DE112017001965T5 - Verfahren zur Bestimmung der Kohlenstoffkonzentration einer Siliciumprobe, Verfahren zur Herstellung eines Siliciumeinkristallingots, Siliciumeinkristallingot sowie Siliciumwafer - Google Patents
Verfahren zur Bestimmung der Kohlenstoffkonzentration einer Siliciumprobe, Verfahren zur Herstellung eines Siliciumeinkristallingots, Siliciumeinkristallingot sowie Siliciumwafer Download PDFInfo
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- DE112017001965T5 DE112017001965T5 DE112017001965.6T DE112017001965T DE112017001965T5 DE 112017001965 T5 DE112017001965 T5 DE 112017001965T5 DE 112017001965 T DE112017001965 T DE 112017001965T DE 112017001965 T5 DE112017001965 T5 DE 112017001965T5
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- silicon
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- Granted
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- 0 CCCCNCCO*(C)IC Chemical compound CCCCNCCO*(C)IC 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/24—Investigating the presence of flaws
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N31/00—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods
- G01N31/12—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using combustion
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Combustion & Propulsion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016078579A JP6528710B2 (ja) | 2016-04-11 | 2016-04-11 | シリコン試料の炭素濃度測定方法およびシリコン単結晶インゴットの製造方法 |
| JP2016-078579 | 2016-04-11 | ||
| PCT/JP2017/001443 WO2017179254A1 (ja) | 2016-04-11 | 2017-01-18 | シリコン試料の炭素濃度測定方法、シリコン単結晶インゴットの製造方法、シリコン単結晶インゴットおよびシリコンウェーハ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112017001965T5 true DE112017001965T5 (de) | 2019-01-17 |
Family
ID=60042450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112017001965.6T Granted DE112017001965T5 (de) | 2016-04-11 | 2017-01-18 | Verfahren zur Bestimmung der Kohlenstoffkonzentration einer Siliciumprobe, Verfahren zur Herstellung eines Siliciumeinkristallingots, Siliciumeinkristallingot sowie Siliciumwafer |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10935510B2 (https=) |
| JP (1) | JP6528710B2 (https=) |
| KR (1) | KR102170149B1 (https=) |
| CN (1) | CN108886005B (https=) |
| DE (1) | DE112017001965T5 (https=) |
| TW (1) | TWI650823B (https=) |
| WO (1) | WO2017179254A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6531729B2 (ja) | 2016-07-19 | 2019-06-19 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
| JP6689494B2 (ja) * | 2017-03-16 | 2020-04-28 | 信越半導体株式会社 | シリコン中の炭素検出方法 |
| JP6838713B2 (ja) * | 2018-02-07 | 2021-03-03 | 信越半導体株式会社 | シリコン結晶中の炭素濃度測定方法 |
| JP6950581B2 (ja) * | 2018-02-28 | 2021-10-13 | 株式会社Sumco | シリコン単結晶の製造方法およびシリコン単結晶の引き上げ装置 |
| JP6977619B2 (ja) * | 2018-02-28 | 2021-12-08 | 株式会社Sumco | シリコン単結晶の酸素濃度推定方法、およびシリコン単結晶の製造方法 |
| JP6950639B2 (ja) * | 2018-07-20 | 2021-10-13 | 株式会社Sumco | シリコン単結晶の炭素濃度測定方法及び装置 |
| JP6645545B1 (ja) * | 2018-09-03 | 2020-02-14 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
| JP6645546B1 (ja) * | 2018-09-03 | 2020-02-14 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
| JP7230746B2 (ja) * | 2019-09-02 | 2023-03-01 | 株式会社Sumco | 単結晶シリコンの酸素濃度又は炭素濃度の測定方法 |
| CN113755944A (zh) * | 2020-06-05 | 2021-12-07 | 西安奕斯伟材料科技有限公司 | 一种单晶炉热场结构、单晶炉及晶棒 |
| JP7452314B2 (ja) | 2020-07-31 | 2024-03-19 | 信越半導体株式会社 | Fz用シリコン原料結晶の製造方法及びfz用シリコン原料結晶の製造システム |
