CN116825840A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN116825840A
CN116825840A CN202210811219.4A CN202210811219A CN116825840A CN 116825840 A CN116825840 A CN 116825840A CN 202210811219 A CN202210811219 A CN 202210811219A CN 116825840 A CN116825840 A CN 116825840A
Authority
CN
China
Prior art keywords
region
concentration
silicon carbide
contact
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210811219.4A
Other languages
English (en)
Chinese (zh)
Inventor
朝羽俊介
河野洋志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Publication of CN116825840A publication Critical patent/CN116825840A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202210811219.4A 2022-03-22 2022-07-11 半导体装置 Pending CN116825840A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-045801 2022-03-22
JP2022045801A JP7691393B2 (ja) 2022-03-22 2022-03-22 半導体装置

Publications (1)

Publication Number Publication Date
CN116825840A true CN116825840A (zh) 2023-09-29

Family

ID=83507430

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210811219.4A Pending CN116825840A (zh) 2022-03-22 2022-07-11 半导体装置

Country Status (4)

Country Link
US (1) US12464794B2 (https=)
EP (1) EP4250371A1 (https=)
JP (2) JP7691393B2 (https=)
CN (1) CN116825840A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024137537A (ja) * 2023-03-24 2024-10-07 株式会社東芝 半導体装置
US20250113531A1 (en) * 2023-09-28 2025-04-03 Wolfspeed, Inc. Power silicon carbide based semiconductor devices with selective jfet implants that are self-aligned with the well regions and methods of making such devices

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3656744B2 (ja) 2001-11-21 2005-06-08 株式会社デンソー 半導体装置
AU2003275541A1 (en) 2002-10-18 2004-05-04 National Institute Of Advanced Industrial Science And Technology Silicon carbide semiconductor device and its manufacturing method
JP4903439B2 (ja) 2005-05-31 2012-03-28 株式会社東芝 電界効果トランジスタ
JP5789928B2 (ja) * 2010-08-02 2015-10-07 富士電機株式会社 Ｍｏｓ型半導体装置およびその製造方法
JP5597217B2 (ja) 2012-02-29 2014-10-01 株式会社東芝 半導体装置及びその製造方法
JP2014146738A (ja) 2013-01-30 2014-08-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
CN104584221B (zh) 2013-02-13 2017-04-19 富士电机株式会社 半导体装置
JP6183087B2 (ja) 2013-09-13 2017-08-23 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP6666224B2 (ja) * 2016-09-21 2020-03-13 株式会社東芝 半導体装置
JP6926869B2 (ja) 2017-09-13 2021-08-25 富士電機株式会社 半導体装置
JP7078226B2 (ja) 2018-07-19 2022-05-31 国立研究開発法人産業技術総合研究所 半導体装置
JP7003019B2 (ja) * 2018-09-15 2022-01-20 株式会社東芝 半導体装置
JP7214508B2 (ja) * 2019-03-01 2023-01-30 株式会社東芝 半導体装置
WO2020184338A1 (ja) 2019-03-08 2020-09-17 株式会社新川 ワイヤボンディング装置
JP6737379B2 (ja) 2019-05-31 2020-08-05 富士電機株式会社 半導体装置
JP7439422B2 (ja) 2019-09-06 2024-02-28 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7362546B2 (ja) 2020-05-14 2023-10-17 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP7593225B2 (ja) * 2021-05-14 2024-12-03 株式会社デンソー 炭化珪素半導体装置

Also Published As

Publication number Publication date
JP7852123B2 (ja) 2026-04-27
JP2023139981A (ja) 2023-10-04
JP7691393B2 (ja) 2025-06-11
EP4250371A1 (en) 2023-09-27
JP2025113483A (ja) 2025-08-01
US20230307502A1 (en) 2023-09-28
US12464794B2 (en) 2025-11-04

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