JP7834008B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP7834008B2
JP7834008B2 JP2022179333A JP2022179333A JP7834008B2 JP 7834008 B2 JP7834008 B2 JP 7834008B2 JP 2022179333 A JP2022179333 A JP 2022179333A JP 2022179333 A JP2022179333 A JP 2022179333A JP 7834008 B2 JP7834008 B2 JP 7834008B2
Authority
JP
Japan
Prior art keywords
electrode
region
channel stopper
insulating film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022179333A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024068760A (ja
JP2024068760A5 (https=
Inventor
康一 西
哲也 新田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2022179333A priority Critical patent/JP7834008B2/ja
Priority to US18/453,932 priority patent/US20240153989A1/en
Priority to DE102023125588.6A priority patent/DE102023125588A1/de
Priority to CN202311456805.2A priority patent/CN118016687A/zh
Publication of JP2024068760A publication Critical patent/JP2024068760A/ja
Publication of JP2024068760A5 publication Critical patent/JP2024068760A5/ja
Application granted granted Critical
Publication of JP7834008B2 publication Critical patent/JP7834008B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2022179333A 2022-11-09 2022-11-09 半導体装置 Active JP7834008B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022179333A JP7834008B2 (ja) 2022-11-09 2022-11-09 半導体装置
US18/453,932 US20240153989A1 (en) 2022-11-09 2023-08-22 Semiconductor device
DE102023125588.6A DE102023125588A1 (de) 2022-11-09 2023-09-21 Halbleitervorrichtung
CN202311456805.2A CN118016687A (zh) 2022-11-09 2023-11-03 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022179333A JP7834008B2 (ja) 2022-11-09 2022-11-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2024068760A JP2024068760A (ja) 2024-05-21
JP2024068760A5 JP2024068760A5 (https=) 2024-11-25
JP7834008B2 true JP7834008B2 (ja) 2026-03-23

Family

ID=90928146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022179333A Active JP7834008B2 (ja) 2022-11-09 2022-11-09 半導体装置

Country Status (4)

Country Link
US (1) US20240153989A1 (https=)
JP (1) JP7834008B2 (https=)
CN (1) CN118016687A (https=)
DE (1) DE102023125588A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7485164B2 (ja) * 2021-12-03 2024-05-16 株式会社三洋物産 遊技機
JP7485162B2 (ja) * 2021-12-03 2024-05-16 株式会社三洋物産 遊技機
JP7485163B2 (ja) * 2021-12-03 2024-05-16 株式会社三洋物産 遊技機
JP2024098458A (ja) * 2023-01-10 2024-07-23 富士電機株式会社 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245281A (ja) 2009-04-06 2010-10-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2015104900A1 (ja) 2014-01-10 2015-07-16 三菱電機株式会社 半導体装置
JP2020068244A (ja) 2018-10-23 2020-04-30 三菱電機株式会社 半導体装置、および、半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585331B2 (ja) * 1986-12-26 1997-02-26 株式会社東芝 高耐圧プレーナ素子
US8564088B2 (en) * 2008-08-19 2013-10-22 Infineon Technologies Austria Ag Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region
JP5515922B2 (ja) * 2010-03-24 2014-06-11 富士電機株式会社 半導体装置
JP5640969B2 (ja) * 2011-12-26 2014-12-17 三菱電機株式会社 半導体素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245281A (ja) 2009-04-06 2010-10-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2015104900A1 (ja) 2014-01-10 2015-07-16 三菱電機株式会社 半導体装置
JP2020068244A (ja) 2018-10-23 2020-04-30 三菱電機株式会社 半導体装置、および、半導体装置の製造方法

Also Published As

Publication number Publication date
JP2024068760A (ja) 2024-05-21
DE102023125588A1 (de) 2024-05-16
US20240153989A1 (en) 2024-05-09
CN118016687A (zh) 2024-05-10

Similar Documents

Publication Publication Date Title
JP7834008B2 (ja) 半導体装置
US10510843B2 (en) Insulated gate silicon carbide semiconductor device and method for manufacturing same
JP6320545B2 (ja) 半導体装置
US7723783B2 (en) Semiconductor device
US8872264B2 (en) Semiconductor device having a floating semiconductor zone
JP6475635B2 (ja) ゲート酸化膜層において電界を低下させた半導体デバイス
JP6532549B2 (ja) 半導体装置
US11588045B2 (en) Fortified trench planar MOS power transistor
US20060216896A1 (en) Semiconductor device and method for manufacturing same
US9048215B2 (en) Semiconductor device having a high breakdown voltage
KR102815770B1 (ko) Finfet 전력 반도체 디바이스들
JP2002353452A (ja) 電力用半導体素子
JP7512920B2 (ja) 半導体装置およびその製造方法
JP2013069783A (ja) 電力用半導体装置
US11264475B2 (en) Semiconductor device having a gate electrode formed in a trench structure
US20240072132A1 (en) Semiconductor device and method of manufacturing the same
KR101127501B1 (ko) 트렌치 게이트 구조를 가지는 전력 반도체 소자
US20240379838A1 (en) Vertical mosfet using a silicon carbide layer and a silicon layer for improved performance
US20250120133A1 (en) Gate trench power semiconductor devices having deep support shields and methods of fabricating such device
WO2022199955A1 (en) Power semiconductor device and method for producing a power semiconductor device
CN113871452A (zh) 半导体器件
KR101870826B1 (ko) 전력 반도체 소자 및 그 제조방법
US12615794B2 (en) Semiconductor device and method of manufacturing the same
US20240097015A1 (en) Semiconductor device and method of manufacturing the same
US20250338547A1 (en) Gate trench power semiconductor devices having split gate electrodes

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241115

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241115

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250829

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250909

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251105

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260210

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260310

R150 Certificate of patent or registration of utility model

Ref document number: 7834008

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150