JP7752780B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

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Publication number
JP7752780B2
JP7752780B2 JP2024545340A JP2024545340A JP7752780B2 JP 7752780 B2 JP7752780 B2 JP 7752780B2 JP 2024545340 A JP2024545340 A JP 2024545340A JP 2024545340 A JP2024545340 A JP 2024545340A JP 7752780 B2 JP7752780 B2 JP 7752780B2
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JP
Japan
Prior art keywords
gate
layer
insulating film
trench
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024545340A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024053022A1 (https=
JPWO2024053022A5 (https=
Inventor
皓洋 小山
俊明 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2024053022A1 publication Critical patent/JPWO2024053022A1/ja
Publication of JPWO2024053022A5 publication Critical patent/JPWO2024053022A5/ja
Application granted granted Critical
Publication of JP7752780B2 publication Critical patent/JP7752780B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/415—Insulated-gate bipolar transistors [IGBT] having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2024545340A 2022-09-07 2022-09-07 半導体装置およびその製造方法 Active JP7752780B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/033581 WO2024053022A1 (ja) 2022-09-07 2022-09-07 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JPWO2024053022A1 JPWO2024053022A1 (https=) 2024-03-14
JPWO2024053022A5 JPWO2024053022A5 (https=) 2025-01-08
JP7752780B2 true JP7752780B2 (ja) 2025-10-10

Family

ID=90192496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024545340A Active JP7752780B2 (ja) 2022-09-07 2022-09-07 半導体装置およびその製造方法

Country Status (4)

Country Link
JP (1) JP7752780B2 (https=)
CN (1) CN119769193A (https=)
DE (1) DE112022007744T5 (https=)
WO (1) WO2024053022A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007189192A (ja) 2005-12-15 2007-07-26 Toshiba Corp 半導体装置
JP2011199109A (ja) 2010-03-23 2011-10-06 Renesas Electronics Corp パワーｍｏｓｆｅｔ
WO2012127821A1 (ja) 2011-03-23 2012-09-27 パナソニック株式会社 半導体装置およびその製造方法
JP2014033079A (ja) 2012-08-03 2014-02-20 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
JP2015230932A (ja) 2014-06-04 2015-12-21 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
WO2016047438A1 (ja) 2014-09-26 2016-03-31 三菱電機株式会社 半導体装置
JP2016152357A (ja) 2015-02-18 2016-08-22 株式会社東芝 半導体装置および半導体パッケージ
WO2017138215A1 (ja) 2016-02-09 2017-08-17 三菱電機株式会社 半導体装置
WO2020031971A1 (ja) 2018-08-07 2020-02-13 ローム株式会社 ＳｉＣ半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007189192A (ja) 2005-12-15 2007-07-26 Toshiba Corp 半導体装置
JP2011199109A (ja) 2010-03-23 2011-10-06 Renesas Electronics Corp パワーｍｏｓｆｅｔ
WO2012127821A1 (ja) 2011-03-23 2012-09-27 パナソニック株式会社 半導体装置およびその製造方法
JP2014033079A (ja) 2012-08-03 2014-02-20 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
JP2015230932A (ja) 2014-06-04 2015-12-21 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
WO2016047438A1 (ja) 2014-09-26 2016-03-31 三菱電機株式会社 半導体装置
JP2016152357A (ja) 2015-02-18 2016-08-22 株式会社東芝 半導体装置および半導体パッケージ
WO2017138215A1 (ja) 2016-02-09 2017-08-17 三菱電機株式会社 半導体装置
WO2020031971A1 (ja) 2018-08-07 2020-02-13 ローム株式会社 ＳｉＣ半導体装置

Also Published As

Publication number Publication date
JPWO2024053022A1 (https=) 2024-03-14
DE112022007744T5 (de) 2025-06-18
WO2024053022A1 (ja) 2024-03-14
CN119769193A (zh) 2025-04-04

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