JPWO2023026803A5 - - Google Patents
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- Publication number
- JPWO2023026803A5 JPWO2023026803A5 JP2023543780A JP2023543780A JPWO2023026803A5 JP WO2023026803 A5 JPWO2023026803 A5 JP WO2023026803A5 JP 2023543780 A JP2023543780 A JP 2023543780A JP 2023543780 A JP2023543780 A JP 2023543780A JP WO2023026803 A5 JPWO2023026803 A5 JP WO2023026803A5
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- silicon carbide
- thickness
- insulating film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021137290 | 2021-08-25 | ||
| PCT/JP2022/029771 WO2023026803A1 (ja) | 2021-08-25 | 2022-08-03 | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023026803A1 JPWO2023026803A1 (https=) | 2023-03-02 |
| JPWO2023026803A5 true JPWO2023026803A5 (https=) | 2024-05-20 |
Family
ID=85323134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023543780A Pending JPWO2023026803A1 (https=) | 2021-08-25 | 2022-08-03 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240332414A1 (https=) |
| JP (1) | JPWO2023026803A1 (https=) |
| CN (1) | CN117716512A (https=) |
| DE (1) | DE112022004091T5 (https=) |
| WO (1) | WO2023026803A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2025049885A (ja) * | 2023-09-22 | 2025-04-04 | 株式会社東芝 | 半導体装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10127885B4 (de) * | 2001-06-08 | 2009-09-24 | Infineon Technologies Ag | Trench-Leistungshalbleiterbauelement |
| JP3708057B2 (ja) * | 2001-07-17 | 2005-10-19 | 株式会社東芝 | 高耐圧半導体装置 |
| DE112009005538B3 (de) * | 2009-07-15 | 2020-02-13 | Mitsubishi Electric Corporation | Leistungshalbleitervorrichtung |
| JP5881322B2 (ja) * | 2011-04-06 | 2016-03-09 | ローム株式会社 | 半導体装置 |
| EP2782130B1 (en) * | 2011-11-14 | 2020-01-08 | Fuji Electric Co., Ltd. | High-voltage-resistance semiconductor device |
| JP5812029B2 (ja) | 2012-06-13 | 2015-11-11 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| US9257511B2 (en) * | 2013-03-26 | 2016-02-09 | Infineon Technologies Ag | Silicon carbide device and a method for forming a silicon carbide device |
| DE112015004374B4 (de) * | 2014-09-26 | 2019-02-14 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
| JP6404697B2 (ja) * | 2014-12-10 | 2018-10-10 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| CN107112353B (zh) * | 2014-12-23 | 2020-12-22 | Abb电网瑞士股份公司 | 反向传导半导体装置 |
| JP6260553B2 (ja) * | 2015-02-27 | 2018-01-17 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
| JP6611960B2 (ja) * | 2016-11-01 | 2019-11-27 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
| JP7237411B2 (ja) | 2020-03-04 | 2023-03-13 | 株式会社藤商事 | 遊技機 |
| CN115917757A (zh) * | 2020-07-31 | 2023-04-04 | 罗姆股份有限公司 | SiC半导体装置 |
-
2022
- 2022-08-03 WO PCT/JP2022/029771 patent/WO2023026803A1/ja not_active Ceased
- 2022-08-03 JP JP2023543780A patent/JPWO2023026803A1/ja active Pending
- 2022-08-03 DE DE112022004091.2T patent/DE112022004091T5/de active Pending
- 2022-08-03 US US18/579,668 patent/US20240332414A1/en active Pending
- 2022-08-03 CN CN202280050942.3A patent/CN117716512A/zh active Pending
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