JPWO2025004543A5 - - Google Patents

Info

Publication number
JPWO2025004543A5
JPWO2025004543A5 JP2025529484A JP2025529484A JPWO2025004543A5 JP WO2025004543 A5 JPWO2025004543 A5 JP WO2025004543A5 JP 2025529484 A JP2025529484 A JP 2025529484A JP 2025529484 A JP2025529484 A JP 2025529484A JP WO2025004543 A5 JPWO2025004543 A5 JP WO2025004543A5
Authority
JP
Japan
Prior art keywords
impurity region
semiconductor device
trench
field relaxation
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025529484A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025004543A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/017093 external-priority patent/WO2025004543A1/ja
Publication of JPWO2025004543A1 publication Critical patent/JPWO2025004543A1/ja
Publication of JPWO2025004543A5 publication Critical patent/JPWO2025004543A5/ja
Pending legal-status Critical Current

Links

JP2025529484A 2023-06-26 2024-05-08 Pending JPWO2025004543A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023104405 2023-06-26
PCT/JP2024/017093 WO2025004543A1 (ja) 2023-06-26 2024-05-08 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2025004543A1 JPWO2025004543A1 (https=) 2025-01-02
JPWO2025004543A5 true JPWO2025004543A5 (https=) 2026-03-26

Family

ID=93938240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025529484A Pending JPWO2025004543A1 (https=) 2023-06-26 2024-05-08

Country Status (3)

Country Link
US (1) US20260101548A1 (https=)
JP (1) JPWO2025004543A1 (https=)
WO (1) WO2025004543A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6270799B2 (ja) * 2011-05-16 2018-01-31 ルネサスエレクトロニクス株式会社 半導体装置
JP2016201563A (ja) * 2016-07-26 2016-12-01 ルネサスエレクトロニクス株式会社 狭アクティブセルｉｅ型トレンチゲートｉｇｂｔ
US10319808B2 (en) * 2017-04-03 2019-06-11 Fuji Electric Co., Ltd. Semiconductor device
JP7331914B2 (ja) * 2017-12-11 2023-08-23 富士電機株式会社 絶縁ゲート型半導体装置及びその製造方法
JP7512624B2 (ja) * 2020-03-17 2024-07-09 富士電機株式会社 炭化珪素半導体装置
JP7456520B2 (ja) * 2020-12-07 2024-03-27 富士電機株式会社 半導体装置

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