WO2017179254A1 - シリコン試料の炭素濃度測定方法、シリコン単結晶インゴットの製造方法、シリコン単結晶インゴットおよびシリコンウェーハ - Google Patents

シリコン試料の炭素濃度測定方法、シリコン単結晶インゴットの製造方法、シリコン単結晶インゴットおよびシリコンウェーハ Download PDF

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WO2017179254A1
WO2017179254A1 PCT/JP2017/001443 JP2017001443W WO2017179254A1 WO 2017179254 A1 WO2017179254 A1 WO 2017179254A1 JP 2017001443 W JP2017001443 W JP 2017001443W WO 2017179254 A1 WO2017179254 A1 WO 2017179254A1
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Prior art keywords
silicon
carbon concentration
single crystal
silicon sample
crystal ingot
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French (fr)
Japanese (ja)
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和隆 江里口
佐俣　秀一
三次　伯知
亜由美 柾田
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Sumco Corp
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Sumco Corp
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Priority to US16/092,364 priority Critical patent/US10935510B2/en
Priority to KR1020187029989A priority patent/KR102170149B1/ko
Priority to DE112017001965.6T priority patent/DE112017001965T5/de
Priority to CN201780020471.0A priority patent/CN108886005B/zh
Publication of WO2017179254A1 publication Critical patent/WO2017179254A1/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/24—Investigating the presence of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N31/00—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods
    • G01N31/12—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using combustion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement

Definitions

  • the present invention relates to a method for measuring the carbon concentration of a silicon sample, a method for producing a silicon single crystal ingot, a silicon single crystal ingot, and a silicon wafer.
  • a silicon wafer used as a semiconductor substrate is always required to reduce impurity contamination that causes deterioration of device characteristics.
  • attention has been paid to carbon as an impurity contained in a silicon wafer and it has been studied to reduce carbon contamination of the silicon wafer.
  • the carbon concentration of a silicon sample is measured, and based on the measurement result, the production conditions of a silicon single crystal ingot for cutting a silicon wafer can be managed so as to reduce the carbon mixed in the production process. desirable.
  • the lower limit of detection of FT-IR is generally on the order of 10 15 atoms / cm.
  • the method using FT-IR is effective when the carbon concentration in the silicon sample is relatively high, the carbon concentration of the silicon sample with a low carbon contamination level, specifically, 1E + 16atoms / cm less than 3, namely 10 15 atoms / cm 3 units or lower concentration than the concentration of carbon in the measurement with high accuracy, sensitivity is insufficient. Further, it is difficult to measure a carbon concentration of 1E + 15 atoms / cm 3 or less by the FT-IR method. However, in recent years, since a silicon wafer with a further reduced carbon concentration and less carbon contamination has been demanded, it is desirable that a trace amount of carbon in a silicon sample can be quantified with sensitivity exceeding the FT-IR method.
  • SIMS enables more sensitive analysis than FT-IR. Therefore, according to the method using SIMS (SIMS method), a lower carbon concentration can be measured as compared with the FT-IR method. It is desirable for the determination of trace carbon that carbon can be quantified at least with high sensitivity equivalent to or exceeding that of the SIMS method.
  • the method using luminescence or cathodoluminescence described in the above publication can be analyzed with higher sensitivity than the SIMS method.
  • electron beam irradiation treatment is indispensable for measuring the carbon concentration. This is because the carbon concentration can be obtained by measuring the concentration of Ci—Cs generated by activating substitutional carbon (Cs) to interstitial carbon (Ci) by electron beam irradiation treatment.
  • the carbon concentration can be obtained by measuring the concentration of Ci—Cs generated by activating substitutional carbon (Cs) to interstitial carbon (Ci) by electron beam irradiation treatment.
  • oxygen is present in the silicon sample, a part of the generated interstitial carbon (Ci) is paired (Ci-Oi) with the interstitial oxygen (Oi). Depends on the oxygen concentration.
  • the quantified carbon concentration is affected by the oxygen concentration of the silicon sample.
  • electron beam irradiation requires a long lead time, requires large-scale equipment, increases costs, requires heat treatment for the production and recovery of protective oxide films in addition to the electron beam irradiation process, and increases the number of processes.
