JPWO2021100206A5 - - Google Patents

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Publication number
JPWO2021100206A5
JPWO2021100206A5 JP2021558148A JP2021558148A JPWO2021100206A5 JP WO2021100206 A5 JPWO2021100206 A5 JP WO2021100206A5 JP 2021558148 A JP2021558148 A JP 2021558148A JP 2021558148 A JP2021558148 A JP 2021558148A JP WO2021100206 A5 JPWO2021100206 A5 JP WO2021100206A5
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JP
Japan
Prior art keywords
region
trench
electric field
field relaxation
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021558148A
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English (en)
Japanese (ja)
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JPWO2021100206A1 (https=
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Priority claimed from PCT/JP2019/045858 external-priority patent/WO2021100206A1/ja
Publication of JPWO2021100206A1 publication Critical patent/JPWO2021100206A1/ja
Publication of JPWO2021100206A5 publication Critical patent/JPWO2021100206A5/ja
Pending legal-status Critical Current

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JP2021558148A 2019-11-22 2019-11-22 Pending JPWO2021100206A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/045858 WO2021100206A1 (ja) 2019-11-22 2019-11-22 スイッチング素子

Publications (2)

Publication Number Publication Date
JPWO2021100206A1 JPWO2021100206A1 (https=) 2021-05-27
JPWO2021100206A5 true JPWO2021100206A5 (https=) 2022-01-21

Family

ID=75981529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021558148A Pending JPWO2021100206A1 (https=) 2019-11-22 2019-11-22

Country Status (4)

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US (2) US12471312B2 (https=)
JP (1) JPWO2021100206A1 (https=)
CN (2) CN114762128B (https=)
WO (1) WO2021100206A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024135369A (ja) * 2023-03-22 2024-10-04 株式会社東芝 半導体装置
CN119029042B (zh) * 2024-08-15 2025-09-19 长飞先进半导体(武汉)有限公司 一种半导体器件、制备方法、功率模块、转换电路和车辆
CN119730290B (zh) * 2025-02-28 2025-06-20 强华时代(成都)科技有限公司 一种降低栅氧电场的沟槽栅SiC MOSFET的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4798119B2 (ja) * 2007-11-06 2011-10-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP4577355B2 (ja) 2007-12-26 2010-11-10 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP4640436B2 (ja) * 2008-04-14 2011-03-02 株式会社デンソー 炭化珪素半導体装置の製造方法
JP2012169384A (ja) * 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
US9306061B2 (en) * 2013-03-13 2016-04-05 Cree, Inc. Field effect transistor devices with protective regions
DE112016004086T5 (de) * 2015-09-09 2018-06-14 Sumitomo Electric Industries, Ltd. Halbleiterbauelement
JP7327905B2 (ja) * 2017-07-07 2023-08-16 株式会社デンソー 半導体装置およびその製造方法

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