JPWO2023008031A5 - - Google Patents

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Publication number
JPWO2023008031A5
JPWO2023008031A5 JP2023538350A JP2023538350A JPWO2023008031A5 JP WO2023008031 A5 JPWO2023008031 A5 JP WO2023008031A5 JP 2023538350 A JP2023538350 A JP 2023538350A JP 2023538350 A JP2023538350 A JP 2023538350A JP WO2023008031 A5 JPWO2023008031 A5 JP WO2023008031A5
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JP
Japan
Prior art keywords
layer
nitride semiconductor
semi
nitride
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023538350A
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English (en)
Japanese (ja)
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JPWO2023008031A1 (https=
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/025461 external-priority patent/WO2023008031A1/ja
Publication of JPWO2023008031A1 publication Critical patent/JPWO2023008031A1/ja
Publication of JPWO2023008031A5 publication Critical patent/JPWO2023008031A5/ja
Pending legal-status Critical Current

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JP2023538350A 2021-07-26 2022-06-27 Pending JPWO2023008031A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021121612 2021-07-26
PCT/JP2022/025461 WO2023008031A1 (ja) 2021-07-26 2022-06-27 窒化物半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2023008031A1 JPWO2023008031A1 (https=) 2023-02-02
JPWO2023008031A5 true JPWO2023008031A5 (https=) 2024-04-16

Family

ID=85087922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023538350A Pending JPWO2023008031A1 (https=) 2021-07-26 2022-06-27

Country Status (3)

Country Link
US (1) US20240162165A1 (https=)
JP (1) JPWO2023008031A1 (https=)
WO (1) WO2023008031A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12599008B2 (en) * 2023-04-06 2026-04-07 Nxp Usa, Inc. Transistor with source manifold in non-active die region
CN116959982A (zh) * 2023-09-21 2023-10-27 华通芯电(南昌)电子科技有限公司 一种晶圆片制备方法及晶圆片

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8575651B2 (en) * 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
JP5401788B2 (ja) * 2007-12-28 2014-01-29 富士通株式会社 窒化物半導体装置及びその製造方法
JP5436819B2 (ja) * 2008-08-04 2014-03-05 日本碍子株式会社 高周波用半導体素子、高周波用半導体素子形成用のエピタキシャル基板、および高周波用半導体素子形成用エピタキシャル基板の作製方法
CN111527592A (zh) * 2017-12-28 2020-08-11 罗姆股份有限公司 氮化物半导体装置
JP7433014B2 (ja) * 2018-10-30 2024-02-19 ローム株式会社 半導体装置
WO2021020574A1 (ja) * 2019-08-01 2021-02-04 ローム株式会社 半導体基板及び半導体装置並びにそれらの製造方法
JP2021100028A (ja) * 2019-12-20 2021-07-01 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びその製造方法、並びに電子機器

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