  • disturbance is likely to occur due to the above. Therefore, it is desirable that a trace amount of carbon in a silicon sample can be quantified without requiring electron beam irradiation treatment.
  • One embodiment of the present invention provides a new means for quantifying carbon in a silicon sample with sensitivity equal to or exceeding that of the SIMS method without requiring electron beam irradiation treatment.
  • the density of carbon-related levels in the silicon band gap activated by introducing hydrogen atoms into the silicon sample is increased in the silicon sample. It was newly found that there is a correlation with the carbon concentration.
  • the following method for measuring the carbon concentration of a silicon sample according to one embodiment of the present invention has a sensitivity equivalent to or exceeding that of the SIMS method, and does not require an electron beam irradiation treatment. It was newly found that quantification becomes possible.
  • One embodiment of the present invention has been completed based on the above findings.
  • One embodiment of the present invention provides: Introducing hydrogen atoms into the silicon sample to be measured, Subjecting the silicon sample to which the hydrogen atom has been introduced to an evaluation by an evaluation method for evaluating the trap level in the band gap of silicon without performing electron beam irradiation treatment; Among the evaluation results obtained by the above evaluation, in at least one trap level selected from the group consisting of Ec (energy at the bottom of the conduction band) ⁇ 0.10 eV, Ec ⁇ 0.13 eV and Ec ⁇ 0.15 eV Obtaining the carbon concentration of the silicon sample to be measured based on the evaluation result; A carbon concentration measurement method for a silicon sample (hereinafter also simply referred to as “measurement method”), wherein the required carbon concentration is less than 1.0E + 16 atoms / cm 3 .
  • E + represents an index as is well known.
  • 1.0E + 16 means “1.0 ⁇ 10 16 ” as is well known. The same applies to other notations using E +.
  • the required carbon concentration is 1.0E + 15 atoms / cm 3 or less.
  • the oxygen concentration obtained by the FT-IR method of the measurement target silicon sample is 1.0E + 17 atoms / cm 3 or more.
  • the oxygen concentrations described below are values obtained by the FT-IR method unless otherwise specified.
  • the carbon concentration of the measurement target silicon sample is obtained based on the evaluation result at Ec-0.15 eV.
  • introduction of hydrogen atoms into the measurement target silicon sample is performed by immersing the measurement target silicon sample in a solution.
  • the solution is hydrofluoric acid.
  • the carbon concentration of the measurement target silicon sample is determined using a calibration curve based on the evaluation result.
  • the measurement method comprises: Introducing hydrogen atoms into a plurality of calibration curve creating silicon samples whose carbon concentrations measured by evaluation methods other than the above evaluation methods are known; The same trap level as the trap level used to determine the carbon concentration of the measurement target silicon sample by subjecting the silicon samples for preparing calibration curves introduced with the hydrogen atoms to the same evaluation method as the measurement target silicon sample. Creating the calibration curve using the evaluation result at the level and the known carbon concentration, including.
  • the evaluation method is a DLTS method (Deep-Level Transient Spectroscopy).
  • the width Wa of the depletion layer formed on the calibration curve preparation silicon sample in the evaluation of the calibration curve preparation silicon sample by the DLTS method, and the calibration curve preparation silicon sample in the evaluation of the measurement target silicon sample by the DLTS method The width Wb of the depletion layer formed in following formula 2: (Formula 2)
  • a further aspect of the invention provides: Growing a silicon single crystal ingot by the Czochralski method, Measuring the carbon concentration of a silicon sample cut from the silicon single crystal ingot by the measurement method, Determining the production conditions of the silicon single crystal ingot based on the measured carbon concentration of the silicon sample; and Growing a silicon single crystal ingot by the Czochralski method under the determined production conditions; A method for producing a silicon single crystal ingot containing About.
  • “Manufacturing conditions” in the present invention and the present specification include the pulling apparatus to be used, the grade of raw material polysilicon, the growing conditions (pulling speed, gas flow rate, etc.) and the like.
  • the change of the lifting device includes a case where the design of the member is changed or the position of the member is changed in the device even if the lifting device itself is the same.
