JPWO2023188756A5 - - Google Patents

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Publication number
JPWO2023188756A5
JPWO2023188756A5 JP2024511307A JP2024511307A JPWO2023188756A5 JP WO2023188756 A5 JPWO2023188756 A5 JP WO2023188756A5 JP 2024511307 A JP2024511307 A JP 2024511307A JP 2024511307 A JP2024511307 A JP 2024511307A JP WO2023188756 A5 JPWO2023188756 A5 JP WO2023188756A5
Authority
JP
Japan
Prior art keywords
conductive portion
gate electrode
semiconductor device
gate
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024511307A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023188756A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/002430 external-priority patent/WO2023188756A1/ja
Publication of JPWO2023188756A1 publication Critical patent/JPWO2023188756A1/ja
Publication of JPWO2023188756A5 publication Critical patent/JPWO2023188756A5/ja
Pending legal-status Critical Current

Links

JP2024511307A 2022-03-28 2023-01-26 Pending JPWO2023188756A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022051510 2022-03-28
PCT/JP2023/002430 WO2023188756A1 (ja) 2022-03-28 2023-01-26 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023188756A1 JPWO2023188756A1 (https=) 2023-10-05
JPWO2023188756A5 true JPWO2023188756A5 (https=) 2024-12-09

Family

ID=88200795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024511307A Pending JPWO2023188756A1 (https=) 2022-03-28 2023-01-26

Country Status (3)

Country Link
US (1) US20250015176A1 (https=)
JP (1) JPWO2023188756A1 (https=)
WO (1) WO2023188756A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023100500A1 (https=) * 2021-11-30 2023-06-08

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8362550B2 (en) * 2011-01-20 2013-01-29 Fairchild Semiconductor Corporation Trench power MOSFET with reduced on-resistance
JP6164636B2 (ja) * 2013-03-05 2017-07-19 ローム株式会社 半導体装置
JP6666671B2 (ja) * 2015-08-24 2020-03-18 ローム株式会社 半導体装置
TWI577010B (zh) * 2016-05-18 2017-04-01 杰力科技股份有限公司 功率金氧半導體場效電晶體
JP2018133579A (ja) * 2018-04-18 2018-08-23 ローム株式会社 半導体装置

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