JPWO2025018290A5 - - Google Patents

Info

Publication number
JPWO2025018290A5
JPWO2025018290A5 JP2025534028A JP2025534028A JPWO2025018290A5 JP WO2025018290 A5 JPWO2025018290 A5 JP WO2025018290A5 JP 2025534028 A JP2025534028 A JP 2025534028A JP 2025534028 A JP2025534028 A JP 2025534028A JP WO2025018290 A5 JPWO2025018290 A5 JP WO2025018290A5
Authority
JP
Japan
Prior art keywords
semiconductor substrate
trench contact
region
polycrystalline
depth direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025534028A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025018290A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/025243 external-priority patent/WO2025018290A1/ja
Publication of JPWO2025018290A1 publication Critical patent/JPWO2025018290A1/ja
Publication of JPWO2025018290A5 publication Critical patent/JPWO2025018290A5/ja
Pending legal-status Critical Current

Links

JP2025534028A 2023-07-14 2024-07-12 Pending JPWO2025018290A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023115959 2023-07-14
PCT/JP2024/025243 WO2025018290A1 (ja) 2023-07-14 2024-07-12 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2025018290A1 JPWO2025018290A1 (https=) 2025-01-23
JPWO2025018290A5 true JPWO2025018290A5 (https=) 2025-09-12

Family

ID=94282165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025534028A Pending JPWO2025018290A1 (https=) 2023-07-14 2024-07-12

Country Status (3)

Country Link
US (1) US20250318253A1 (https=)
JP (1) JPWO2025018290A1 (https=)
WO (1) WO2025018290A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190172770A1 (en) * 2017-12-05 2019-06-06 Infineon Technologies Austria Ag Semiconductor Device with Integrated pn Diode Temperature Sensor
JP7268330B2 (ja) * 2018-11-05 2023-05-08 富士電機株式会社 半導体装置および製造方法
JP7507756B2 (ja) * 2019-06-04 2024-06-28 ローム株式会社 半導体装置
JP7703881B2 (ja) * 2021-04-08 2025-07-08 富士電機株式会社 半導体装置

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