JPWO2024053267A5 - - Google Patents

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Publication number
JPWO2024053267A5
JPWO2024053267A5 JP2024545483A JP2024545483A JPWO2024053267A5 JP WO2024053267 A5 JPWO2024053267 A5 JP WO2024053267A5 JP 2024545483 A JP2024545483 A JP 2024545483A JP 2024545483 A JP2024545483 A JP 2024545483A JP WO2024053267 A5 JPWO2024053267 A5 JP WO2024053267A5
Authority
JP
Japan
Prior art keywords
trenches
semiconductor device
field plate
intersection regions
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024545483A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024053267A1 (https=
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/026844 external-priority patent/WO2024053267A1/ja
Publication of JPWO2024053267A1 publication Critical patent/JPWO2024053267A1/ja
Publication of JPWO2024053267A5 publication Critical patent/JPWO2024053267A5/ja
Pending legal-status Critical Current

Links

JP2024545483A 2022-09-06 2023-07-21 Pending JPWO2024053267A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022141444 2022-09-06
PCT/JP2023/026844 WO2024053267A1 (ja) 2022-09-06 2023-07-21 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024053267A1 JPWO2024053267A1 (https=) 2024-03-14
JPWO2024053267A5 true JPWO2024053267A5 (https=) 2025-05-16

Family

ID=90192408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024545483A Pending JPWO2024053267A1 (https=) 2022-09-06 2023-07-21

Country Status (2)

Country Link
JP (1) JPWO2024053267A1 (https=)
WO (1) WO2024053267A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5580150B2 (ja) * 2010-09-09 2014-08-27 株式会社東芝 半導体装置
US8759908B2 (en) * 2011-11-01 2014-06-24 Alpha And Omega Semiconductor Incorporated Two-dimensional shielded gate transistor device and method of manufacture
US9252263B1 (en) * 2014-07-31 2016-02-02 Infineon Technologies Austria Ag Multiple semiconductor device trenches per cell pitch
JP2021192400A (ja) * 2020-06-05 2021-12-16 ローム株式会社 半導体装置
JP7365306B2 (ja) * 2020-09-09 2023-10-19 株式会社東芝 半導体装置

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