  • a silicon sample cut from the top of a silicon single crystal ingot grown under the determined manufacturing conditions has a carbon concentration measured by the measurement method of 1.0E + 15 atoms / cm 3 or less.
  • the silicon sample cut from the top has an oxygen concentration determined by the FT-IR method of 1.0E + 17 atoms / cm 3 or more.
  • the silicon single crystal ingot grown under the determined manufacturing conditions has a carbon concentration measured by the above measurement method of a silicon sample cut from the silicon single crystal ingot from the top to the entire bottom. 0.0E + 15 atoms / cm 3 or less.
  • the silicon single crystal ingot grown under the determined manufacturing conditions has an oxygen concentration determined by FT-IR of a silicon sample cut from the silicon single crystal ingot from the top to the bottom of 1. it is 0E + 17atoms / cm 3 or more.
  • a further aspect of the present invention relates to a silicon single crystal ingot obtained by the above production method.
  • a further aspect of the present invention relates to a silicon wafer cut out from the silicon single crystal ingot.
  • carbon contained in a trace amount in a silicon sample can be quantified with high sensitivity equivalent to or exceeding the SIMS method without requiring an electron beam irradiation treatment. Furthermore, since it can be quantified without requiring electron beam irradiation treatment, the trace amount of carbon in the silicon sample can be quantified without depending on the oxygen concentration.
  • the method for measuring the carbon concentration of a silicon sample includes introducing a hydrogen atom into a measurement target silicon sample, and subjecting the measurement target silicon sample into which the hydrogen atom has been introduced to silicon without performing electron beam irradiation treatment.
  • the evaluation results obtained by the evaluation method for evaluating the trap level in the band gap of Ec are composed of Ec-0.10 eV, Ec-0.13 eV, and Ec-0.15 eV. Determining the carbon concentration of the silicon sample to be measured based on the evaluation result in at least one trap level selected from the group.
  • the required carbon concentration is less than 1.0E + 16 atoms / cm 3 .
  • the silicon sample to be measured by the measurement method is, for example, a silicon sample cut out from a silicon single crystal ingot.
  • a part can be further cut out from a sample cut into a wafer form from a silicon single crystal ingot and subjected to measurement.
  • the sample to be measured can also be a silicon sample cut out from various silicon wafers used as a semiconductor substrate (for example, a polished wafer or an epitaxial wafer).
  • the silicon wafer may be a silicon wafer that has been subjected to various processing processes (for example, polishing, etching, cleaning, etc.) that are normally performed on the silicon wafer.
  • the silicon sample may be n-type silicon or p-type silicon.
  • the oxygen concentration of the silicon sample to be measured can be, for example, 1.0E + 17 atoms / cm 3 or more (for example, 1.0E + 17 to 27.5E + 17 atoms / cm 3 ).
  • the oxygen concentration here is a value measured by the FT-IR method.
  • a silicon sample derived from a silicon single crystal grown by the Czochralski method (CZ method) usually contains oxygen.
  • the carbon concentration to be quantified depends on the oxygen concentration. Therefore, the measurement accuracy of the carbon concentration tends to decrease as the silicon sample has a higher oxygen concentration.
  • the carbon concentration of a silicon sample having a relatively high oxygen concentration for example, a silicon sample having an oxygen concentration in the above range can be measured with high accuracy.
  • the introduction of hydrogen atoms may be performed by a dry process (dry process) or by a wet process (wet process, that is, use of a solution).
  • introduction of hydrogen atoms by dry treatment can be performed by an ion implantation method, hydrogen plasma, or the like. Note that the introduction of hydrogen atoms in the present invention and the present specification includes an embodiment in which hydrogen atoms are introduced in an ion or plasma state.
  • the introduction of hydrogen atoms by wet treatment can be performed by bringing a silicon sample into contact with the solution (for example, by immersion).
  • the solution used here may be an acid solution or a base solution as long as it is a solution containing hydrogen atoms in either an ionized state (ion) or a salt state.
  • the acid solution include hydrofluoric acid, a mixed solution of hydrofluoric acid and nitric acid (hydrofluoric nitric acid), a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of hydrochloric acid and hydrogen peroxide, and the like.
