DE112021000202T5 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE112021000202T5
DE112021000202T5 DE112021000202.3T DE112021000202T DE112021000202T5 DE 112021000202 T5 DE112021000202 T5 DE 112021000202T5 DE 112021000202 T DE112021000202 T DE 112021000202T DE 112021000202 T5 DE112021000202 T5 DE 112021000202T5
Authority
DE
Germany
Prior art keywords
region
trench
trench portion
semiconductor device
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021000202.3T
Other languages
German (de)
English (en)
Inventor
Kaname MITSUZUKA
Yuki Karamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE112021000202T5 publication Critical patent/DE112021000202T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE112021000202.3T 2020-07-03 2021-04-01 Halbleitervorrichtung Pending DE112021000202T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-115759 2020-07-03
JP2020115759 2020-07-03
PCT/JP2021/014138 WO2022004084A1 (ja) 2020-07-03 2021-04-01 半導体装置

Publications (1)

Publication Number Publication Date
DE112021000202T5 true DE112021000202T5 (de) 2022-08-18

Family

ID=79315725

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021000202.3T Pending DE112021000202T5 (de) 2020-07-03 2021-04-01 Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US20220328669A1 (https=)
JP (3) JP7327672B2 (https=)
CN (1) CN114846622A (https=)
DE (1) DE112021000202T5 (https=)
WO (1) WO2022004084A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11276686B2 (en) * 2019-05-15 2022-03-15 Fuji Electric Co., Ltd. Semiconductor device
WO2021254615A1 (en) * 2020-06-18 2021-12-23 Dynex Semiconductor Limited Reverse conducting igbt with controlled anode injection
JP7456520B2 (ja) * 2020-12-07 2024-03-27 富士電機株式会社 半導体装置
JP2023113080A (ja) 2022-02-02 2023-08-15 富士電機株式会社 半導体装置および半導体装置の製造方法
KR20230150663A (ko) * 2022-04-22 2023-10-31 현대모비스 주식회사 전력 반도체 소자, 이를 포함하는 전력 반도체 칩 및 이의 제조 방법
JP2024009540A (ja) * 2022-07-11 2024-01-23 富士電機株式会社 半導体装置
JP2024097277A (ja) * 2023-01-05 2024-07-18 富士電機株式会社 半導体装置
JPWO2024241741A1 (https=) * 2023-05-23 2024-11-28
CN117497574B (zh) * 2023-08-31 2024-05-14 海信家电集团股份有限公司 半导体装置
WO2025170006A1 (ja) * 2024-02-09 2025-08-14 富士電機株式会社 半導体装置
WO2026058816A1 (ja) * 2024-09-12 2026-03-19 ローム株式会社 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018052098A1 (ja) 2016-09-14 2018-03-22 富士電機株式会社 半導体装置およびその製造方法
JP2018195798A (ja) 2017-05-16 2018-12-06 富士電機株式会社 半導体装置

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FR2703831A1 (fr) * 1993-04-07 1994-10-14 Philips Composants Dispositif semiconducteur comprenant un transistor latéral.
JP2009283540A (ja) 2008-05-20 2009-12-03 Denso Corp 炭化珪素半導体装置およびその製造方法
WO2009154882A2 (en) 2008-06-20 2009-12-23 Maxpower Semiconductor Inc. Semiconductor power switches having trench gates
WO2012006261A2 (en) 2010-07-06 2012-01-12 Maxpower Semiconductor Inc. Power semiconductor devices, structures, and related methods
JP2012178389A (ja) * 2011-02-25 2012-09-13 Renesas Electronics Corp 半導体装置
JP6190206B2 (ja) * 2012-08-21 2017-08-30 ローム株式会社 半導体装置
JP6440989B2 (ja) * 2013-08-28 2018-12-19 ローム株式会社 半導体装置
US9960165B2 (en) * 2013-11-05 2018-05-01 Toyota Jidosha Kabushiki Kaisha Semiconductor device having adjacent IGBT and diode regions with a shifted boundary plane between a collector region and a cathode region
DE102014117780B4 (de) * 2014-12-03 2018-06-21 Infineon Technologies Ag Halbleiterbauelement mit einer Grabenelektrode und Verfahren zur Herstellung
CN106663692B (zh) * 2015-02-03 2020-03-06 富士电机株式会社 半导体装置及其制造方法
JP6817777B2 (ja) 2015-12-16 2021-01-20 ローム株式会社 半導体装置
CN107924951B (zh) * 2016-03-10 2021-11-23 富士电机株式会社 半导体装置
JP6885101B2 (ja) * 2016-03-11 2021-06-09 富士電機株式会社 半導体装置
JP6854598B2 (ja) * 2016-07-06 2021-04-07 ローム株式会社 半導体装置
JP6958011B2 (ja) * 2017-06-15 2021-11-02 富士電機株式会社 半導体装置および半導体装置の製造方法
CN109256417B (zh) * 2017-07-14 2023-10-24 富士电机株式会社 半导体装置
JP7143575B2 (ja) * 2017-07-18 2022-09-29 富士電機株式会社 半導体装置
JP6958093B2 (ja) * 2017-08-09 2021-11-02 富士電機株式会社 半導体装置
CN109524396B (zh) * 2017-09-20 2023-05-12 株式会社东芝 半导体装置
JP7151076B2 (ja) * 2017-12-11 2022-10-12 富士電機株式会社 絶縁ゲート型半導体装置
CN111033751B (zh) * 2018-02-14 2023-08-18 富士电机株式会社 半导体装置
JP6984732B2 (ja) * 2018-03-15 2021-12-22 富士電機株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018052098A1 (ja) 2016-09-14 2018-03-22 富士電機株式会社 半導体装置およびその製造方法
JP2018195798A (ja) 2017-05-16 2018-12-06 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
JP7726248B2 (ja) 2025-08-20
JPWO2022004084A1 (https=) 2022-01-06
US20220328669A1 (en) 2022-10-13
JP7327672B2 (ja) 2023-08-16
CN114846622A (zh) 2022-08-02
JP2025160397A (ja) 2025-10-22
WO2022004084A1 (ja) 2022-01-06
JP2023139265A (ja) 2023-10-03

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