JPWO2023224059A5 - - Google Patents

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Publication number
JPWO2023224059A5
JPWO2023224059A5 JP2024521959A JP2024521959A JPWO2023224059A5 JP WO2023224059 A5 JPWO2023224059 A5 JP WO2023224059A5 JP 2024521959 A JP2024521959 A JP 2024521959A JP 2024521959 A JP2024521959 A JP 2024521959A JP WO2023224059 A5 JPWO2023224059 A5 JP WO2023224059A5
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Japan
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region
doping concentration
semiconductor device
collector
contact
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JP2024521959A
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English (en)
Japanese (ja)
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JP7683822B2 (ja
JPWO2023224059A1 (https=
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Priority claimed from PCT/JP2023/018390 external-priority patent/WO2023224059A1/ja
Publication of JPWO2023224059A1 publication Critical patent/JPWO2023224059A1/ja
Publication of JPWO2023224059A5 publication Critical patent/JPWO2023224059A5/ja
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Publication of JP7683822B2 publication Critical patent/JP7683822B2/ja
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JP2024521959A 2022-05-18 2023-05-17 半導体装置 Active JP7683822B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022081725 2022-05-18
JP2022081725 2022-05-18
PCT/JP2023/018390 WO2023224059A1 (ja) 2022-05-18 2023-05-17 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2023224059A1 JPWO2023224059A1 (https=) 2023-11-23
JPWO2023224059A5 true JPWO2023224059A5 (https=) 2024-07-19
JP7683822B2 JP7683822B2 (ja) 2025-05-27

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ID=88835644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024521959A Active JP7683822B2 (ja) 2022-05-18 2023-05-17 半導体装置

Country Status (5)

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US (1) US20240274663A1 (https=)
JP (1) JP7683822B2 (https=)
CN (1) CN118216005A (https=)
DE (1) DE112023000230T5 (https=)
WO (1) WO2023224059A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024098458A (ja) * 2023-01-10 2024-07-23 富士電機株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2663679B2 (ja) * 1990-04-20 1997-10-15 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
JP3325752B2 (ja) * 1995-12-11 2002-09-17 三菱電機株式会社 半導体装置およびその製造方法
JP4393053B2 (ja) * 2002-10-25 2010-01-06 株式会社豊田中央研究所 バイポーラ型半導体装置とその製造方法
JP2012059734A (ja) * 2010-09-03 2012-03-22 Panasonic Corp 半導体装置及びその製造方法
JP2015023118A (ja) 2013-07-18 2015-02-02 株式会社東芝 半導体装置
JP6677615B2 (ja) 2016-09-20 2020-04-08 株式会社東芝 半導体装置
DE112019000094T5 (de) * 2018-03-19 2020-09-24 Fuji Electric Co., Ltd. Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung

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