  • the base solution examples include a sodium hydroxide solution, a potassium hydroxide solution, a mixed solution of ammonia water and hydrogen peroxide, and the like.
  • the various solutions are preferably aqueous solutions (solutions containing water), and more preferably aqueous solutions.
  • the acid concentration of the acid solution and the base concentration of the base solution are not particularly limited.
  • introduction of hydrogen atoms with hydrofluoric acid can be performed by immersing a silicon sample to be measured in 1 to 25 mass% hydrofluoric acid for 1 to 10 minutes. After immersion, the sample to be measured may be subjected to post-treatment such as washing and drying as necessary.
  • trap levels of Ec-0.10 eV, Ec-0.13 eV, or Ec-0.15 eV are used as carbon-related levels.
  • the carbon concentration is measured based on the density of the trap levels without performing electron beam irradiation treatment. It becomes possible.
  • the trap level density can be measured by various evaluation methods capable of evaluating the trap level in the band gap of silicon. Examples of such evaluation methods include DLTS method, lifetime method, ICTS method (Isothermal-Capacitance-Transient-Spectroscopy), low-temperature photoluminescence (PL) method, cathodoluminescence (CL) method and the like.
  • the electron beam irradiation treatment was indispensable.
  • the one or more trap levels are activated by the introduction of hydrogen atoms, so that the carbon concentration is based on the density of the trap levels without performing electron beam irradiation treatment. Can be measured.
  • a publicly known technique can be applied without any limitation to the measurement methods by various evaluation methods.
  • the trap density detection limit of the DLTS method is generally about 10 ⁇ 4 to 10 ⁇ 5 of the carrier concentration, so that it is possible to realize the determination of carbon of 10 13 atoms / cm 3 or less. is there.
  • the DLTS method is a preferable evaluation method from the viewpoint of enabling more sensitive carbon quantification.
  • Ec-0.10 eV, Ec-0.13 eV or Ec-0.V is obtained by fitting the DLTS spectrum obtained as the sum of each peak obtained by the DLTS method by a known method.
  • the DLTS spectrum of the 15 eV trap level can be separated.
  • the trap level density of Ec-0.10 eV is a peak near 76K
  • the trap level density of Ec-0.13 eV is a peak near 87K
  • the trap level of Ec-0.15 eV can be measured based on the peak intensity (DLTS signal intensity) of the peak near 101K.
  • the peak used for the carbon concentration measurement is at least one of the above three peaks, and two or three peaks may be used. Usually, it can be determined that the higher the peak intensity, the higher the carbon concentration.
  • the carbon concentration of the silicon sample is measured based on the evaluation result at Ec-0.13 eV and / or Ec-0.15 eV. For example, it can be determined that the higher the peak intensity (DLTS signal intensity) of the DLTS spectrum at the trap level of Ec ⁇ 0.15 eV separated by the fitting process, the higher the carbon concentration.
  • the calibration curve shows the correlation between the evaluation result obtained by the evaluation method (for example, the trap level density obtained from the above-described peak intensity (DLTS signal intensity) obtained by the DLTS method) and the carbon concentration.
  • the relational expression for obtaining the trap level density from the DLTS signal intensity is known. More preferably, hydrogen atoms are introduced into a plurality of calibration curve creation silicon samples with known carbon concentrations, and the plurality of calibration curve creation silicon samples into which the hydrogen atoms are introduced are evaluated by the same evaluation method as the measurement target silicon sample.
  • a calibration curve is created using the evaluation results at the same trap level as the trap level used to determine the carbon concentration of the silicon sample to be measured and the known carbon concentration of the calibration sample silicon sample. be able to.
  • the known carbon concentration of the silicon sample for preparing a calibration curve is measured by an evaluation method other than the evaluation method used for evaluating the measurement target silicon sample. Examples of the evaluation method include known evaluation methods such as the SIMS method, the FI-IR method, and the luminescence method, and the SIMS method is preferable.
  • the calibration sample creation silicon sample various silicon samples as exemplified above for the measurement target silicon sample can be used.
