JPWO2023042536A5 - - Google Patents

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Publication number
JPWO2023042536A5
JPWO2023042536A5 JP2023548145A JP2023548145A JPWO2023042536A5 JP WO2023042536 A5 JPWO2023042536 A5 JP WO2023042536A5 JP 2023548145 A JP2023548145 A JP 2023548145A JP 2023548145 A JP2023548145 A JP 2023548145A JP WO2023042536 A5 JPWO2023042536 A5 JP WO2023042536A5
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JP
Japan
Prior art keywords
region
silicon carbide
gate
semiconductor device
gate runner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023548145A
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English (en)
Japanese (ja)
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JPWO2023042536A1 (https=
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Priority claimed from PCT/JP2022/027572 external-priority patent/WO2023042536A1/ja
Publication of JPWO2023042536A1 publication Critical patent/JPWO2023042536A1/ja
Publication of JPWO2023042536A5 publication Critical patent/JPWO2023042536A5/ja
Pending legal-status Critical Current

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JP2023548145A 2021-09-15 2022-07-13 Pending JPWO2023042536A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021150121 2021-09-15
PCT/JP2022/027572 WO2023042536A1 (ja) 2021-09-15 2022-07-13 炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023042536A1 JPWO2023042536A1 (https=) 2023-03-23
JPWO2023042536A5 true JPWO2023042536A5 (https=) 2024-06-05

Family

ID=85602724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023548145A Pending JPWO2023042536A1 (https=) 2021-09-15 2022-07-13

Country Status (5)

Country Link
US (1) US20240339499A1 (https=)
JP (1) JPWO2023042536A1 (https=)
CN (1) CN117693823A (https=)
DE (1) DE112022004405T5 (https=)
WO (1) WO2023042536A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5321377B2 (ja) * 2009-09-11 2013-10-23 三菱電機株式会社 電力用半導体装置
JP6282088B2 (ja) * 2013-11-13 2018-02-21 三菱電機株式会社 半導体装置及びその製造方法
DE112017007186B4 (de) * 2017-03-07 2024-06-27 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandler
US10269951B2 (en) * 2017-05-16 2019-04-23 General Electric Company Semiconductor device layout and method for forming same
JP6876767B2 (ja) * 2019-10-07 2021-05-26 ローム株式会社 半導体装置
JP7276691B2 (ja) 2020-03-18 2023-05-18 トヨタ自動車株式会社 セパレータ一体型電極の製造方法
JP2020175278A (ja) 2020-08-07 2020-10-29 株式会社三洋物産 遊技機

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