CN117693823A - 碳化硅半导体器件 - Google Patents

碳化硅半导体器件 Download PDF

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Publication number
CN117693823A
CN117693823A CN202280051428.1A CN202280051428A CN117693823A CN 117693823 A CN117693823 A CN 117693823A CN 202280051428 A CN202280051428 A CN 202280051428A CN 117693823 A CN117693823 A CN 117693823A
Authority
CN
China
Prior art keywords
region
gate
silicon carbide
semiconductor device
flow channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280051428.1A
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English (en)
Chinese (zh)
Inventor
内田光亮
增田健良
斋藤雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN117693823A publication Critical patent/CN117693823A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202280051428.1A 2021-09-15 2022-07-13 碳化硅半导体器件 Pending CN117693823A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-150121 2021-09-15
JP2021150121 2021-09-15
PCT/JP2022/027572 WO2023042536A1 (ja) 2021-09-15 2022-07-13 炭化珪素半導体装置

Publications (1)

Publication Number Publication Date
CN117693823A true CN117693823A (zh) 2024-03-12

Family

ID=85602724

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280051428.1A Pending CN117693823A (zh) 2021-09-15 2022-07-13 碳化硅半导体器件

Country Status (5)

Country Link
US (1) US20240339499A1 (https=)
JP (1) JPWO2023042536A1 (https=)
CN (1) CN117693823A (https=)
DE (1) DE112022004405T5 (https=)
WO (1) WO2023042536A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061064A (ja) * 2009-09-11 2011-03-24 Mitsubishi Electric Corp 電力用半導体装置
JP2015095578A (ja) * 2013-11-13 2015-05-18 三菱電機株式会社 半導体装置及びその製造方法
CN110431669A (zh) * 2017-03-07 2019-11-08 三菱电机株式会社 半导体装置以及电力变换装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10269951B2 (en) * 2017-05-16 2019-04-23 General Electric Company Semiconductor device layout and method for forming same
JP6876767B2 (ja) * 2019-10-07 2021-05-26 ローム株式会社 半導体装置
JP7276691B2 (ja) 2020-03-18 2023-05-18 トヨタ自動車株式会社 セパレータ一体型電極の製造方法
JP2020175278A (ja) 2020-08-07 2020-10-29 株式会社三洋物産 遊技機

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061064A (ja) * 2009-09-11 2011-03-24 Mitsubishi Electric Corp 電力用半導体装置
JP2015095578A (ja) * 2013-11-13 2015-05-18 三菱電機株式会社 半導体装置及びその製造方法
CN110431669A (zh) * 2017-03-07 2019-11-08 三菱电机株式会社 半导体装置以及电力变换装置

Also Published As

Publication number Publication date
WO2023042536A1 (ja) 2023-03-23
JPWO2023042536A1 (https=) 2023-03-23
DE112022004405T5 (de) 2024-07-04
US20240339499A1 (en) 2024-10-10

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