  • the calibration sample creation silicon sample is a silicon sample cut from the same silicon sample as the measurement target silicon sample, or the same manufacturing process as the measurement target silicon sample. It is preferable that it is a passed silicon sample.
  • a reverse voltage for forming a depletion layer at a semiconductor junction (Schottky junction or pn junction) formed on a silicon sample to be evaluated and a weak voltage near 0 V for trapping carriers in the depletion layer. are alternately and periodically applied.
  • the width (measurement depth) of the depletion layer formed varies depending on the magnitude of the reverse voltage applied here. If the width of the depletion layer is W, W can be calculated by the following equation. Wherein, N D, in order to show a dopant concentration, W is inversely proportional to the dopant concentration.
  • the width W of the depletion layer to be formed is changed.
  • the width Wa of the depletion layer formed on the calibration sample preparing silicon sample and the width Wb of the depletion layer formed on the measurement target sample are approximately the same.
  • the absolute value of the difference between Wa and Wb is preferably 2.0 ⁇ m or less. That is, it is preferable that Wa and Wb satisfy the following formula 2. (Formula 2)
  • the reverse voltage to be applied may be set based on the dopant concentration of each sample and W calculated by the following formula.
  • the carbon concentration of the measurement target silicon sample can be obtained from the evaluation result obtained by the above evaluation method for the measurement target silicon sample.
  • the carbon concentration measured by the above measurement method is less than 1.0E + 16 atoms / cm 3 .
  • the carbon concentration of a silicon sample containing carbon can be measured in an amount in a concentration range that is difficult to measure with high accuracy by such an FT-IR method.
  • the carbon concentration of the silicon sample to be measured can be, for example, in the range of 1.0E + 14 atoms / cm 3 to 1.0E + 15 atoms / cm 3 as a value measured by the above measuring method, or 1.0E + 13 atoms / cm 3. It can also be in the range of ⁇ 1.0E + 15 atoms / cm 3 .
  • One embodiment of the present invention provides: Growing a silicon single crystal ingot by the Czochralski method, Measuring the carbon concentration of a silicon sample cut out from the silicon single crystal ingot by the measurement method according to one embodiment of the present invention, Determining the production conditions of the silicon single crystal ingot based on the measured carbon concentration of the silicon sample; and Growing a silicon single crystal ingot by the Czochralski method under the determined production conditions; A method for producing a silicon single crystal ingot containing About.
  • a known technique related to the CZ method can be applied to the growth of a silicon single crystal ingot by the Czochralski method (CZ method).
  • CZ method Czochralski method
  • carbon may be mixed due to carbon mixed in the raw material polysilicon, CO gas generated during the growth, or the like. It is preferable to measure such a mixed carbon concentration with high accuracy and to determine a manufacturing condition based on the measurement result in order to manufacture a silicon single crystal ingot in which carbon mixing is suppressed. Therefore, the measurement method according to one embodiment of the present invention is suitable as a method for measuring the concentration of mixed carbon.
  • the carbon concentration usually tends to increase toward the bottom portion (segregation). Therefore, even if the silicon sample cut out from the bottom contains carbon at a concentration that enables high-precision measurement by the FT-IR method, the silicon sample cut out from the top has a lower carbon concentration than the bottom, so that the FT-IR In some cases, high-precision measurement is difficult with the method, or measurement itself may be difficult.
  • the top carbon concentration at a lower carbon concentration is measured with high accuracy, and the silicon concentration is measured based on the measured carbon concentration. It is preferable to determine the production conditions of the single crystal ingot so as to reduce the carbon concentration.
  • the top portion refers to the region from the seed portion of the single crystal to the straight barrel portion, and the bottom portion refers to the region from the straight barrel portion of the silicon single crystal ingot to the reduction of the crystal diameter to a conical shape.
  • the measurement method according to one embodiment of the present invention described above was cut out from the top because the carbon concentration in a concentration range that is difficult to measure with high accuracy by the FT-IR method can be measured with high accuracy.
  • This method is suitable as a method for quantifying trace carbon in a silicon sample.
  • Carbon concentration of the silicon sample cut out from the top, as a carbon concentration measured by the measuring method, 1.0E + 16atoms / cm can be less than 3, preferably not more than 1.0E + 15atoms / cm 3.
