JPWO2022176455A5 - - Google Patents

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JPWO2022176455A5
JPWO2022176455A5 JP2023500627A JP2023500627A JPWO2022176455A5 JP WO2022176455 A5 JPWO2022176455 A5 JP WO2022176455A5 JP 2023500627 A JP2023500627 A JP 2023500627A JP 2023500627 A JP2023500627 A JP 2023500627A JP WO2022176455 A5 JPWO2022176455 A5 JP WO2022176455A5
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JP
Japan
Prior art keywords
semiconductor device
nitride semiconductor
layer
semiconductor layer
groove
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JP2023500627A
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English (en)
Japanese (ja)
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JPWO2022176455A1 (https=
JP7813766B2 (ja
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Priority claimed from PCT/JP2022/000941 external-priority patent/WO2022176455A1/ja
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Publication of JPWO2022176455A5 publication Critical patent/JPWO2022176455A5/ja
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JP2023500627A 2021-02-16 2022-01-13 窒化物半導体デバイス Active JP7813766B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021022353 2021-02-16
JP2021022353 2021-02-16
PCT/JP2022/000941 WO2022176455A1 (ja) 2021-02-16 2022-01-13 窒化物半導体デバイス

Publications (3)

Publication Number Publication Date
JPWO2022176455A1 JPWO2022176455A1 (https=) 2022-08-25
JPWO2022176455A5 true JPWO2022176455A5 (https=) 2025-01-10
JP7813766B2 JP7813766B2 (ja) 2026-02-13

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JP2023500627A Active JP7813766B2 (ja) 2021-02-16 2022-01-13 窒化物半導体デバイス

Country Status (3)

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US (1) US20230387286A1 (https=)
JP (1) JP7813766B2 (https=)
WO (1) WO2022176455A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115810663B (zh) 2021-09-14 2026-04-03 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
JPWO2024116612A1 (https=) * 2022-11-30 2024-06-06
WO2024116739A1 (ja) * 2022-12-01 2024-06-06 パナソニックホールディングス株式会社 窒化物半導体デバイスおよびその製造方法
WO2026048168A1 (ja) * 2024-08-27 2026-03-05 パナソニックホールディングス株式会社 窒化物半導体デバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921699B2 (en) * 2002-09-30 2005-07-26 International Rectifier Corporation Method for manufacturing a semiconductor device with a trench termination
JP2009117820A (ja) * 2007-10-16 2009-05-28 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法
JP5144326B2 (ja) * 2008-03-21 2013-02-13 古河電気工業株式会社 電界効果トランジスタ
JP2010135640A (ja) * 2008-12-05 2010-06-17 Panasonic Corp 電界効果トランジスタ
JP5658545B2 (ja) * 2010-11-30 2015-01-28 株式会社豊田中央研究所 Ｉｉｉ族窒化物半導体装置
CN103620751B (zh) * 2011-07-12 2017-08-01 松下知识产权经营株式会社 氮化物半导体装置及其制造方法
JP5724945B2 (ja) * 2012-05-18 2015-05-27 株式会社デンソー 炭化珪素半導体装置の製造方法
JP6754782B2 (ja) * 2016-02-12 2020-09-16 パナソニック株式会社 半導体装置
JP6524950B2 (ja) * 2016-03-29 2019-06-05 豊田合成株式会社 半導体装置およびその製造方法
WO2019187789A1 (ja) * 2018-03-27 2019-10-03 パナソニック株式会社 窒化物半導体装置
WO2020137303A1 (ja) * 2018-12-27 2020-07-02 パナソニック株式会社 窒化物半導体装置
CN113130650B (zh) * 2020-01-13 2022-08-09 清纯半导体(上海)有限公司 功率半导体器件及其制备工艺

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