JP7691393B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP7691393B2
JP7691393B2 JP2022045801A JP2022045801A JP7691393B2 JP 7691393 B2 JP7691393 B2 JP 7691393B2 JP 2022045801 A JP2022045801 A JP 2022045801A JP 2022045801 A JP2022045801 A JP 2022045801A JP 7691393 B2 JP7691393 B2 JP 7691393B2
Authority
JP
Japan
Prior art keywords
region
silicon carbide
concentration
gate electrode
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022045801A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023139981A (ja
Inventor
俊介 朝羽
洋志 河野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2022045801A priority Critical patent/JP7691393B2/ja
Priority to CN202210811219.4A priority patent/CN116825840A/zh
Priority to EP22194298.0A priority patent/EP4250371A1/en
Priority to US17/940,373 priority patent/US12464794B2/en
Publication of JP2023139981A publication Critical patent/JP2023139981A/ja
Priority to JP2025090369A priority patent/JP7852123B2/ja
Application granted granted Critical
Publication of JP7691393B2 publication Critical patent/JP7691393B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022045801A 2022-03-22 2022-03-22 半導体装置 Active JP7691393B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022045801A JP7691393B2 (ja) 2022-03-22 2022-03-22 半導体装置
CN202210811219.4A CN116825840A (zh) 2022-03-22 2022-07-11 半导体装置
EP22194298.0A EP4250371A1 (en) 2022-03-22 2022-09-07 Semiconductor device
US17/940,373 US12464794B2 (en) 2022-03-22 2022-09-08 Silicon carbide semiconductor device with improved avalanche resistance
JP2025090369A JP7852123B2 (ja) 2022-03-22 2025-05-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022045801A JP7691393B2 (ja) 2022-03-22 2022-03-22 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025090369A Division JP7852123B2 (ja) 2022-03-22 2025-05-30 半導体装置

Publications (2)

Publication Number Publication Date
JP2023139981A JP2023139981A (ja) 2023-10-04
JP7691393B2 true JP7691393B2 (ja) 2025-06-11

Family

ID=83507430

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022045801A Active JP7691393B2 (ja) 2022-03-22 2022-03-22 半導体装置
JP2025090369A Active JP7852123B2 (ja) 2022-03-22 2025-05-30 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025090369A Active JP7852123B2 (ja) 2022-03-22 2025-05-30 半導体装置

Country Status (4)

Country Link
US (1) US12464794B2 (https=)
EP (1) EP4250371A1 (https=)
JP (2) JP7691393B2 (https=)
CN (1) CN116825840A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024137537A (ja) * 2023-03-24 2024-10-07 株式会社東芝 半導体装置
US20250113531A1 (en) * 2023-09-28 2025-04-03 Wolfspeed, Inc. Power silicon carbide based semiconductor devices with selective jfet implants that are self-aligned with the well regions and methods of making such devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013179221A (ja) 2012-02-29 2013-09-09 Toshiba Corp 半導体装置及びその製造方法
JP2014146738A (ja) 2013-01-30 2014-08-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2019165245A (ja) 2019-05-31 2019-09-26 富士電機株式会社 半導体装置
JP2021180262A (ja) 2020-05-14 2021-11-18 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3656744B2 (ja) 2001-11-21 2005-06-08 株式会社デンソー 半導体装置
AU2003275541A1 (en) 2002-10-18 2004-05-04 National Institute Of Advanced Industrial Science And Technology Silicon carbide semiconductor device and its manufacturing method
JP4903439B2 (ja) 2005-05-31 2012-03-28 株式会社東芝 電界効果トランジスタ
JP5789928B2 (ja) * 2010-08-02 2015-10-07 富士電機株式会社 Ｍｏｓ型半導体装置およびその製造方法
CN104584221B (zh) 2013-02-13 2017-04-19 富士电机株式会社 半导体装置
JP6183087B2 (ja) 2013-09-13 2017-08-23 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP6666224B2 (ja) * 2016-09-21 2020-03-13 株式会社東芝 半導体装置
JP6926869B2 (ja) 2017-09-13 2021-08-25 富士電機株式会社 半導体装置
JP7078226B2 (ja) 2018-07-19 2022-05-31 国立研究開発法人産業技術総合研究所 半導体装置
JP7003019B2 (ja) * 2018-09-15 2022-01-20 株式会社東芝 半導体装置
JP7214508B2 (ja) * 2019-03-01 2023-01-30 株式会社東芝 半導体装置
WO2020184338A1 (ja) 2019-03-08 2020-09-17 株式会社新川 ワイヤボンディング装置
JP7439422B2 (ja) 2019-09-06 2024-02-28 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7593225B2 (ja) * 2021-05-14 2024-12-03 株式会社デンソー 炭化珪素半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013179221A (ja) 2012-02-29 2013-09-09 Toshiba Corp 半導体装置及びその製造方法
JP2014146738A (ja) 2013-01-30 2014-08-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2019165245A (ja) 2019-05-31 2019-09-26 富士電機株式会社 半導体装置
JP2021180262A (ja) 2020-05-14 2021-11-18 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機

Also Published As

Publication number Publication date
JP7852123B2 (ja) 2026-04-27
JP2023139981A (ja) 2023-10-04
EP4250371A1 (en) 2023-09-27
CN116825840A (zh) 2023-09-29
JP2025113483A (ja) 2025-08-01
US20230307502A1 (en) 2023-09-28
US12464794B2 (en) 2025-11-04

Similar Documents

Publication Publication Date Title
JP7214508B2 (ja) 半導体装置
JP6666224B2 (ja) 半導体装置
JP6649183B2 (ja) 半導体装置
US10872974B2 (en) Semiconductor device
US11955543B2 (en) Semiconductor device
JP2020047683A (ja) 半導体装置
JP7574162B2 (ja) 半導体装置
US12107127B2 (en) Semiconductor device
JP7852123B2 (ja) 半導体装置
JP2022009745A (ja) 半導体装置
JP7516236B2 (ja) 半導体装置
US12255253B2 (en) Semiconductor device
JP7614999B2 (ja) 半導体装置
US20240321968A1 (en) Semiconductor device
US20260040658A1 (en) Semiconductor device
US20250169104A1 (en) Semiconductor device
US20260090072A1 (en) Semiconductor device
WO2025062707A1 (ja) 半導体装置
JP2025048128A (ja) 半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240610

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250304

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250423

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250507

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250530

R150 Certificate of patent or registration of utility model

Ref document number: 7691393

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150