JP2018067650A - スイッチング素子 - Google Patents
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- JP2018067650A JP2018067650A JP2016205797A JP2016205797A JP2018067650A JP 2018067650 A JP2018067650 A JP 2018067650A JP 2016205797 A JP2016205797 A JP 2016205797A JP 2016205797 A JP2016205797 A JP 2016205797A JP 2018067650 A JP2018067650 A JP 2018067650A
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 71
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 210000000746 body region Anatomy 0.000 claims abstract description 29
- 230000005684 electric field Effects 0.000 abstract description 18
- 230000002040 relaxant effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 140
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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Abstract
【解決手段】 スイッチング素子であって、上面に複数のゲートトレンチが設けられている半導体基板と、ゲートトレンチの底面を覆う底部絶縁層と、ゲートトレンチの側面を覆うゲート絶縁層と、ゲートトレンチの内部に配置されている複数のゲート電極を有する。素子領域の中央部内のゲート絶縁層が、第1誘電率を有するとともに第1の厚みを有し、素子領域の外周部内のゲート絶縁層の少なくとも一部が、第1誘電率よりも大きい第2誘電率を有するとともに第1の厚みよりも厚い第2の厚みを有する。半導体基板が、ゲート絶縁層に接する第1導電型の第1領域と、第1領域の下側でゲート絶縁層に接する第2導電型のボディ領域と、ボディ領域の下側でゲート絶縁層に接する第1導電型の第2領域を有する。
【選択図】図1
Description
12 :半導体基板
22 :トレンチ
24 :底部絶縁層
25 :ゲート絶縁層
26 :ゲート電極
28 :層間絶縁膜
30 :ソース領域
32 :ボディ領域
32a :高濃度領域
32b :低濃度領域
34 :ドリフト領域
35 :ドレイン領域
50 :素子領域
50a :中央部
50b :外周部
70 :上部電極
72 :下部電極
Claims (5)
- スイッチング素子であって、
上面に複数のゲートトレンチが設けられている半導体基板と、
前記複数のゲートトレンチの底面を覆う底部絶縁層と、
前記複数のゲートトレンチの側面を覆うゲート絶縁層と、
前記複数のゲートトレンチの内部に配置されており、前記底部絶縁層と前記ゲート絶縁層によって前記半導体基板から絶縁されている複数のゲート電極、
を有し、
前記上面において前記複数のゲートトレンチが設けられている素子領域が、その外周縁に位置する外周部と、前記外周部に囲まれた中央部を有し、
前記中央部内の前記ゲート絶縁層が、第1誘電率を有するとともに第1の厚みを有し、
前記外周部内の前記ゲート絶縁層の少なくとも一部が、前記第1誘電率よりも大きい第2誘電率を有するとともに前記第1の厚みよりも厚い第2の厚みを有し、
前記半導体基板が、
前記中央部と前記外周部において、前記複数のゲートトレンチの内部の前記ゲート絶縁層に接する第1導電型の第1領域と、
前記中央部と前記外周部において、前記第1領域の下側で前記複数のゲートトレンチの内部の前記ゲート絶縁層に接する第2導電型のボディ領域と、
前記中央部と前記外周部において、前記ボディ領域の下側で前記複数のゲートトレンチの内部の前記ゲート絶縁層に接する第1導電型の第2領域、
を有する、
スイッチング素子。 - 前記複数のゲートトレンチが、一方向に直線状に伸びる複数の直線部を有し、
前記複数の直線部が、前記一方向に直交する方向に間隔を開けて配置されている、
請求項1のスイッチング素子。 - 前記複数の直線部のうちの最も端に位置する2つの直線部の内部の前記ゲート絶縁層が、その2つの直線部の内部の全体で、前記第2誘電率を有するとともに前記第2の厚みを有する請求項2のスイッチング素子。
- 前記複数の直線部の長手方向の端部に位置する前記ゲート絶縁層が、前記第2誘電率を有するとともに前記第2の厚みを有する請求項2または3のスイッチング素子。
- 前記ゲート絶縁層の厚みが、前記第1の厚みを有する部分から前記第2の厚みを有する部分に向かうにしたがって徐々に厚くなり、
前記ゲート絶縁層の誘電率が、前記第1の厚みを有する部分から前記第2の厚みを有する部分に向かうにしたがって徐々に大きくなる、
請求項1〜4のいずれか一項のスイッチング素子。
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JP2016205797A JP6669628B2 (ja) | 2016-10-20 | 2016-10-20 | スイッチング素子 |
US15/684,057 US10170470B2 (en) | 2016-10-20 | 2017-08-23 | Switching device |
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JP2016205797A JP6669628B2 (ja) | 2016-10-20 | 2016-10-20 | スイッチング素子 |
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WO2020235676A1 (ja) * | 2019-05-23 | 2020-11-26 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
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JP6560141B2 (ja) * | 2016-02-26 | 2019-08-14 | トヨタ自動車株式会社 | スイッチング素子 |
JP6560142B2 (ja) * | 2016-02-26 | 2019-08-14 | トヨタ自動車株式会社 | スイッチング素子 |
US11257916B2 (en) * | 2019-03-14 | 2022-02-22 | Semiconductor Components Industries, Llc | Electronic device having multi-thickness gate insulator |
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