JP7813766B2 - 窒化物半導体デバイス - Google Patents

窒化物半導体デバイス

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Publication number
JP7813766B2
JP7813766B2 JP2023500627A JP2023500627A JP7813766B2 JP 7813766 B2 JP7813766 B2 JP 7813766B2 JP 2023500627 A JP2023500627 A JP 2023500627A JP 2023500627 A JP2023500627 A JP 2023500627A JP 7813766 B2 JP7813766 B2 JP 7813766B2
Authority
JP
Japan
Prior art keywords
layer
nitride semiconductor
semiconductor device
substrate
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023500627A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022176455A5 (https=
JPWO2022176455A1 (https=
Inventor
大輔 柴田
聡之 田村
学 柳原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Publication of JPWO2022176455A1 publication Critical patent/JPWO2022176455A1/ja
Publication of JPWO2022176455A5 publication Critical patent/JPWO2022176455A5/ja
Application granted granted Critical
Publication of JP7813766B2 publication Critical patent/JP7813766B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/477—Vertical HEMTs or vertical HHMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP2023500627A 2021-02-16 2022-01-13 窒化物半導体デバイス Active JP7813766B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021022353 2021-02-16
JP2021022353 2021-02-16
PCT/JP2022/000941 WO2022176455A1 (ja) 2021-02-16 2022-01-13 窒化物半導体デバイス

Publications (3)

Publication Number Publication Date
JPWO2022176455A1 JPWO2022176455A1 (https=) 2022-08-25
JPWO2022176455A5 JPWO2022176455A5 (https=) 2025-01-10
JP7813766B2 true JP7813766B2 (ja) 2026-02-13

Family

ID=82930778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023500627A Active JP7813766B2 (ja) 2021-02-16 2022-01-13 窒化物半導体デバイス

Country Status (3)

Country Link
US (1) US20230387286A1 (https=)
JP (1) JP7813766B2 (https=)
WO (1) WO2022176455A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115810663B (zh) 2021-09-14 2026-04-03 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
JPWO2024116612A1 (https=) * 2022-11-30 2024-06-06
WO2024116739A1 (ja) * 2022-12-01 2024-06-06 パナソニックホールディングス株式会社 窒化物半導体デバイスおよびその製造方法
WO2026048168A1 (ja) * 2024-08-27 2026-03-05 パナソニックホールディングス株式会社 窒化物半導体デバイス

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509350A (ja) 2002-09-30 2006-03-16 インターナショナル レクティファイアー コーポレイション 半導体装置の製造方法
JP2009117820A (ja) 2007-10-16 2009-05-28 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法
JP2009231458A (ja) 2008-03-21 2009-10-08 Furukawa Electric Co Ltd:The 電界効果トランジスタ
JP2010135640A (ja) 2008-12-05 2010-06-17 Panasonic Corp 電界効果トランジスタ
JP2012119435A (ja) 2010-11-30 2012-06-21 Toyota Central R&D Labs Inc Ｉｉｉ族窒化物半導体装置
WO2013008422A1 (ja) 2011-07-12 2013-01-17 パナソニック株式会社 窒化物半導体装置およびその製造方法
JP2013243213A (ja) 2012-05-18 2013-12-05 Denso Corp 炭化珪素半導体装置の製造方法
WO2017138505A1 (ja) 2016-02-12 2017-08-17 パナソニック株式会社 半導体装置
JP2017183428A (ja) 2016-03-29 2017-10-05 豊田合成株式会社 半導体装置およびその製造方法
WO2019187789A1 (ja) 2018-03-27 2019-10-03 パナソニック株式会社 窒化物半導体装置
WO2020137303A1 (ja) 2018-12-27 2020-07-02 パナソニック株式会社 窒化物半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113130650B (zh) * 2020-01-13 2022-08-09 清纯半导体(上海)有限公司 功率半导体器件及其制备工艺

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509350A (ja) 2002-09-30 2006-03-16 インターナショナル レクティファイアー コーポレイション 半導体装置の製造方法
JP2009117820A (ja) 2007-10-16 2009-05-28 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法
JP2009231458A (ja) 2008-03-21 2009-10-08 Furukawa Electric Co Ltd:The 電界効果トランジスタ
JP2010135640A (ja) 2008-12-05 2010-06-17 Panasonic Corp 電界効果トランジスタ
JP2012119435A (ja) 2010-11-30 2012-06-21 Toyota Central R&D Labs Inc Ｉｉｉ族窒化物半導体装置
WO2013008422A1 (ja) 2011-07-12 2013-01-17 パナソニック株式会社 窒化物半導体装置およびその製造方法
JP2013243213A (ja) 2012-05-18 2013-12-05 Denso Corp 炭化珪素半導体装置の製造方法
WO2017138505A1 (ja) 2016-02-12 2017-08-17 パナソニック株式会社 半導体装置
JP2017183428A (ja) 2016-03-29 2017-10-05 豊田合成株式会社 半導体装置およびその製造方法
WO2019187789A1 (ja) 2018-03-27 2019-10-03 パナソニック株式会社 窒化物半導体装置
WO2020137303A1 (ja) 2018-12-27 2020-07-02 パナソニック株式会社 窒化物半導体装置

Also Published As

Publication number Publication date
WO2022176455A1 (ja) 2022-08-25
JPWO2022176455A1 (https=) 2022-08-25
US20230387286A1 (en) 2023-11-30

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