JPWO2024203661A5 - - Google Patents

Info

Publication number
JPWO2024203661A5
JPWO2024203661A5 JP2025510606A JP2025510606A JPWO2024203661A5 JP WO2024203661 A5 JPWO2024203661 A5 JP WO2024203661A5 JP 2025510606 A JP2025510606 A JP 2025510606A JP 2025510606 A JP2025510606 A JP 2025510606A JP WO2024203661 A5 JPWO2024203661 A5 JP WO2024203661A5
Authority
JP
Japan
Prior art keywords
region
layer portion
surface layer
semiconductor chip
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025510606A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024203661A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/010860 external-priority patent/WO2024203661A1/ja
Publication of JPWO2024203661A1 publication Critical patent/JPWO2024203661A1/ja
Publication of JPWO2024203661A5 publication Critical patent/JPWO2024203661A5/ja
Pending legal-status Critical Current

Links

JP2025510606A 2023-03-30 2024-03-19 Pending JPWO2024203661A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023055785 2023-03-30
PCT/JP2024/010860 WO2024203661A1 (ja) 2023-03-30 2024-03-19 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024203661A1 JPWO2024203661A1 (https=) 2024-10-03
JPWO2024203661A5 true JPWO2024203661A5 (https=) 2026-01-05

Family

ID=92904872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025510606A Pending JPWO2024203661A1 (https=) 2023-03-30 2024-03-19

Country Status (3)

Country Link
US (1) US20260032948A1 (https=)
JP (1) JPWO2024203661A1 (https=)
WO (1) WO2024203661A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121013366B (zh) * 2025-10-27 2026-02-03 荣芯半导体(宁波)有限公司 半导体器件及其制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3971062B2 (ja) * 1999-07-29 2007-09-05 株式会社東芝 高耐圧半導体装置
JP2008041913A (ja) * 2006-08-04 2008-02-21 Ricoh Co Ltd 半導体装置
JP4602465B2 (ja) * 2008-12-04 2010-12-22 株式会社東芝 半導体装置
US8754469B2 (en) * 2010-10-26 2014-06-17 Texas Instruments Incorporated Hybrid active-field gap extended drain MOS transistor
JP6284421B2 (ja) * 2014-05-09 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
JP7040976B2 (ja) * 2018-03-29 2022-03-23 ラピスセミコンダクタ株式会社 半導体装置

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