  • the carbon concentration of the silicon sample cut out from the top as a carbon concentration measured by the above measuring method, it is possible for example in the range of 1.0E + 14atoms / cm 3 ⁇ 1.0E + 15atoms / cm 3, 1.0E + 13atoms It can also be in the range of / cm 3 to 1.0E + 15 atoms / cm 3 .
  • the silicon single crystal ingot grown by the CZ method usually contains oxygen.
  • the measured carbon concentration is affected by the oxygen concentration of the silicon sample.
  • the measuring method according to one embodiment of the present invention can measure the carbon concentration without performing the electron beam irradiation treatment, the carbon concentration can be measured without depending on the oxygen concentration. . Therefore, according to the measurement method, the carbon concentration of a silicon sample having a relatively high oxygen concentration, for example, a silicon sample having an oxygen concentration of 1.0E + 17 atoms / cm 3 or more (for example, 1.0E + 17 to 27.5E + 17 atoms / cm 3 ) It can be measured with high accuracy.
  • the oxygen concentration of a silicon sample cut out from a silicon single crystal ingot grown by the CZ method and subjected to measurement, for example, a silicon sample cut out from the bottom is within the above range, The carbon concentration can be measured with high accuracy.
  • the silicon sample cut from the silicon single crystal ingot grown by the CZ method may be cut from any part (bottom, top, or intermediate region between the bottom and top) of the silicon single crystal ingot. Preferably, it is a silicon sample cut from the top where the carbon concentration tends to be lower. Based on the carbon concentration of the silicon sample cut from the top, the silicon single crystal ingot is grown under the manufacturing conditions determined by adopting means for reducing the carbon concentration as necessary, from the top to the bottom. Thus, it becomes possible to produce a silicon single crystal ingot with reduced carbon contamination throughout. As means for reducing carbon contamination, for example, one or more of the following means can be employed. (1) Use high-grade products with less carbon contamination as raw material polysilicon. (2) To suppress the dissolution of CO into the polysilicon melt, appropriately adjust the pulling rate and / or the argon (Ar) gas flow rate during crystal pulling. (3) To change the design of the carbon member included in the lifting device, change the mounting position, etc.
  • the silicon single crystal ingot manufactured under the manufacturing conditions thus determined has a carbon concentration of 1.0E + 15 atoms / cm 3 or less measured from the top to the bottom by the measurement method according to one embodiment of the present invention. And can range from 1.0E + 14 atoms / cm 3 to 1.0E + 15 atoms / cm 3 , or can range from 1.0E + 13 atoms / cm 3 to 1.0E + 15 atoms / cm 3 .
  • the silicon single crystal ingot thus manufactured can have an oxygen concentration of 1.0E + 17 atoms / cm 3 or more (for example, 1.0E + 17 to 27.5E + 17 atoms / cm 3 ) from the top to the bottom.
  • the silicon single crystal ingot obtained by the said manufacturing method is also provided.
  • the carbon concentration measured by the measurement method according to the above aspect of the present invention of a silicon sample cut out from the silicon single crystal ingot is 1.0E + 15 atoms / cm 3 or less from the top to the bottom.
  • the oxygen concentration can be, for example, 1.0E + 17 atoms / cm 3 or more (for example, 1.0E + 17 to 27.5E + 17 atoms / cm 3 ) from the top to the bottom.
  • the carbon concentration measured by the measurement method according to one embodiment of the present invention can be 1.0E + 15 atoms / cm 3 or less, and 1.0E + 14 atoms / cm 3 to 1.0E + 15 atoms / cm 3 . It can also be in the range, or it can be in the range of 1.0E + 13 atoms / cm 3 to 1.0E + 15 atoms / cm 3 . Further, the oxygen concentration can be, for example, 1.0E + 17atoms / cm 3 or more (e.g. 1.0E + 17 ⁇ 27.5E + 17atoms / cm 3).
