JP2006093430A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2006093430A
JP2006093430A JP2004277562A JP2004277562A JP2006093430A JP 2006093430 A JP2006093430 A JP 2006093430A JP 2004277562 A JP2004277562 A JP 2004277562A JP 2004277562 A JP2004277562 A JP 2004277562A JP 2006093430 A JP2006093430 A JP 2006093430A
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JP
Japan
Prior art keywords
conductivity type
region
type
semiconductor device
base region
Prior art date
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Pending
Application number
JP2004277562A
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English (en)
Japanese (ja)
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JP2006093430A5 (https=
Inventor
Hitoshi Ninomiya
仁 二宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Priority to JP2004277562A priority Critical patent/JP2006093430A/ja
Priority to US11/220,678 priority patent/US20060076614A1/en
Publication of JP2006093430A publication Critical patent/JP2006093430A/ja
Publication of JP2006093430A5 publication Critical patent/JP2006093430A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/054—Forming charge compensation regions, e.g. superjunctions by high energy implantations in bulk semiconductor bodies, e.g. forming pillars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2004277562A 2004-09-24 2004-09-24 半導体装置 Pending JP2006093430A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004277562A JP2006093430A (ja) 2004-09-24 2004-09-24 半導体装置
US11/220,678 US20060076614A1 (en) 2004-09-24 2005-09-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004277562A JP2006093430A (ja) 2004-09-24 2004-09-24 半導体装置

Publications (2)

Publication Number Publication Date
JP2006093430A true JP2006093430A (ja) 2006-04-06
JP2006093430A5 JP2006093430A5 (https=) 2007-10-04

Family

ID=36144409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004277562A Pending JP2006093430A (ja) 2004-09-24 2004-09-24 半導体装置

Country Status (2)

Country Link
US (1) US20060076614A1 (https=)
JP (1) JP2006093430A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141243A (ja) * 2007-12-10 2009-06-25 Toshiba Corp 半導体装置
WO2009119735A1 (ja) * 2008-03-26 2009-10-01 ローム株式会社 半導体装置およびその製造方法
US7829417B2 (en) 2007-05-29 2010-11-09 Nec Electronics Corporation Semiconductor apparatus and method of manufacturing semiconductor apparatus
JP2020129573A (ja) * 2019-02-07 2020-08-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012059931A (ja) * 2010-09-09 2012-03-22 Toshiba Corp 半導体装置
CN103489785A (zh) * 2013-09-03 2014-01-01 上海恺创电子有限公司 超级结半导体器件的元胞结构和工艺实现方法
US9673318B1 (en) * 2016-01-13 2017-06-06 Infineon Technologies Americas Corp. Semiconductor device including a gate trench having a gate electrode located above a buried electrode
WO2018029796A1 (ja) * 2016-08-10 2018-02-15 日産自動車株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598375A (ja) * 1982-07-05 1984-01-17 Matsushita Electronics Corp 縦型構造電界効果トランジスタ
JPH09213939A (ja) * 1996-01-30 1997-08-15 Nec Corp 半導体装置
JP2001284584A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 半導体装置及びその製造方法
JP2004079955A (ja) * 2002-08-22 2004-03-11 Denso Corp 半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057216B2 (en) * 2003-10-31 2006-06-06 International Business Machines Corporation High mobility heterojunction complementary field effect transistors and methods thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598375A (ja) * 1982-07-05 1984-01-17 Matsushita Electronics Corp 縦型構造電界効果トランジスタ
JPH09213939A (ja) * 1996-01-30 1997-08-15 Nec Corp 半導体装置
JP2001284584A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 半導体装置及びその製造方法
JP2004079955A (ja) * 2002-08-22 2004-03-11 Denso Corp 半導体装置及びその製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829417B2 (en) 2007-05-29 2010-11-09 Nec Electronics Corporation Semiconductor apparatus and method of manufacturing semiconductor apparatus
JP2009141243A (ja) * 2007-12-10 2009-06-25 Toshiba Corp 半導体装置
US9496387B2 (en) 2008-03-26 2016-11-15 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
JP2009260253A (ja) * 2008-03-26 2009-11-05 Rohm Co Ltd 半導体装置およびその製造方法
US8283721B2 (en) 2008-03-26 2012-10-09 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
US9166038B2 (en) 2008-03-26 2015-10-20 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
WO2009119735A1 (ja) * 2008-03-26 2009-10-01 ローム株式会社 半導体装置およびその製造方法
US10290733B2 (en) 2008-03-26 2019-05-14 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
US10686067B2 (en) 2008-03-26 2020-06-16 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
US11127851B2 (en) 2008-03-26 2021-09-21 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
US12009420B2 (en) 2008-03-26 2024-06-11 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
US12034073B2 (en) 2008-03-26 2024-07-09 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
JP2020129573A (ja) * 2019-02-07 2020-08-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7175787B2 (ja) 2019-02-07 2022-11-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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Publication number Publication date
US20060076614A1 (en) 2006-04-13

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