JPWO2022176455A1 - - Google Patents

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Publication number
JPWO2022176455A1
JPWO2022176455A1 JP2023500627A JP2023500627A JPWO2022176455A1 JP WO2022176455 A1 JPWO2022176455 A1 JP WO2022176455A1 JP 2023500627 A JP2023500627 A JP 2023500627A JP 2023500627 A JP2023500627 A JP 2023500627A JP WO2022176455 A1 JPWO2022176455 A1 JP WO2022176455A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023500627A
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Japanese (ja)
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JPWO2022176455A5 (https=
JP7813766B2 (ja
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Publication of JPWO2022176455A1 publication Critical patent/JPWO2022176455A1/ja
Publication of JPWO2022176455A5 publication Critical patent/JPWO2022176455A5/ja
Application granted granted Critical
Publication of JP7813766B2 publication Critical patent/JP7813766B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/477—Vertical HEMTs or vertical HHMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
JP2023500627A 2021-02-16 2022-01-13 窒化物半導体デバイス Active JP7813766B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021022353 2021-02-16
JP2021022353 2021-02-16
PCT/JP2022/000941 WO2022176455A1 (ja) 2021-02-16 2022-01-13 窒化物半導体デバイス

Publications (3)

Publication Number Publication Date
JPWO2022176455A1 true JPWO2022176455A1 (https=) 2022-08-25
JPWO2022176455A5 JPWO2022176455A5 (https=) 2025-01-10
JP7813766B2 JP7813766B2 (ja) 2026-02-13

Family

ID=82930778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023500627A Active JP7813766B2 (ja) 2021-02-16 2022-01-13 窒化物半導体デバイス

Country Status (3)

Country Link
US (1) US20230387286A1 (https=)
JP (1) JP7813766B2 (https=)
WO (1) WO2022176455A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115810663B (zh) 2021-09-14 2026-04-03 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
JPWO2024116612A1 (https=) * 2022-11-30 2024-06-06
WO2024116739A1 (ja) * 2022-12-01 2024-06-06 パナソニックホールディングス株式会社 窒化物半導体デバイスおよびその製造方法
WO2026048168A1 (ja) * 2024-08-27 2026-03-05 パナソニックホールディングス株式会社 窒化物半導体デバイス

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509350A (ja) * 2002-09-30 2006-03-16 インターナショナル レクティファイアー コーポレイション 半導体装置の製造方法
JP2009117820A (ja) * 2007-10-16 2009-05-28 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法
JP2009231458A (ja) * 2008-03-21 2009-10-08 Furukawa Electric Co Ltd:The 電界効果トランジスタ
JP2010135640A (ja) * 2008-12-05 2010-06-17 Panasonic Corp 電界効果トランジスタ
JP2012119435A (ja) * 2010-11-30 2012-06-21 Toyota Central R&D Labs Inc Ｉｉｉ族窒化物半導体装置
WO2013008422A1 (ja) * 2011-07-12 2013-01-17 パナソニック株式会社 窒化物半導体装置およびその製造方法
JP2013243213A (ja) * 2012-05-18 2013-12-05 Denso Corp 炭化珪素半導体装置の製造方法
WO2017138505A1 (ja) * 2016-02-12 2017-08-17 パナソニック株式会社 半導体装置
JP2017183428A (ja) * 2016-03-29 2017-10-05 豊田合成株式会社 半導体装置およびその製造方法
WO2019187789A1 (ja) * 2018-03-27 2019-10-03 パナソニック株式会社 窒化物半導体装置
WO2020137303A1 (ja) * 2018-12-27 2020-07-02 パナソニック株式会社 窒化物半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113130650B (zh) * 2020-01-13 2022-08-09 清纯半导体(上海)有限公司 功率半导体器件及其制备工艺

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509350A (ja) * 2002-09-30 2006-03-16 インターナショナル レクティファイアー コーポレイション 半導体装置の製造方法
JP2009117820A (ja) * 2007-10-16 2009-05-28 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法
JP2009231458A (ja) * 2008-03-21 2009-10-08 Furukawa Electric Co Ltd:The 電界効果トランジスタ
JP2010135640A (ja) * 2008-12-05 2010-06-17 Panasonic Corp 電界効果トランジスタ
JP2012119435A (ja) * 2010-11-30 2012-06-21 Toyota Central R&D Labs Inc Ｉｉｉ族窒化物半導体装置
WO2013008422A1 (ja) * 2011-07-12 2013-01-17 パナソニック株式会社 窒化物半導体装置およびその製造方法
JP2013243213A (ja) * 2012-05-18 2013-12-05 Denso Corp 炭化珪素半導体装置の製造方法
WO2017138505A1 (ja) * 2016-02-12 2017-08-17 パナソニック株式会社 半導体装置
JP2017183428A (ja) * 2016-03-29 2017-10-05 豊田合成株式会社 半導体装置およびその製造方法
WO2019187789A1 (ja) * 2018-03-27 2019-10-03 パナソニック株式会社 窒化物半導体装置
WO2020137303A1 (ja) * 2018-12-27 2020-07-02 パナソニック株式会社 窒化物半導体装置

Also Published As

Publication number Publication date
WO2022176455A1 (ja) 2022-08-25
US20230387286A1 (en) 2023-11-30
JP7813766B2 (ja) 2026-02-13

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