CN117716512A - 碳化硅半导体器件及碳化硅半导体器件的制造方法 - Google Patents

碳化硅半导体器件及碳化硅半导体器件的制造方法 Download PDF

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Publication number
CN117716512A
CN117716512A CN202280050942.3A CN202280050942A CN117716512A CN 117716512 A CN117716512 A CN 117716512A CN 202280050942 A CN202280050942 A CN 202280050942A CN 117716512 A CN117716512 A CN 117716512A
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CN
China
Prior art keywords
silicon carbide
region
main surface
semiconductor device
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280050942.3A
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English (en)
Chinese (zh)
Inventor
斋藤雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN117716512A publication Critical patent/CN117716512A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
CN202280050942.3A 2021-08-25 2022-08-03 碳化硅半导体器件及碳化硅半导体器件的制造方法 Pending CN117716512A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021137290 2021-08-25
JP2021-137290 2021-08-25
PCT/JP2022/029771 WO2023026803A1 (ja) 2021-08-25 2022-08-03 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN117716512A true CN117716512A (zh) 2024-03-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280050942.3A Pending CN117716512A (zh) 2021-08-25 2022-08-03 碳化硅半导体器件及碳化硅半导体器件的制造方法

Country Status (5)

Country Link
US (1) US20240332414A1 (https=)
JP (1) JPWO2023026803A1 (https=)
CN (1) CN117716512A (https=)
DE (1) DE112022004091T5 (https=)
WO (1) WO2023026803A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025049885A (ja) * 2023-09-22 2025-04-04 株式会社東芝 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003101039A (ja) * 2001-07-17 2003-04-04 Toshiba Corp 高耐圧半導体装置
CN105702734A (zh) * 2014-12-10 2016-06-22 瑞萨电子株式会社 半导体器件及制造半导体器件的方法
DE112009005538B3 (de) * 2009-07-15 2020-02-13 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10127885B4 (de) * 2001-06-08 2009-09-24 Infineon Technologies Ag Trench-Leistungshalbleiterbauelement
JP5881322B2 (ja) * 2011-04-06 2016-03-09 ローム株式会社 半導体装置
EP2782130B1 (en) * 2011-11-14 2020-01-08 Fuji Electric Co., Ltd. High-voltage-resistance semiconductor device
JP5812029B2 (ja) 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US9257511B2 (en) * 2013-03-26 2016-02-09 Infineon Technologies Ag Silicon carbide device and a method for forming a silicon carbide device
DE112015004374B4 (de) * 2014-09-26 2019-02-14 Mitsubishi Electric Corporation Halbleitervorrichtung
CN107112353B (zh) * 2014-12-23 2020-12-22 Abb电网瑞士股份公司 反向传导半导体装置
JP6260553B2 (ja) * 2015-02-27 2018-01-17 豊田合成株式会社 半導体装置およびその製造方法
JP6611960B2 (ja) * 2016-11-01 2019-11-27 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP7237411B2 (ja) 2020-03-04 2023-03-13 株式会社藤商事 遊技機
CN115917757A (zh) * 2020-07-31 2023-04-04 罗姆股份有限公司 SiC半导体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003101039A (ja) * 2001-07-17 2003-04-04 Toshiba Corp 高耐圧半導体装置
DE112009005538B3 (de) * 2009-07-15 2020-02-13 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung
CN105702734A (zh) * 2014-12-10 2016-06-22 瑞萨电子株式会社 半导体器件及制造半导体器件的方法

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US20240332414A1 (en) 2024-10-03
DE112022004091T5 (de) 2024-06-20
WO2023026803A1 (ja) 2023-03-02
JPWO2023026803A1 (https=) 2023-03-02

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