JP2006093430A5 - - Google Patents

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Publication number
JP2006093430A5
JP2006093430A5 JP2004277562A JP2004277562A JP2006093430A5 JP 2006093430 A5 JP2006093430 A5 JP 2006093430A5 JP 2004277562 A JP2004277562 A JP 2004277562A JP 2004277562 A JP2004277562 A JP 2004277562A JP 2006093430 A5 JP2006093430 A5 JP 2006093430A5
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JP
Japan
Prior art keywords
conductivity type
region
semiconductor device
base region
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004277562A
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English (en)
Japanese (ja)
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JP2006093430A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004277562A priority Critical patent/JP2006093430A/ja
Priority claimed from JP2004277562A external-priority patent/JP2006093430A/ja
Priority to US11/220,678 priority patent/US20060076614A1/en
Publication of JP2006093430A publication Critical patent/JP2006093430A/ja
Publication of JP2006093430A5 publication Critical patent/JP2006093430A5/ja
Pending legal-status Critical Current

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JP2004277562A 2004-09-24 2004-09-24 半導体装置 Pending JP2006093430A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004277562A JP2006093430A (ja) 2004-09-24 2004-09-24 半導体装置
US11/220,678 US20060076614A1 (en) 2004-09-24 2005-09-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004277562A JP2006093430A (ja) 2004-09-24 2004-09-24 半導体装置

Publications (2)

Publication Number Publication Date
JP2006093430A JP2006093430A (ja) 2006-04-06
JP2006093430A5 true JP2006093430A5 (https=) 2007-10-04

Family

ID=36144409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004277562A Pending JP2006093430A (ja) 2004-09-24 2004-09-24 半導体装置

Country Status (2)

Country Link
US (1) US20060076614A1 (https=)
JP (1) JP2006093430A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300420A (ja) 2007-05-29 2008-12-11 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
JP5196980B2 (ja) * 2007-12-10 2013-05-15 株式会社東芝 半導体装置
JP5721308B2 (ja) 2008-03-26 2015-05-20 ローム株式会社 半導体装置
JP2012059931A (ja) * 2010-09-09 2012-03-22 Toshiba Corp 半導体装置
CN103489785A (zh) * 2013-09-03 2014-01-01 上海恺创电子有限公司 超级结半导体器件的元胞结构和工艺实现方法
US9673318B1 (en) * 2016-01-13 2017-06-06 Infineon Technologies Americas Corp. Semiconductor device including a gate trench having a gate electrode located above a buried electrode
WO2018029796A1 (ja) * 2016-08-10 2018-02-15 日産自動車株式会社 半導体装置
JP7175787B2 (ja) * 2019-02-07 2022-11-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598375A (ja) * 1982-07-05 1984-01-17 Matsushita Electronics Corp 縦型構造電界効果トランジスタ
JPH09213939A (ja) * 1996-01-30 1997-08-15 Nec Corp 半導体装置
JP2001284584A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 半導体装置及びその製造方法
JP4158453B2 (ja) * 2002-08-22 2008-10-01 株式会社デンソー 半導体装置及びその製造方法
US7057216B2 (en) * 2003-10-31 2006-06-06 International Business Machines Corporation High mobility heterojunction complementary field effect transistors and methods thereof

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