JPWO2023042508A5 - - Google Patents
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- Publication number
- JPWO2023042508A5 JPWO2023042508A5 JP2023548130A JP2023548130A JPWO2023042508A5 JP WO2023042508 A5 JPWO2023042508 A5 JP WO2023042508A5 JP 2023548130 A JP2023548130 A JP 2023548130A JP 2023548130 A JP2023548130 A JP 2023548130A JP WO2023042508 A5 JPWO2023042508 A5 JP WO2023042508A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor region
- gate
- contact hole
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021150122 | 2021-09-15 | ||
| PCT/JP2022/024785 WO2023042508A1 (ja) | 2021-09-15 | 2022-06-21 | 炭化珪素半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023042508A1 JPWO2023042508A1 (https=) | 2023-03-23 |
| JPWO2023042508A5 true JPWO2023042508A5 (https=) | 2024-06-05 |
Family
ID=85602709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023548130A Pending JPWO2023042508A1 (https=) | 2021-09-15 | 2022-06-21 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240371766A1 (https=) |
| JP (1) | JPWO2023042508A1 (https=) |
| CN (1) | CN117693824A (https=) |
| DE (1) | DE112022004385T5 (https=) |
| WO (1) | WO2023042508A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20260038481A (ko) * | 2024-09-12 | 2026-03-19 | 삼성전자주식회사 | 반도체 장치 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2950569B2 (ja) * | 1990-03-01 | 1999-09-20 | 株式会社東芝 | Ｍｏｓ型電界効果トランジスタ |
| JP5321377B2 (ja) * | 2009-09-11 | 2013-10-23 | 三菱電機株式会社 | 電力用半導体装置 |
| WO2011161721A1 (ja) * | 2010-06-24 | 2011-12-29 | 三菱電機株式会社 | 電力用半導体装置 |
| JP6164636B2 (ja) * | 2013-03-05 | 2017-07-19 | ローム株式会社 | 半導体装置 |
| JP6135436B2 (ja) * | 2013-10-04 | 2017-05-31 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP6282088B2 (ja) * | 2013-11-13 | 2018-02-21 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| JP6617292B2 (ja) * | 2014-05-23 | 2019-12-11 | パナソニックＩｐマネジメント株式会社 | 炭化珪素半導体装置 |
| WO2018055719A1 (ja) | 2016-09-23 | 2018-03-29 | 三菱電機株式会社 | 炭化珪素半導体装置 |
| DE102017108047A1 (de) * | 2017-04-13 | 2018-10-18 | Infineon Technologies Ag | Halbleitervorrichtung mit struktur zum schutz gegen elektrostatische entladung |
| JP2021150122A (ja) | 2020-03-18 | 2021-09-27 | 株式会社リコー | 蓄電素子、電極、及び電極材料 |
| DE112020007341T5 (de) * | 2020-06-24 | 2023-04-06 | Mitsubishi Electric Corporation | Siliciumcarbid-halbleitereinheit |
-
2022
- 2022-06-21 CN CN202280051598.XA patent/CN117693824A/zh active Pending
- 2022-06-21 WO PCT/JP2022/024785 patent/WO2023042508A1/ja not_active Ceased
- 2022-06-21 US US18/293,460 patent/US20240371766A1/en active Pending
- 2022-06-21 JP JP2023548130A patent/JPWO2023042508A1/ja active Pending
- 2022-06-21 DE DE112022004385.7T patent/DE112022004385T5/de active Pending
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