  • Example 1 Growth of silicon single crystal ingot by CZ method One or more selected from the group consisting of grade of raw polysilicon, pulling equipment, growth conditions and grade of raw polysilicon using the silicon single crystal pulling apparatus having the configuration shown in FIG. By changing the manufacturing conditions, a plurality of silicon single crystal ingots having different carbon concentrations were grown. Details of the silicon single crystal pulling apparatus shown in FIG. 1 will be described below.
  • a silicon single crystal pulling apparatus 10 shown in FIG. 1 includes a chamber 11, a support rotary shaft 12 that passes through the center of the bottom of the chamber 11 and is provided in the vertical direction, and a graphite susceptor fixed to the upper end of the support rotary shaft 12.
  • a quartz crucible 14 accommodated in the graphite susceptor 13 a quartz crucible 14 accommodated in the graphite susceptor 13, a heater 15 provided around the graphite susceptor 13, a support shaft driving mechanism 16 for moving the support rotating shaft 12 up and down, and a seed crystal Heating of the silicon single crystal ingot 20 by radiation heat from the seed chuck 17 to be held, the pulling wire 18 for suspending the seed chuck 17, the wire winding mechanism 19 for winding the wire 18, and the heater 15 and the quartz crucible 14.
  • a gas inlet 24 for introducing Ar gas into the chamber 11 is provided in the upper part of the chamber 11.
  • Ar gas is introduced into the chamber 11 from the gas introduction port 24 through the gas pipe 25, and the introduction amount is controlled by the conductance valve 26.
  • a gas discharge port 27 for exhausting Ar gas in the chamber 11 is provided at the bottom of the chamber 11.
  • Ar gas in the sealed chamber 11 is discharged from the gas outlet 27 through the exhaust pipe 28 to the outside.
  • a conductance valve 29 and a vacuum pump 30 are installed in the middle of the exhaust gas pipe 28, and the pressure inside the chamber 11 is reduced by controlling the flow rate with the conductance valve 29 while sucking Ar gas in the chamber 11 with the vacuum pump 30. The state is maintained.
  • a magnetic field supply device 31 for applying a magnetic field to the silicon melt 21 is provided outside the chamber 11.
  • the magnetic field supplied from the magnetic field supply device 31 may be a horizontal magnetic field or a cusp magnetic field.
  • Each silicon single crystal ingot grown in step 1 was cut, and a wafer shape sample was cut out from the top of the ingot. From the same sample, a silicon sample for DLTS measurement and a silicon sample for SIMS measurement were obtained.
  • the oxygen concentration obtained by the FT-IR method of each silicon sample was in the range of 2.0E + 17 to 12.0E17 atoms / cm 3 .
  • the silicon single crystal ingot was n-type silicon (resistance value: 10 to 100 ⁇ ⁇ cm).
  • a reverse voltage for forming a depletion layer and a pulse voltage for trapping carriers in the depletion layer were alternately and periodically applied to the Schottky junction of the silicon sample subjected to the above processes (A) to (C).
  • the transient response of the capacitance (capacitance) generated in response to the voltage was measured.
  • the above voltage application and capacity measurement were performed while sweeping the sample temperature in a predetermined temperature range.
  • DLTS signal intensity ⁇ C was plotted against temperature to obtain a DLTS spectrum.
  • the measurement frequency was 250 Hz. In the measurement, the electron beam irradiation treatment to the DLTS measurement silicon sample is not performed.
  • the obtained DLTS spectrum was subjected to fitting processing (Ture shape fitting processing) using a program manufactured by SEMILAB, and the trap level of Ec-0.10 eV (peak position: temperature 76 K) and the trap level of Ec-0.13 eV (Peak position: temperature 87K) and DLTS spectrum of trap level (peak position: temperature 101K) of Ec-0.15 eV.
  • the DLTS spectrum of the trap level of Ec-0.10 eV is represented by E1 Fit.
  • Ec-0.13 eV trap level DLTS spectrum was measured using E2 Fit.
  • Ec-0.15 eV trap level DLTS spectrum of E3 Fit Call it.
  • FIG. 2 shows the DLTS spectrum before the fitting process, and the E1 Fit. , E2 Fit. , And E3 Fit.
  • Each DLTS spectrum is shown.
  • the unit of the vertical axis is an arbitrary unit (au).
