JPWO2021039631A5 - - Google Patents

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Publication number
JPWO2021039631A5
JPWO2021039631A5 JP2021542839A JP2021542839A JPWO2021039631A5 JP WO2021039631 A5 JPWO2021039631 A5 JP WO2021039631A5 JP 2021542839 A JP2021542839 A JP 2021542839A JP 2021542839 A JP2021542839 A JP 2021542839A JP WO2021039631 A5 JPWO2021039631 A5 JP WO2021039631A5
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JP
Japan
Prior art keywords
semiconductor layer
source electrode
electrode
gate electrode
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021542839A
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English (en)
Japanese (ja)
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JPWO2021039631A1 (https=
JP7649974B2 (ja
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Priority claimed from PCT/JP2020/031634 external-priority patent/WO2021039631A1/ja
Publication of JPWO2021039631A1 publication Critical patent/JPWO2021039631A1/ja
Publication of JPWO2021039631A5 publication Critical patent/JPWO2021039631A5/ja
Application granted granted Critical
Publication of JP7649974B2 publication Critical patent/JP7649974B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2021542839A 2019-08-30 2020-08-21 半導体装置 Active JP7649974B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019157572 2019-08-30
JP2019157572 2019-08-30
PCT/JP2020/031634 WO2021039631A1 (ja) 2019-08-30 2020-08-21 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021039631A1 JPWO2021039631A1 (https=) 2021-03-04
JPWO2021039631A5 true JPWO2021039631A5 (https=) 2022-05-12
JP7649974B2 JP7649974B2 (ja) 2025-03-24

Family

ID=74685553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021542839A Active JP7649974B2 (ja) 2019-08-30 2020-08-21 半導体装置

Country Status (2)

Country Link
JP (1) JP7649974B2 (https=)
WO (1) WO2021039631A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117174749A (zh) * 2022-05-26 2023-12-05 联华电子股份有限公司 漏极具有阶梯状化合物层的高电子移动率晶体管
JP2024135349A (ja) * 2023-03-22 2024-10-04 株式会社東芝 半導体装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7465997B2 (en) * 2004-02-12 2008-12-16 International Rectifier Corporation III-nitride bidirectional switch
JP4730529B2 (ja) 2005-07-13 2011-07-20 サンケン電気株式会社 電界効果トランジスタ
JP2008099434A (ja) 2006-10-11 2008-04-24 Sony Corp 電子機器、電源供給方法および電源供給システム
JP5186096B2 (ja) * 2006-10-12 2013-04-17 パナソニック株式会社 窒化物半導体トランジスタ及びその製造方法
JP5879805B2 (ja) 2011-08-09 2016-03-08 富士通株式会社 スイッチング素子及びこれを用いた電源装置
JP2013125918A (ja) * 2011-12-16 2013-06-24 Sumitomo Electric Ind Ltd 半導体装置
WO2014188651A1 (ja) * 2013-05-20 2014-11-27 パナソニックＩｐマネジメント株式会社 半導体装置
JP2015173151A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体装置
JP6553336B2 (ja) 2014-07-28 2019-07-31 エア・ウォーター株式会社 半導体装置
JP6834546B2 (ja) 2017-02-03 2021-02-24 サンケン電気株式会社 半導体装置及びその製造方法

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