 true JP7448728B2 (ja) 2024-03-12

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US (1) US12142677B2 (https=)
EP (1) EP4379810B1 (https=)
JP (1) JP7448728B2 (https=)
CN (1) CN117769762B (https=)
TW (1) TWI847197B (https=)
WO (1) WO2023008308A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114127954B (zh) * 2021-08-11 2023-07-07 英诺赛科(苏州)科技有限公司 半导体装置及其制造方法
JP7740799B2 (ja) * 2021-09-27 2025-09-17 住友電工デバイス・イノベーション株式会社 半導体装置及び半導体装置の製造方法
JP2024030125A (ja) * 2022-08-23 2024-03-07 住友電気工業株式会社 半導体装置および半導体装置の製造方法
US12408365B2 (en) * 2022-11-28 2025-09-02 Nxp Usa, Inc. Heterostructure transistor gate with diffusion barrier
TWI905579B (zh) * 2023-11-28 2025-11-21 台亞半導體股份有限公司 半導體結構
TWI905641B (zh) * 2024-01-23 2025-11-21 新唐科技股份有限公司 半導體裝置及其形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517302A (ja) 2007-02-06 2010-05-20 インターナショナル レクティフィアー コーポレイション Ｉｉｉ族窒化物半導体デバイス
JP2010533987A (ja) 2007-07-20 2010-10-28 アイメック Ｉｉｉ−ｖ族ｃｍｏｓデバイスでのダマシンコンタクト
JP2012523697A (ja) 2009-04-08 2012-10-04 エフィシエント パワー コンヴァーション コーポレーション エンハンスメントモードＧａＮＨＥＭＴデバイス、及びその製造方法
US20140106516A1 (en) 2012-10-15 2014-04-17 Infineon Technologies Austria Ag Self-doped ohmic contacts for compound semiconductor devices
US20200051823A1 (en) 2018-08-07 2020-02-13 Stimicroelectronics S.R.L. Method of manufacturing a hemt device with reduced gate leakage current, and hemt device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4221697B2 (ja) 2002-06-17 2009-02-12 日本電気株式会社 半導体装置
JP4547933B2 (ja) * 2003-02-19 2010-09-22 日亜化学工業株式会社 窒化物半導体素子
JP4841844B2 (ja) 2005-01-05 2011-12-21 三菱電機株式会社 半導体素子
JP4866007B2 (ja) 2005-01-14 2012-02-01 富士通株式会社 化合物半導体装置
JP2008277640A (ja) * 2007-05-02 2008-11-13 Toshiba Corp 窒化物半導体素子
JP2008305816A (ja) * 2007-06-05 2008-12-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2013149851A (ja) * 2012-01-20 2013-08-01 Sharp Corp 窒化物半導体装置
JP5662367B2 (ja) 2012-03-26 2015-01-28 株式会社東芝 窒化物半導体装置およびその製造方法
JP2014072388A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2014099523A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp ヘテロ接合電界効果型トランジスタおよびその製造方法
US9422621B2 (en) * 2013-10-30 2016-08-23 Skyworks Solutions, Inc. Refractory metal barrier in semiconductor devices
CN106663634B (zh) * 2015-03-30 2021-07-23 瑞萨电子株式会社 半导体器件及半导体器件的制造方法
JP6650867B2 (ja) * 2016-12-22 2020-02-19 三菱電機株式会社 ヘテロ接合電界効果型トランジスタの製造方法
TWI681561B (zh) * 2017-05-23 2020-01-01 財團法人工業技術研究院 氮化鎵電晶體元件之結構及其製造方法
US10355045B1 (en) * 2017-12-29 2019-07-16 Spin Memory, Inc. Three dimensional perpendicular magnetic junction with thin-film transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517302A (ja) 2007-02-06 2010-05-20 インターナショナル レクティフィアー コーポレイション Ｉｉｉ族窒化物半導体デバイス
JP2010533987A (ja) 2007-07-20 2010-10-28 アイメック Ｉｉｉ−ｖ族ｃｍｏｓデバイスでのダマシンコンタクト
JP2012523697A (ja) 2009-04-08 2012-10-04 エフィシエント パワー コンヴァーション コーポレーション エンハンスメントモードＧａＮＨＥＭＴデバイス、及びその製造方法
US20140106516A1 (en) 2012-10-15 2014-04-17 Infineon Technologies Austria Ag Self-doped ohmic contacts for compound semiconductor devices
US20200051823A1 (en) 2018-08-07 2020-02-13 Stimicroelectronics S.R.L. Method of manufacturing a hemt device with reduced gate leakage current, and hemt device

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JPWO2023008308A1 (https=) 2023-02-02
WO2023008308A1 (ja) 2023-02-02
US12142677B2 (en) 2024-11-12
EP4379810B1 (en) 2026-04-08
EP4379810A1 (en) 2024-06-05
US20240266428A1 (en) 2024-08-08
CN117769762B (zh) 2024-10-18
EP4379810A4 (en) 2024-09-04
TW202306173A (zh) 2023-02-01
CN117769762A (zh) 2024-03-26
TWI847197B (zh) 2024-07-01

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