  • the trap level density calculated from the DLTS signal intensity at the peak position (temperature 87K) in the DLTS spectrum of the sample was taken on the vertical axis, and the carbon concentration obtained by SIMS measurement was taken on the horizontal axis.
  • the calibration curve shown in FIG. The trap level density obtained from the DLTS signal intensity at the peak position (temperature 101K) in the DLTS spectrum was taken on the vertical axis, and the carbon concentration obtained by SIMS measurement was taken on the horizontal axis.
  • the trap level density Nt of Ec-0.10 eV is obtained from the DLTS signal intensity at the peak position (temperature 76 K) in the DLTS spectrum.
  • the trap level density Nt of Ec ⁇ 0.13 eV is obtained from the DLTS signal intensity at the peak position (temperature 87 K) in the DLTS spectrum.
  • the trap level density Nt of Ec ⁇ 0.15 eV is obtained from the DLTS signal intensity at the peak position (temperature 101 K) in the DLTS spectrum. As shown in FIGS. 3 to 5, since all three calibration curves showed a positive slope, there was a positive between the trap level density and the carbon concentration of each trap level obtained from the DLTS signal intensity.
  • Example 2 Similarly to Example 1, DLTS measurement and SIMS measurement were performed using silicon samples cut from silicon single crystal ingots having different carbon concentrations.
  • E3Fit.3 was used using the DLTS spectrum obtained by fixing the reverse voltage at ⁇ 2V.
  • FIG. 6 shows a calibration curve prepared by taking the trap level density Nt obtained from the DLTS signal intensity at the peak position (temperature 101K) in the DLTS spectrum of the vertical axis on the vertical axis and the carbon concentration obtained by SIMS measurement on the horizontal axis. Shown in On the other hand, the calibration curve shown in FIG.
  • E3Fit. 2 is a calibration curve created by taking the trap level density Nt obtained from the DLTS signal intensity at the peak position (temperature 101K) in the DLTS spectrum of the vertical axis and taking the carbon concentration obtained by SIMS measurement on the horizontal axis.
  • the reverse voltage applied to each silicon sample is calculated using Equation 1 shown above so that the width W of the depletion layer is in the range of 3.0 to 4.5 ⁇ m according to the dopant concentration of each silicon sample. It was set as the reverse voltage made.
  • the calibration curve shown in FIG. 6 is compared with the calibration curve shown in FIG. 7, the square of the correlation coefficient of the calibration curve shown in FIG. 7 is closer to 1, so the width of the depletion layer is about the same.
  • the reverse voltage is set so that the width of the depletion layer is the same as the width of the depletion layer in the DLTS measurement for preparing the calibration curve in the DLTS measurement of the silicon sample to be measured. It is preferable to determine.
  • the trace carbon concentration is determined using the DLTS spectrum measured without electron beam irradiation treatment after introducing hydrogen atoms into the silicon sample to be measured. It can be measured with high accuracy.
  • Example 3 Among the silicon single crystal ingot evaluated in Example 2, the production conditions of a silicon single crystal ingot carbon concentration obtained from the calibration curve was 1.0E + 15atoms / cm 3 than that shown in FIG. 7, the carbon mixing amount By changing the grade of the raw polysilicon so as to reduce it, a silicon single crystal ingot was grown under the changed manufacturing conditions. A silicon sample was cut out from the top and bottom of the grown ingot and an intermediate region between the top and the bottom, and DLTS measurement was performed in the same manner as in Example 1. In the measurement, the reverse voltage was changed according to the dopant concentration of the silicon sample using Equation 1 so that the width of the depletion layer was in the range of 3.0 to 4.5 ⁇ m. E3Fit.
  • the DLTS method is used as an evaluation method for evaluating the trap level in the silicon band gap.
  • hydrogen atoms can be obtained.
  • Based on the evaluation result at least one trap level selected from the group consisting of Ec-0.10 eV, Ec-0.13 eV and Ec-0.15 eV obtained for the silicon sample after introducing The carbon concentration can be measured without performing it.
  • One embodiment of the present invention is useful in the technical field of silicon single crystal ingots and silicon wafers.

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