JPWO2024053267A1 - - Google Patents
Info
- Publication number
- JPWO2024053267A1 JPWO2024053267A1 JP2024545483A JP2024545483A JPWO2024053267A1 JP WO2024053267 A1 JPWO2024053267 A1 JP WO2024053267A1 JP 2024545483 A JP2024545483 A JP 2024545483A JP 2024545483 A JP2024545483 A JP 2024545483A JP WO2024053267 A1 JPWO2024053267 A1 JP WO2024053267A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022141444 | 2022-09-06 | ||
| PCT/JP2023/026844 WO2024053267A1 (ja) | 2022-09-06 | 2023-07-21 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024053267A1 true JPWO2024053267A1 (https=) | 2024-03-14 |
| JPWO2024053267A5 JPWO2024053267A5 (https=) | 2025-05-16 |
Family
ID=90192408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024545483A Pending JPWO2024053267A1 (https=) | 2022-09-06 | 2023-07-21 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024053267A1 (https=) |
| WO (1) | WO2024053267A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5580150B2 (ja) * | 2010-09-09 | 2014-08-27 | 株式会社東芝 | 半導体装置 |
| US8759908B2 (en) * | 2011-11-01 | 2014-06-24 | Alpha And Omega Semiconductor Incorporated | Two-dimensional shielded gate transistor device and method of manufacture |
| US9252263B1 (en) * | 2014-07-31 | 2016-02-02 | Infineon Technologies Austria Ag | Multiple semiconductor device trenches per cell pitch |
| JP2021192400A (ja) * | 2020-06-05 | 2021-12-16 | ローム株式会社 | 半導体装置 |
| JP7365306B2 (ja) * | 2020-09-09 | 2023-10-19 | 株式会社東芝 | 半導体装置 |
-
2023
- 2023-07-21 WO PCT/JP2023/026844 patent/WO2024053267A1/ja not_active Ceased
- 2023-07-21 JP JP2024545483A patent/JPWO2024053267A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024053267A1 (ja) | 2024-03-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250115 |