| JP7413992B2 (ja) * | 2020-12-28 | 2024-01-16 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
| JP7447786B2 (ja) * | 2020-12-28 | 2024-03-12 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
| CN112786472B (zh) * | 2021-01-06 | 2023-01-10 | 电子科技大学 | 一种介电温度系数修正的深能级瞬态谱测试方法 |
| JP7626052B2 (ja) * | 2021-12-20 | 2025-02-04 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
| CN114544855B (zh) * | 2022-02-08 | 2024-02-02 | 内蒙古众元测试技术有限公司 | 一种废物中非金属元素含量的检测装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013152977A (ja) | 2012-01-24 | 2013-08-08 | Mitsubishi Electric Corp | 不純物濃度測定方法および不純物濃度測定装置 |
| JP2015101529A (ja) | 2013-11-28 | 2015-06-04 | 信越半導体株式会社 | シリコン単結晶の炭素濃度測定方法 |
| JP2015222801A (ja) | 2014-05-23 | 2015-12-10 | グローバルウェーハズ・ジャパン株式会社 | 検量線の作成方法、不純物濃度の測定方法、及び半導体ウェハの製造方法 |
| JP2016078579A (ja) | 2014-10-15 | 2016-05-16 | 秋雄 大坪 | 帆走/漕走兼用ボード |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07297246A (ja) * | 1994-04-27 | 1995-11-10 | Hitachi Ltd | シリコン半導体の金属汚染モニタ方法 |
| JP2003045928A (ja) | 2001-07-31 | 2003-02-14 | Shin Etsu Handotai Co Ltd | 半導体シリコンウェーハ中のCu汚染評価方法 |
| JP4760729B2 (ja) * | 2006-02-21 | 2011-08-31 | 株式会社Sumco | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
| JP5524894B2 (ja) * | 2011-04-04 | 2014-06-18 | 信越化学工業株式会社 | 多結晶シリコン中の炭素濃度測定方法 |
| KR101419751B1 (ko) * | 2012-10-18 | 2014-07-15 | 주식회사 위닉스 | 순간 냉각장치 |
| JP6107068B2 (ja) | 2012-11-13 | 2017-04-05 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法 |
| JP5921498B2 (ja) * | 2013-07-12 | 2016-05-24 | グローバルウェーハズ・ジャパン株式会社 | シリコン単結晶の製造方法 |
| JP6048381B2 (ja) * | 2013-12-06 | 2016-12-21 | 信越半導体株式会社 | シリコン単結晶中の炭素濃度評価方法、及び、半導体デバイスの製造方法 |
| JP6075307B2 (ja) | 2014-02-20 | 2017-02-08 | 信越半導体株式会社 | シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法 |
| JP6300104B2 (ja) * | 2014-12-02 | 2018-03-28 | 信越半導体株式会社 | シリコン結晶の炭素濃度測定方法、シリコン結晶の炭素関連準位測定方法 |
| JP6631498B2 (ja) | 2016-12-26 | 2020-01-15 | 株式会社Sumco | シリコン材料製造工程の評価方法およびシリコン材料の製造方法 |
-
2016
- 2016-04-11 JP JP2016078579A patent/JP6528710B2/ja active Active
-
2017
- 2017-01-18 US US16/092,364 patent/US10935510B2/en active Active
- 2017-01-18 DE DE112017001965.6T patent/DE112017001965T5/de active Granted
- 2017-01-18 KR KR1020187029989A patent/KR102170149B1/ko active Active
- 2017-01-18 CN CN201780020471.0A patent/CN108886005B/zh active Active
- 2017-01-18 WO PCT/JP2017/001443 patent/WO2017179254A1/ja not_active Ceased
- 2017-02-10 TW TW106104368A patent/TWI650823B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013152977A (ja) | 2012-01-24 | 2013-08-08 | Mitsubishi Electric Corp | 不純物濃度測定方法および不純物濃度測定装置 |
| JP2015101529A (ja) | 2013-11-28 | 2015-06-04 | 信越半導体株式会社 | シリコン単結晶の炭素濃度測定方法 |
| JP2015222801A (ja) | 2014-05-23 | 2015-12-10 | グローバルウェーハズ・ジャパン株式会社 | 検量線の作成方法、不純物濃度の測定方法、及び半導体ウェハの製造方法 |
| JP2016078579A (ja) | 2014-10-15 | 2016-05-16 | 秋雄 大坪 | 帆走/漕走兼用ボード |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017179254A1 (ja) | 2017-10-19 |
| CN108886005A (zh) | 2018-11-23 |
| CN108886005B (zh) | 2023-06-06 |
| US10935510B2 (en) | 2021-03-02 |
| KR102170149B1 (ko) | 2020-10-26 |
| JP6528710B2 (ja) | 2019-06-12 |
| KR20180126530A (ko) | 2018-11-27 |
| TWI650823B (zh) | 2019-02-11 |
| JP2017191800A (ja) | 2017-10-19 |
| TW201802977A (zh) | 2018-01-16 |
| US20190064098A1 (en) | 2019-02-28 |
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